公开(公告)号：US20150318354A1

公开(公告)日：2015-11-05

申请号：US14646583

申请日：2013-08-12

Applicant: INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCE

Inventor： Huaxiang Yin ,  Huilong Zhu ,  Xiaolong Ma

IPC: H01L29/10 ,  H01L29/417 ,  H01L29/66 ,  H01L29/40 ,  H01L21/28 ,  H01L21/308 ,  H01L29/16 ,  H01L29/161 ,  H01L29/20 ,  H01L29/78 ,  H01L21/306

CPC classification number: H01L29/1054 ,  H01L21/28008 ,  H01L21/30604 ,  H01L21/308 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/267 ,  H01L29/401 ,  H01L29/41783 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

Abstract: A semiconductor device includes a fin extending on a substrate along a first direction; a gate extending along a second direction across the fin; and source/drain regions and a gate spacer on the fin at opposite sides of the gate, in which there is a surface layer on the top and/or sidewalls of the fin.

Abstract translation: 半导体器件包括沿着第一方向在衬底上延伸的翅片; 沿着第二方向延伸穿过翅片的门; 和源极/漏极区域和在栅极的相对侧的鳍上的栅极间隔物，其中在鳍的顶部和/或侧壁上存在表面层。