公开(公告)号：US20240232592A1

公开(公告)日：2024-07-11

申请号：US18263606

申请日：2022-03-03

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Xuefeng ZHAO ,  Guozhong XING ,  Di WANG ,  Ziwei WANG ,  Long LIU ,  Huai LIN ,  Hao ZHANG

IPC: G06N3/063

CPC classification number: G06N3/063

Abstract: Provided are a reconfigurable neuron device based on ion gate regulation and a method of preparing the same. The device includes: a synthetic antiferromagnetic layer, a metal oxide layer, an ionic liquid layer and a top electrode layer which are sequentially stacked from bottom to top. A left boundary antiferromagnetic layer and a right boundary antiferromagnetic layer having opposite magnetization directions are provided on two opposite edges of a bottom end of the synthetic antiferromagnetic layer, and a magnetic tunnel junction configured to output a spike signal is further provided in a middle portion of the bottom end of the synthetic antiferromagnetic layer. The metal oxide layer, the ionic liquid layer and the top electrode layer constitute an ion gate, the ionic liquid layer includes a positive ion and a negative ion.

公开(公告)号：US20240071451A1

公开(公告)日：2024-02-29

申请号：US18261716

申请日：2021-01-21

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Huai LIN ,  Guozhong XING ,  Zuheng WU ,  Long LIU ,  Di WANG ,  Cheng LU ,  Peiwen ZHANG ,  Changqing XIE ,  Ling LI ,  Ming LIU

IPC: G11C11/16

CPC classification number: G11C11/1673 ,  G11C11/1655 ,  G11C11/1657

Abstract: The three-state spintronic device includes: a bottom electrode, a magnetic tunnel junction and a top electrode from bottom to top. The magnetic tunnel junction includes: a spin-orbit coupling layer, a ferromagnetic free layer, a barrier tunneling layer, a ferromagnetic reference layer, three local magnetic domain wall pinning centers and domain wall nucleation centers. An antisymmetric exchange interaction is modulated, and the magnetic domain wall pinning centers are embedded in an interface between a heavy metal and the ferromagnetic free layer. The magnetic domain wall nucleation centers are at two ends of the ferromagnetic free layer. A current pulse flows through the spin-orbit coupling layer to generate a spin current and the spin current is injected into the ferromagnetic free layer. Under a control of all-electrical controlled, an effective field of a spin-orbit torque drives domain wall to move and displace.

公开(公告)号：US20240087628A1

公开(公告)日：2024-03-14

申请号：US18259747

申请日：2020-12-30

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Guozhong XING ,  Huai LIN ,  Feng ZHANG ,  Di WANG ,  Long LIU ,  Changqing XIE ,  Ling LI ,  Ming LIU

IPC: G11C11/16 ,  H03K19/21 ,  H10B61/00 ,  H10N50/20 ,  H10N50/80 ,  H10N50/85

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H03K19/21 ,  H10B61/00 ,  H10N50/20 ,  H10N50/80 ,  H10N50/85

Abstract: A multi-resistance-state spintronic device, including: a top electrode and a bottom electrode respectively connected to a read-write circuit; and a magnetic tunnel junction between two electrodes. The magnetic tunnel junction includes from top to bottom: a ferromagnetic reference layer, a barrier tunneling layer, a ferromagnetic free layer, and a spin-orbit coupling layer. Nucleation centers are provided at two ends of the ferromagnetic free layer to generate a magnetic domain wall; the spin-orbit coupling layer is connected to the bottom electrode, and when a write pulse is applied, an electron spin current is generated and drives the magnetic domain wall through a spin-orbit torque to move; a plurality of local magnetic domain wall pinning centers are provided at an interface between the spin-orbit coupling layer and the ferromagnetic free layer to enhance a strength of a DM interaction constant between interfaces.

公开(公告)号：US20240122075A1

公开(公告)日：2024-04-11

申请号：US18264903

申请日：2021-03-19

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Guozhong XING ,  Long LIU ,  Di WANG ,  Huai LIN ,  Yan WANG ,  Xiaoxin XU ,  Ming LIU

IPC: H10N50/20 ,  G06N3/063 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/20 ,  G06N3/063 ,  H10B61/00 ,  H10N50/01 ,  H10N50/80 ,  H10N50/85

Abstract: An activation function generator based on a magnetic domain wall driven magnetic tunnel junction and a method for manufacturing the same are provided, including: a spin orbit coupling layer configured to generate a spin orbit torque; a ferromagnetic free layer formed on the spin orbit coupling layer and configured to provide a magnetic domain wall motion racetrack; a nonmagnetic barrier layer formed on the ferromagnetic free layer; a ferromagnetic reference layer formed on the nonmagnetic barrier layer; a top electrode formed on the ferromagnetic reference layer; antiferromagnetic pinning layers formed on two ends of the ferromagnetic free layer; a left electrode and a right electrode respectively formed at two positions on the antiferromagnetic pinning layers.

公开(公告)号：US20230280978A1

公开(公告)日：2023-09-07

申请号：US18005756

申请日：2021-01-21

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Guozhong XING ,  Huai LIN ,  Di WANG ,  Long LIU ,  Feng ZHANG ,  Changqing XIE ,  Ling LI ,  Ming LIU

IPC: G06F7/57 ,  G11C11/16

CPC classification number: G06F7/57 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: Provided are a spin orbit torque magnetic random access memory cell, a spin orbit torque magnetic random access memory array and a method for calculating a Hamming distance, wherein the spin orbit torque magnetic random access memory cell includes a magnetic tunnel junction; a first transistor, a drain terminal of the first transistor being connected to a bottom of the magnetic tunnel junction; and a second transistor, a drain terminal of the second transistor being connected to a top of the magnetic tunnel junction.