公开(公告)号：WO0223598A3

公开(公告)日：2002-06-13

申请号：PCT/US0142148

申请日：2001-09-14

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： LU ZHIJIAN ,  MOREAU WAYNE ,  CHEN KUANG JUNG ,  MACK GEORGE

IPC: C11D1/14 ,  C11D11/00 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40

CPC classification number: C11D11/0047 ,  C11D1/146 ,  G03F7/3021 ,  G03F7/32 ,  G03F7/322 ,  G03F7/40

Abstract: Post-development defects in the manufacture of semiconductor devices through the use of surfactants, suchas ammonium lauryl sulfate, incorporated in the rinse water or the developer for the resist. The surfactants effectively remove resist defects in or around the resist pattern without attacking the resist itself.

Abstract translation: 通过使用表面活性剂制造半导体器件的后期缺陷，例如掺入漂洗水中的月桂基硫酸铵或用于抗蚀剂的显影剂。 表面活性剂有效去除抗蚀剂图案内或周围的抗蚀剂缺陷，而不会侵蚀抗蚀剂本身。