公开(公告)号：WO0199161A2

公开(公告)日：2001-12-27

申请号：PCT/US0119815

申请日：2001-06-21

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： LU ZHIJIAN ,  THOMAS ALAN ,  GUTMANN ALOIS ,  CHEN KUANG JUNG ,  LAWSON MARGARET

IPC: G03F7/30 ,  H01L21/00

CPC classification number: G03F7/3021

Abstract: In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable remnants (denoted as Blob Defects) of various components of photoresist material remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of using a Puddle Development technique to develop the photoresist material, and subsequently exposing the semiconductor wafer to at least one Puddle Rinse cycle which uses water.

Abstract translation: 在可用的深紫外（DUV）敏感光刻胶的曝光和显影中，已经观察到遵循现有技术的标准曝光和显影方法导致残留的光致抗蚀剂材料的各种组分的不希望的残留物（表示为Blob缺陷）的高密度 在半导体基板（主体）上。 曝光和显影光致抗蚀剂材料的方法导致这些Blob缺陷的发生率降低，包括使用水坑开发技术开发光致抗蚀剂材料，随后将半导体晶片暴露于使用水的至少一个水坑冲洗循环。

公开(公告)号：WO0198836A3

公开(公告)日：2002-04-18

申请号：PCT/US0119814

申请日：2001-06-21

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： LU ZHIJIAN ,  THOMAS ALAN ,  GUTMANN ALOIS ,  CHEN KUANG JUNG ,  LAWSON MARGARET

IPC: G03F7/20 ,  H01L21/027 ,  G03F7/09

CPC classification number: H01L21/0274 ,  G03F7/2022 ,  G03F7/2037 ,  G03F7/2039 ,  Y10S430/168

Abstract: In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable pieces of components of the photoresist material, Blob Defects, remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of introducing a low level uniform flood exposure of light in addition to the commonly used exposure to patterned light, followed by standard development. The flood exposure is in the range of 5 to 50 % of the dose-to-clear for a non-patterned exposure.

Abstract translation: 在可用的深紫外（DUV）敏感光刻胶的曝光和显影中，已经观察到遵循现有技术的标准曝光和显影方法导致光致抗蚀剂材料的不希望的部件的高密度，残留在 半导体衬底（主体）。 曝光和显影光致抗蚀剂材料的方法导致这些斑点缺陷的发生率降低，除了通常使用的图案光曝光之外，还引入低等级的均匀泛光曝光，随后进行标准开发。 对于非图案化曝光，洪水暴露在5至50％的剂量清除范围内。

公开(公告)号：DE60142833D1

公开(公告)日：2010-09-30

申请号：DE60142833

申请日：2001-06-21

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： LU ZHIJIAN ,  THOMAS ALAN ,  GUTMANN ALOIS ,  CHEN KUANG JUNG ,  LAWSON MARGARET

IPC: G03F7/30