公开(公告)号：US20230125211A1

公开(公告)日：2023-04-27

申请号：US17942246

申请日：2022-09-12

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Yan CUI ,  Jun LUO ,  Meiyin YANG ,  Jing XU

IPC: G01R15/20 ,  G01R19/25 ,  G06N3/063

Abstract: The present application discloses a spin Hall device, a method for obtaining a Hall voltage, and a max pooling method. The spin Hall device includes a cobalt ferroboron layer. A top view and a bottom view of the spin Hall device are completely the same as a cross-shaped graph that has two axes of symmetry perpendicular to each other and equally divided by each other. The spin Hall device of the present application has non-volatility and analog polymorphic characteristics, can be used for obtaining a Hall voltage and applied to various circuits, is simple in structure and small in size, can save on-chip resources, and can meet computation requirements.

公开(公告)号：US20200212103A1

公开(公告)日：2020-07-02

申请号：US16411431

申请日：2019-05-14

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Meiyin YANG ,  Jun LUO ,  Tengzhi YANG ,  Jing XU

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

Abstract: A spin-orbit torque magnetoresistive random access memory, and a method for manufacturing a spin-orbit torque magnetoresistive random access memory are provided. The spin-orbit torque magnetoresistive random access memory includes a spin-orbit coupling layer and a magnetoresistive tunnel junction located on the spin-orbit coupling layer. The magnetoresistive tunnel junction includes a first magnetic layer, a tunneling layer, and a second magnetic layer that are sequentially stacked from bottom to top, and each of the first magnetic layer and the second magnetic layer has perpendicular anisotropy. In a direction of a current in the spin-orbit coupling layer, defects are generated in a part of the magnetoresistive tunnel junction by an ion implantation process.

公开(公告)号：US20220352460A1

公开(公告)日：2022-11-03

申请号：US17495390

申请日：2021-10-06

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Meiyin YANG ,  Jun LUO ,  Yan CUI ,  Jing XU

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  G11C11/16 ,  G11C11/18

Abstract: The present disclosure provides a storage unit, a data writing method and a data reading method thereof, a memory and an electronic device. The storage unit includes a semiconductor substrate, a first insulating medium layer, a ferroelectric thin film layer, a bottom electrode, a tunnel junction, a first metal interconnection portion, a second metal interconnection portion, a third metal interconnection portion and a fourth metal interconnection portion. The first insulating medium layer is formed on the semiconductor substrate, the ferroelectric thin film layer is disposed on the first insulating medium layer, the bottom electrode is formed on the ferroelectric thin film layer, and the tunnel junction is formed on the bottom electrode. The first metal interconnection portion is connected to a first end of the bottom electrode, and the third metal interconnection portion is connected to a second end of the bottom electrode. The second metal interconnection portion is connected to the ferroelectric thin film layer, and the fourth metal interconnection portion is connected to the tunnel junction. As compared with the prior art, the present disclosure can control a directional flipping of the magnetic moment in the tunnel junction based on the ferroelectric thin film layer provided. Based on the structural design of the storage unit, the present disclosure does not require an external magnetic field, and fully meets the requirement of high integration of the device.

公开(公告)号：US20200212293A1

公开(公告)日：2020-07-02

申请号：US16411517

申请日：2019-05-14

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Meiyin YANG ,  Jun LUO ,  Tengzhi YANG ,  Jing XU

IPC: H01L43/02 ,  H01L43/12 ,  H01F10/32 ,  H01F41/30 ,  G11C11/16

Abstract: A magnetoresistive random access memory and a method for manufacturing the same are provided, with which a stress layer covers a part of the protective layer along a direction of a current in the spin-orbit coupling layer, so that a stress is generated on the part of the magnetic layer locally due to the stress layer, thus a lateral asymmetric structure is formed in a direction perpendicular to the current source. In a case that a current is supplied to the spin-orbit coupling layer, the spin-orbit coupling effect in the magnetic layer is asymmetric due to the stress on the part of the magnetic layer, thereby realizing a deterministic switching of the magnetic moment under the function of the stress.

公开(公告)号：US20200152252A1

公开(公告)日：2020-05-14

申请号：US16452035

申请日：2019-06-25

Applicant: Institute of Microelectronics, Chinese Academy of Sciences

Inventor： Meiyin YANG ,  Jun LUO

IPC: G11C11/16 ,  H01L43/10 ,  H01L43/04 ,  H01L27/22 ,  H01F10/32

Abstract: A spin-orbit torque magnetoresistive random access memory, and a method and an apparatus for writing the same. A magnetoresistive tunnel junction is provided on a spin-orbit coupling layer. In a case that a current is applied to the spin-orbit coupling layer, a spin current is generated in the spin-orbit coupling layer, so that a magnetic moment in the magnetoresistive tunnel junction is oriented into a plane of the spin-orbit coupling layer. At such time, there is a temperature difference between one end of the magnetoresistive tunnel junction and another end of the magnetoresistive tunnel junction. An deterministic switching of the magnetic moment is achieved under the temperature difference, and a switching direction can be controlled based on the direction of the current direction or the direction of the temperature difference. Thereby, the deterministic switching of the magnetic moment is achieved in the SOT-MRAM.