公开(公告)号：US20230005937A1

公开(公告)日：2023-01-05

申请号：US17779723

申请日：2019-12-10

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Huaxiang Yin ,  Xiang Lin ,  Yanna Luo ,  Zhanfeng Liu

IPC: H01L27/11

Abstract: The method for manufacturing a three-dimensional static random-access memory, including: manufacturing a first semiconductor structure including multiple MOS transistors and a first insulating layer thereon; bonding a first material layer to the first insulating layer to form a first substrate layer; manufacturing multiple first low-temperature MOS transistors at a low temperature on the first substrate layer, and forming a second insulating layer thereon to form a second semiconductor structure; bonding a second material layer to the second insulating layer to form a second substrate layer; manufacturing multiple second low-temperature MOS transistors at a low temperature on the second substrate layer, and forming a third insulating layer thereon to form a third semiconductor structure; and forming an interconnection layer which interconnets the first semiconductor structure, the second semiconductor structure and the third semiconductor structure.