公开(公告)号：JP2002050732A

公开(公告)日：2002-02-15

申请号：JP2001113229

申请日：2001-04-11

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： WHITNEY DAVID L ,  SOUZA ANTHONY V

IPC: H05K9/00 ,  H01L23/58 ,  H01L31/12 ,  H01L31/167

Abstract: PROBLEM TO BE SOLVED: To avoid erroneous instructions due to currents induced by a transient electric field in a semiconductor device. SOLUTION: In a shield for a semiconductor, one or a plurality of conductive constituent members are disposed on a part of the surface of a semiconductor.

公开(公告)号：JP2002016241A

公开(公告)日：2002-01-18

申请号：JP2001126300

申请日：2001-04-24

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： BLANCHARD RICHARD A ,  WHITNEY DAVID L

IPC: H01L27/14 ,  H01L27/04 ,  H01L27/144 ,  H01L29/78 ,  H01L31/10 ,  H01L31/12

Abstract: PROBLEM TO BE SOLVED: To provide an advantageous method of reducing an on-state resistance of a transistor in a semiconductor device 36, including the transistor 38 formed on semiconductor substrates 12, 14, the transistor comprising a first terminal region 16 and a second terminal region 18, the terminal regions forming a current channel 44, when the transistor is conducting. SOLUTION: The semiconductor device 36 comprises a minority carrier injector 40 positioned near the second terminal region, with the minority carrier injector supplying the minority carrier into the transistor, when the transistor is in a prescribed voltage state; and a photoelectric device 42 which generates injection voltage in the minority carrier injector in response to incident light, the injection voltage which drives the transistor into the prescribed voltage state and, thereby causing the injector to supply the minority carrier into the vicinity of the second terminal region.