公开(公告)号：US20220262812A1

公开(公告)日：2022-08-18

申请号：US17631321

申请日：2019-07-29

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Gang ZHANG ,  Zongliang HUO

IPC: H01L27/11556 ,  H01L27/11524 ,  H01L27/11582 ,  H01L27/1157 ,  H01L23/528 ,  H01L27/11526 ,  H01L27/11573

Abstract: A three-dimensional memory and a method for manufacturing the three-dimensional memory, the three-dimensional memory includes a storage unit and a logic control unit, a front of the storage unit and a front of the logic control unit are attached to each other, and the logic control unit is connected to a control circuit, wherein a second metal line of the storage unit and a first metal line of the storage unit are respectively disposed on upper and lower sides of a channel layer of the storage unit, and the first metal line and the second metal line are electrically connected to the control circuit.

公开(公告)号：US20240421032A1

公开(公告)日：2024-12-19

申请号：US18703924

申请日：2021-11-02

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Gang ZHANG ,  Chunlong LI ,  Zongliang HUO ,  Tianchun YE

IPC: H01L23/373 ,  G11C16/14 ,  G11C16/26 ,  H01L23/34 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: The memory cell includes: an array of channel layers including N channel layers vertically provided on a substrate, a tunneling layer and a memory layer being sequentially provided on an outer side of the channel layers; N thermal conductive cores provided in the N channel layers respectively and penetrating the substrate; and an array of thermocouples including a thermocouple word line layer grown on the substrate and N thermocouple layers on the thermocouple word line layer, the thermocouple layers being connected one-to-one with the thermal conductive cores. A first potential difference is applied between the thermocouple word line layer and the thermocouple layer, and the thermal conductive core connected with the thermocouple layer is heated, so that the channel layer and the memory layer corresponding to the thermal conductive core are maintained at first and second preset temperatures respectively under a thermal insulation effect of the tunneling layer.