公开(公告)号：US20240260488A1

公开(公告)日：2024-08-01

申请号：US18559755

申请日：2022-03-15

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Xiaoxin XU ,  Wenxuan SUN ,  Jie YU ,  Jinru LAI ,  Xu ZHENG ,  Danian DONG

IPC: H10N70/00 ,  H10N70/20

CPC classification number: H10N70/041 ,  H10N70/023 ,  H10N70/026 ,  H10N70/25 ,  H10N70/8836

Abstract: A method for manufacturing a reservoir computing apparatus, related to artificial intelligence. The method comprises: step a), providing a bottom electrode layer, a dielectric layer, a resistive switching layer, and a top electrode layer based on the above-listed sequence on a substrate to obtain a to-be-annealed reservoir computing apparatus; and step b), annealing the to-be-annealed reservoir computing apparatus to obtain the reservoir computing apparatus, where a temperature of the annealing ranges from 300° C. to 700° C., and duration of the annealing duration ranges from 30s to 100s. The manufactured reservoir computing apparatus is subject to rapid annealing, which redistributes defects, forms a more stable film, and introduces a ferroelectric O-phase into the film. The rapid annealing reduces power consumption and improves computing accuracy effectively.

公开(公告)号：US20240130251A1

公开(公告)日：2024-04-18

申请号：US18277977

申请日：2022-03-10

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Xiaoxin XU ,  Wenxuan SUN ,  Jie YU ,  Woyu ZHANG ,  Danian DONG ,  Jinru LAI ,  Xu ZHENG ,  Dashan SHANG

IPC: H10N70/20 ,  H10B63/00 ,  H10N70/00

CPC classification number: H10N70/20 ,  H10B63/845 ,  H10N70/011

Abstract: A three-dimensional reservoir based on three-dimensional volatile memristors and a method for manufacturing the same. In the three-dimensional reservoir, a memory layer, a select layer, and an electrode layer in each via form a memristor which is a reservoir unit. The three-dimensional reservoir is formed based on a stacking structure and multiple vias. The three-dimensional reservoir is constructed by using virtual nodes generated from dynamic characteristics of the three-dimensional memristors. An interfacial memristor is first constructed, and its volatility is verified through electric tests. A vertical three-dimensional array is manufactured based on the volatile memristor. A dynamic characteristic of the memristor is adjusted through a Schottky barrier. Different layers in the three-dimensional reservoir correspond to different reservoirs, which are constructed by controlling memristors in the different layers, respectively.