公开(公告)号：WO0184235A2

公开(公告)日：2001-11-08

申请号：PCT/US0111696

申请日：2001-04-10

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： BUKOFSKY SCOTT J ,  KUNKEL GERHARD ,  WISE RICHARD ,  WONG ALFRED

IPC: G03F1/00 ,  G03F7/20 ,  G03F

CPC classification number: G03F7/70466 ,  G03F7/203

Abstract: A method for exposing a workpiece in a dual exposure step-and-repeat process starts by forming a design for a reticle mask. Deconstruct the design for the reticle mask by removing a set(s) of the features that are juxtaposed to form hollow polygonally-shaped clusters with a gap in the center. Form unexposed resist on the workpiece. Load the workpiece and the reticle mask into the stepper. Expose the workpiece through the reticle mask. Reposition the workpiece by a nanostep. Then expose the workpiece through the reticle mask after the repositioning. Test whether the plural exposure process is finished. If the result of the test is NO the process loops back to repeat some of the above steps. Otherwise the process has been completed. An overlay mark is produced by plural exposures of a single mark. A dead zone is provided surrounding an array region in which printing occurs subsequent to exposure in an original exposure. Alternatively, the workpiece can be fully exposed first by stepping a series of full steps, then going back to the starting position, making a nanostep to reset the starting position and re-exposing from the reset starting position in the same way with full steps from the nanostepped position. The clusters may be in the shape of a hexagon or a diamond.

Abstract translation: 用于在双重曝光步骤和重复过程中曝光工件的方法通过形成掩模版掩模的设计而开始。 通过移除一些并列的特征来形成掩模版掩模的设计，以形成具有中心间隙的中空多边形簇。 在工件上形成未曝光的抗蚀剂。 将工件和掩模版掩模装入步进器。 通过掩模掩模将工件暴露。 用纳秒级重新定位工件。 然后在重新定位后将工件暴露在掩模版掩模之外。 测试多次曝光过程是否完成。 如果测试结果为“否”，则过程循环返回以重复上述步骤。 否则该过程已经完成。 通过单个标记的多次曝光产生重叠标记。 围绕阵列区域提供死区，其中在原始曝光中曝光之后发生印刷。 或者，可以通过步进一系列完整的步骤，然后返回到起始位置，首先完全暴露工件，从而使得纳秒能够以相同的方式从复位起始位置复位起始位置并再次曝光 纳米级位置。 簇可以是六边形或菱形的形状。