公开(公告)号：US09590076B1

公开(公告)日：2017-03-07

申请号：US14402303

申请日：2014-08-01

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Jinbiao Liu ,  Yao Wang ,  Guilei Wang ,  Tao Yang ,  Qing Liu ,  Junfeng Li

IPC: H01L21/336 ,  H01L29/66 ,  H01L29/78 ,  H01L21/306 ,  H01L21/311 ,  H01L21/265 ,  H01L29/08

CPC classification number: H01L29/66795 ,  H01L21/265 ,  H01L21/30604 ,  H01L21/31111 ,  H01L29/0847 ,  H01L29/785

Abstract: A method for manufacturing a FinFET device, including providing a substrate; implementing a source/drain doping on the substrate; etching the doped substrate to form a source region and a drain region; forming a fin channel between the source region and the drain region; and forming a gate on the Fin channel. The fin and the gate are formed after the source/drain doping is implemented on the substrate, so that the source/drain doping is done as a doping for a planar device, which ensures the quality of the source/drain coping and improves the property of the FinFET device.

Abstract translation: 一种制造FinFET器件的方法，包括提供衬底; 在衬底上实现源极/漏极掺杂; 蚀刻掺杂衬底以形成源区和漏区; 在源极区域和漏极区域之间形成鳍状沟道; 并在Fin通道上形成一个门。 在源极/漏极掺杂在衬底上实现之后形成鳍和栅极，使得源极/漏极掺杂作为平面器件的掺杂进行，这确保了源/漏极应对的质量并提高了其性能 的FinFET器件。