Abstract:
PROBLEM TO BE SOLVED: To increase data speed or band width by arranging a pre-fetch circuit so that data speed among each hierarchy stage is all equalized substantially and controlling a latch so that the respective data speed at each hierarchy stage is all maintained. SOLUTION: Stages A-C have different data speed/signal time (data speed/bit) a, b, c respectively. Data speed at each stage is determined by data speed/signal path (selected by the number of signal path that is the number of pre-fetch). Pre-fetch is constituted between stages A-B of m>=int(a/b), pre-fetch is constituted between stages B-C of n>=int(b/c), and integers m, n are adjusted as desired. In order to vary pre-fetch depth at each stage, a pointer is designed so as to correspond to pre-fetch depth. A pointer signal is supplied by using a control circuit 214, the control circuit 214 latches continuously data made to synchronize with the latch included in a pre-fetch circuit, and timing is performed optimally.
Abstract:
PROBLEM TO BE SOLVED: To provide a synchronous data fetch circuit that synchronously captures data at a frequency substantially higher than a frequency of each data line and can use a step-down voltage signal. SOLUTION: The synchronous data fetch circuit 200 is provided with a timer generator 206 provided with a 1st timer generator output side, a 1st data driver circuit 210 consisting of a plurality of data drivers that receives a plurality of 1st data signals and a plurality of timing signals, and a 1st data clock circuit 214 that receives a data stream with a 1st high frequency and a 1st high frequency timing pulse stream. Thus, fetch of data in the 1st high frequency data stream is synchronized by using the 1st high frequency timing pulse stream and a synchronized data capture signal is outputted.
Abstract:
PROBLEM TO BE SOLVED: To reduce power consumption and/or to improve performance by receiving the data signal and the timing signal of full swing as inputs, converting them into voltage levels that are stepped down and synchronizing the data/ timing signals with voltage level signals that are stepped down. SOLUTION: This data synchronization take-in circuit 200 can receive/output a full swing signal and synchronizes data take-in by generating and using a step-down signal. A timing driver circuit 202 receives a full swing timing signal by an input node 208. The timing driver circuit 202 not only adds delay required for taking in appropriate data in a reception circuit to the full swing timing signal but also shifts the voltage level of the timing signal and outputs the timing signal which is stepped down. The voltage level of the timing signal which is stepped down is stepped down and the stepped down level is lower than the voltage level of the full swing signal.
Abstract:
PROBLEM TO BE SOLVED: To provide an improved driver circuit which can increase a charge rate to attain an operation faster than an IC by increasing the current of the driver output and operating the driver circuit in an increased overdrive mode. SOLUTION: An overdrive sub-circuit 240 includes an overdrive output 248 which is connected to a driver input 273. The offset set to an active control output signal is supplied to the circuit 240 and the circuit 240 generates an active overdrive output signal to increase the level of overdrive voltage. The overdrive voltage represents the difference between the gate-source voltage and the threshold voltage of a driver transistor. The increased overdrive voltage results in the operation of the driver transistor in an increased overdrive mode, thus improving the performance of the driver transistor.
Abstract:
PROBLEM TO BE SOLVED: To provide a driver circuit in which a charge rate is increased to operate a semiconductor device with a high clock cycle. SOLUTION: A memory chip has plural first sense amplifier 14. The plural first sense amplifiers 14 are multiplexed by MUX16 and connected to a second sense amplifier 24 through global data bus MDQ and bMDQ. The first sense amplifiers detect electric charges from a memory array cell of a memory array, the second sense amplifier 24 translates this charges to a higher level (DOUT), and this high level is expelled by an off-chip driver from a chip. A changing circuit 22 is connected to the global data bus MDQ and bMDQ, and comprises a driver circuit which can charge the global data bus with an increased rate.
Abstract:
There is provided a semiconductor memory device that includes: a plurality of memory cells arranged in at least two groups (102); at least one sense amplifier (SA); a first and a second multiplexer (MUXs); and at least one programmable control device (control circuit). Each multiplexer is adapted to couple at least one of the groups to the amplifier. The programmable control device is adapted to control the first and said second multiplexers. In one embodiment, the programmable control device is adapted to control the multiplexers independently.
Abstract:
A prefetch input write driver for a random access memory (RAM) and a RAM including the prefetch input write driver. The prefetch input write driver is especially for a synchronous dynamic RAM (SDRAM). The prefetch input write driver includes a data input stage receiving data, an enable stage receiving a corresponding data enable, and a write driver providing received data to a memory array in response to a write signal and the corresponding enable stage state. The data stage and the enable stage may each include two or more series connected three state drivers and a latch at the output of each three state driver. As data passes through the data stage a corresponding enable state is passed through the enable stage. Data is passed to the RAM array if the enable state indicates that data in the data stage is to be written into the array.
Abstract:
A bitline architecture having bitlines with electrically controllable bitline lengths is described. The bitlines are provided with a switch which selectively couples or decouples local bitline segments of a bitline, depending on the need to execute the memory access. Bitlines with controllable bitline lengths can result in a reduction in power consumption without additional sense amplifiers or an additional metal layer.
Abstract:
A bidirectional full swing voltage repeater implemented on a signal line of an integrated circuit, which includes a first enable node for providing a first enable signal and a second enable node for providing a second enable signal. There is included a first full-swing unidirectional repeater circuit coupled between a first portion of the signal line and a second portion of the signal line. The first full-swing unidirectional repeater is configured to pass a first full swing signal from the first portion of the signal line to the second portion of the signal line when the first enable signal is enabled. The second full-swing unidirectional repeater circuit is coupled between the first portion of the signal line and the second portion of the signal line. The second full-swing unidirectional repeater circuit is configured to pass a second full swing signal from the second portion of the signal line to the first portion of the signal line when the second enable signal is enabled, wherein the first full-swing unidirectional repeater circuit and the second full-swing unidirectional repeater circuit are tri-stated when both the first enable signal and the second enable signal are disabled.
Abstract:
A method in an integrated circuit for implementing a reduced voltage repeater circuit on a signal line having thereon reduced voltage signals. The reduced voltage signals has a voltage level that is below VDD. The reduced voltage repeater circuit is configured to be coupled to the signal line and having an input node coupled to a first portion of the signal line for receiving a first reduced voltage signal and an output node coupled to a second portion of the signal line for outputting a second reduced voltage signal. The method includes coupling the input node to the first portion of the signal line. The input node is coupled to an input stage of the reduced voltage repeater circuit. The input stage is configured to receive the first reduced voltage signal on the signal line. The input stage is also coupled to a level shifter stage that is arranged to output a set of level shifter stage control signals responsive to the first reduced voltage signal. A voltage range of the set of level shifter stage control signals is higher than a voltage range associated with the first reduced voltage signal. There is further included coupling the output node to the second portion of the signal line. The output node also is coupled to an output stage of the reduced voltage repeater circuit. The output stage is configured to output the second reduced voltage signal on the output node responsive to the set of level shifter stage control signals. A voltage range of the second reduced voltage signal is lower than the voltage range of the set of level shifter stage control signals.