公开(公告)号：US20230125211A1

公开(公告)日：2023-04-27

申请号：US17942246

申请日：2022-09-12

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Yan CUI ,  Jun LUO ,  Meiyin YANG ,  Jing XU

IPC: G01R15/20 ,  G01R19/25 ,  G06N3/063

Abstract: The present application discloses a spin Hall device, a method for obtaining a Hall voltage, and a max pooling method. The spin Hall device includes a cobalt ferroboron layer. A top view and a bottom view of the spin Hall device are completely the same as a cross-shaped graph that has two axes of symmetry perpendicular to each other and equally divided by each other. The spin Hall device of the present application has non-volatility and analog polymorphic characteristics, can be used for obtaining a Hall voltage and applied to various circuits, is simple in structure and small in size, can save on-chip resources, and can meet computation requirements.

公开(公告)号：US20220352460A1

公开(公告)日：2022-11-03

申请号：US17495390

申请日：2021-10-06

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Meiyin YANG ,  Jun LUO ,  Yan CUI ,  Jing XU

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  G11C11/16 ,  G11C11/18

Abstract: The present disclosure provides a storage unit, a data writing method and a data reading method thereof, a memory and an electronic device. The storage unit includes a semiconductor substrate, a first insulating medium layer, a ferroelectric thin film layer, a bottom electrode, a tunnel junction, a first metal interconnection portion, a second metal interconnection portion, a third metal interconnection portion and a fourth metal interconnection portion. The first insulating medium layer is formed on the semiconductor substrate, the ferroelectric thin film layer is disposed on the first insulating medium layer, the bottom electrode is formed on the ferroelectric thin film layer, and the tunnel junction is formed on the bottom electrode. The first metal interconnection portion is connected to a first end of the bottom electrode, and the third metal interconnection portion is connected to a second end of the bottom electrode. The second metal interconnection portion is connected to the ferroelectric thin film layer, and the fourth metal interconnection portion is connected to the tunnel junction. As compared with the prior art, the present disclosure can control a directional flipping of the magnetic moment in the tunnel junction based on the ferroelectric thin film layer provided. Based on the structural design of the storage unit, the present disclosure does not require an external magnetic field, and fully meets the requirement of high integration of the device.