公开(公告)号：US20240232592A1

公开(公告)日：2024-07-11

申请号：US18263606

申请日：2022-03-03

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Xuefeng ZHAO ,  Guozhong XING ,  Di WANG ,  Ziwei WANG ,  Long LIU ,  Huai LIN ,  Hao ZHANG

IPC: G06N3/063

CPC classification number: G06N3/063

Abstract: Provided are a reconfigurable neuron device based on ion gate regulation and a method of preparing the same. The device includes: a synthetic antiferromagnetic layer, a metal oxide layer, an ionic liquid layer and a top electrode layer which are sequentially stacked from bottom to top. A left boundary antiferromagnetic layer and a right boundary antiferromagnetic layer having opposite magnetization directions are provided on two opposite edges of a bottom end of the synthetic antiferromagnetic layer, and a magnetic tunnel junction configured to output a spike signal is further provided in a middle portion of the bottom end of the synthetic antiferromagnetic layer. The metal oxide layer, the ionic liquid layer and the top electrode layer constitute an ion gate, the ionic liquid layer includes a positive ion and a negative ion.