公开(公告)号：US20230187497A1

公开(公告)日：2023-06-15

申请号：US17925913

申请日：2021-03-18

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Huilong ZHU ,  Xuezheng AI ,  Yongkui ZHANG

IPC: H01L29/06 ,  H01L29/786 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/0673 ,  H01L29/78696 ,  H01L27/0924 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7851

Abstract: A semiconductor apparatus having a staggered structure, a method of manufacturing a semiconductor apparatus, and an electronic device including the semiconductor apparatus. The semiconductor apparatus includes a first element and a second element on a substrate. The first element and the second element each include a comb-shaped structure. The comb-shaped structure includes a first portion extending in a vertical direction relative to the substrate, and at least one second portion extending from the first portion in a lateral direction relative to the substrate and spaced from the substrate. A height of the second portion of the first element in the vertical direction is staggered with respect to a height of the second portion of the second element in the vertical direction. A material of the comb-shaped structure of the first element is different from a material of the comb-shaped structure of the second element.