公开(公告)号：DE10224935A1

公开(公告)日：2002-12-19

申请号：DE10224935

申请日：2002-06-04

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： MATHAD GANGADHARA S ,  PANDA SIDDHARTHA ,  RANADE RAJLV M

IPC: B44C1/22 ,  C03C25/68 ,  C23F1/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/762

Abstract: A method of etching a deep, high aspect ratio opening in a silicon substrate includes etching the substrate with a first plasma formed using a first gaseous mixture including a bromine containing gas, an oxygen containing gas and a first fluorine containing gas. The etching process with the first gaseous mixture produces a sidewall passivating deposit, which builds up near the opening entrance. To reduce this buildup, and to increase the average etching rate, the sidewall passivating deposit is periodically thinned by forming a second plasma using a mixture containing silane and a second fluorine containing gas. The substrate remains in the same plasma reactor chamber during the entire process and the plasma is continuously maintained during the thinning step. Holes of a depth greater than 40 times the width may be produced using repeated cycles of etching and thinning.

公开(公告)号：JP2002367960A

公开(公告)日：2002-12-20

申请号：JP2002161955

申请日：2002-06-03

Applicant: Internatl Business Mach Corp ,  インターナショナル・ビジネス・マシーンズ・コーポレーション

Inventor： MATHAD GANGADHARA S ,  PANDA SIDDHARTHA ,  RANADE RAJLV M

IPC: B44C1/22 ,  C03C25/68 ,  C23F1/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/762

CPC classification number: H01L21/30655 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/76224

Abstract: PROBLEM TO BE SOLVED: To provide a method of etching an opening having a high aspect ratio in a silicon substrate.
SOLUTION: This method comprises a process of etching a substrate with a first plasma formed using a first gas mixture including a bromo-contained gas, an oxygen-contained gas, and a first fluorine-contained gas. In this etching process, a side wall protecting attachment 24 is formed with the attachment accumulated near the entrance of an opening 14. In order to reduce the accumulation and increase the average etch rate, the side wall protecting attachment is made thinner periodically by forming a second plasma using a mixture containing silane and a second fluorine-contained gas. Over the entire process, the substrate is held in the same plasma reaction chamber, and the plasma is continuously retained in the process for making the side wall protecting attachment thinner. A trench having a depth larger than 40 times the width can be formed using a repetition cycle of etching and the process of making the side wall protecting attachment thinner.
COPYRIGHT: (C)2003,JPO

Abstract translation: 要解决的问题：提供一种在硅衬底中蚀刻具有高纵横比的开口的方法。 解决方案：该方法包括使用包含含溴气体，含氧气体和第一含氟气体的第一气体混合物形成的第一等离子体来蚀刻基板的工艺。 在该蚀刻工艺中，形成侧壁保护附件24，其中附件积聚在开口14的入口附近。为了减少累积并增加平均蚀刻速率，侧壁保护附件通过形成 使用含有硅烷和第二含氟气体的混合物的第二等离子体。 在整个过程中，衬底保持在相同的等离子体反应室中，等离子体被连续地保留在使侧壁保护附着物更薄的过程中。 可以使用蚀刻的重复循环形成深度大于宽度的40倍的沟槽，并且使侧壁保护附着物的工艺变薄。