公开(公告)号：US10068803B2

公开(公告)日：2018-09-04

申请号：US14722597

申请日：2015-05-27

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Huilong Zhu ,  Jun Luo ,  Chunlong Li ,  Jian Deng ,  Chao Zhao

IPC: H01L21/8234 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/762 ,  H01L21/265 ,  H01L21/306 ,  H01L21/308 ,  H01L21/321 ,  H01L29/10 ,  H01L29/66 ,  H01L21/3213 ,  H01L29/78

CPC classification number: H01L21/823431 ,  H01L21/265 ,  H01L21/30604 ,  H01L21/3083 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/31056 ,  H01L21/31105 ,  H01L21/32115 ,  H01L21/32132 ,  H01L21/76229 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/1083 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/6681 ,  H01L29/7848

Abstract: A planarization process is disclosed. The method includes forming a trench in an area of a material layer which has a relatively high loading condition for sputtering. The method further includes sputtering the material layer to make the material layer flat.

公开(公告)号：US09406549B2

公开(公告)日：2016-08-02

申请号：US14647393

申请日：2012-12-20

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Huilong Zhu ,  Jun Luo ,  Chunlong Li ,  Jian Deng ,  Chao Zhao

IPC: H01L21/321 ,  H01L21/265 ,  H01L21/3105 ,  H01L21/762 ,  H01L29/10 ,  H01L29/66 ,  H01L21/308 ,  H01L21/311 ,  H01L21/8234 ,  H01L21/3213

CPC classification number: H01L21/76229 ,  H01L21/26513 ,  H01L21/308 ,  H01L21/31053 ,  H01L21/31056 ,  H01L21/31105 ,  H01L21/32115 ,  H01L21/32132 ,  H01L21/823481 ,  H01L29/1083 ,  H01L29/66795 ,  H01L29/6681

Abstract: A planarization process, the process including performing first sputtering on a material layer, with an area of the material layer which has a relatively low loading condition for sputtering shielded by a first shielding layer, removing the first shielding layer, and performing second sputtering on the material layer to planarize the material layer.

Abstract translation: 平面化处理，该方法包括在材料层上进行第一溅射，其中材料层的面积具有相对低的负载条件，用于由第一屏蔽层屏蔽的溅射，去除第一屏蔽层，以及在第二溅射 材料层以平坦化材料层。

公开(公告)号：US20150262883A1

公开(公告)日：2015-09-17

申请号：US14722597

申请日：2015-05-27

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Huilong Zhu ,  Jun Luo ,  Chunlong Li ,  Jian Deng ,  Chao Zhao

IPC: H01L21/8234 ,  H01L21/265 ,  H01L21/321 ,  H01L29/66 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3105 ,  H01L29/10

CPC classification number: H01L21/823431 ,  H01L21/265 ,  H01L21/30604 ,  H01L21/3083 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/31056 ,  H01L21/31105 ,  H01L21/32115 ,  H01L21/32132 ,  H01L21/76229 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/1083 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/6681 ,  H01L29/7848

Abstract: A planarization process is disclosed. The method includes forming a trench in an area of a material layer which has a relatively high loading condition for sputtering. The method further includes sputtering the material layer to make the material layer flat.

Abstract translation: 公开了平面化处理。 该方法包括在具有相对高的溅射负载条件的材料层的区域中形成沟槽。 该方法还包括溅射材料层以使材料层平坦。