公开(公告)号：WO02058147A3

公开(公告)日：2003-03-27

申请号：PCT/US0148803

申请日：2001-12-17

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： IYER SUNDAR ,  KOTHANDARAMAN C RAMAN ,  STETTER MICHAEL

IPC: H01L23/525

CPC classification number: H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An improved fuse structure in an integrated circuit IC structure is made by forming a gate stack comprised of layers of polysilicon and a silicide. Subsequent to the formation of the silicide layer 12, an etch stop silicon nitride layer 15 is deposited over the silicide layer. The silicon nitride layer is patterned to expose the silicide layer. A soft passivation layer 18 is deposited over the exposed silicide layer. The soft passivation layer has a low thermal conductivity which confines energy in the silicide layer, minimizing the current needed to program the fuse. The inherent ductility of the soft passivation layer prevents the generation of cracks in the surrounding layers.

Abstract translation: 通过形成由多晶硅层和硅化物层构成的栅极堆叠来形成集成电路IC结构中的改进的熔丝结构。 在形成硅化物层12之后，在硅化物层上沉积蚀刻停止氮化硅层15。 图案化氮化硅层以暴露硅化物层。 软化钝化层18沉积在暴露的硅化物层上。 软钝化层具有低热导率，其将能量限制在硅化物层中，使得对熔丝编程所需的电流最小化。 软钝化层的固有延展性防止周围层产生裂纹。