公开(公告)号：US20240130251A1

公开(公告)日：2024-04-18

申请号：US18277977

申请日：2022-03-10

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Xiaoxin XU ,  Wenxuan SUN ,  Jie YU ,  Woyu ZHANG ,  Danian DONG ,  Jinru LAI ,  Xu ZHENG ,  Dashan SHANG

IPC: H10N70/20 ,  H10B63/00 ,  H10N70/00

CPC classification number: H10N70/20 ,  H10B63/845 ,  H10N70/011

Abstract: A three-dimensional reservoir based on three-dimensional volatile memristors and a method for manufacturing the same. In the three-dimensional reservoir, a memory layer, a select layer, and an electrode layer in each via form a memristor which is a reservoir unit. The three-dimensional reservoir is formed based on a stacking structure and multiple vias. The three-dimensional reservoir is constructed by using virtual nodes generated from dynamic characteristics of the three-dimensional memristors. An interfacial memristor is first constructed, and its volatility is verified through electric tests. A vertical three-dimensional array is manufactured based on the volatile memristor. A dynamic characteristic of the memristor is adjusted through a Schottky barrier. Different layers in the three-dimensional reservoir correspond to different reservoirs, which are constructed by controlling memristors in the different layers, respectively.