公开(公告)号：US20020197774A1

公开(公告)日：2002-12-26

申请号：US10186528

申请日：2002-07-01

Applicant: INSTITUTE OF MICROELECTRONICS

Inventor： Shuming Xu ,  Hanhua Feng ,  Pang-Dow Foo

IPC: H01L021/82

CPC classification number: H01L29/66659 ,  H01L29/0653 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/66636 ,  H01L29/7835 ,  Y10S438/923

Abstract: In the prior art LDMOSFET devices capable of handling high power have been made by locating the source contact on the bottom surface of the device, allowing for good heat sinking, with connection to the source region being made through a sinker. However, this structure has poor high frequency characteristics. Also in the prior art, good high frequency performance has been achieved by introducing a dielectric layer immediately below the source/drain regions (SOI) but this structure has poor power handling capabilities. The present invention achieves both good high frequency behavior as well as good power capability in the same device. Instead of inserting a dielectric layer over the entire cross-section of the device, the dielectric layer is limited to being below the heavily doped section of the drain with a small amount of overlap into the lightly doped section. The structure is described in detail together with a process for manufacturing it.

Abstract translation: 在现有技术中，能够处理高功率的LDMOSFET器件已经通过将源极接触定位在器件的底表面上，通过连接到源极区域通过沉降片而实现良好的散热。 然而，该结构具有差的高频特性。 同样在现有技术中，通过在源极/漏极区域（SOI）之下引入电介质层已经实现了良好的高频性能，但是该结构具有差的功率处理能力。 本发明在同一设备中实现了良好的高频行为以及良好的功率能力。 代替在器件的整个横截面上插入电介质层，电介质层被限制在漏极的重掺杂部分之下，在轻掺杂部分中具有少量的重叠。 详细描述该结构及其制造方法。