公开(公告)号：US11790968B2

公开(公告)日：2023-10-17

申请号：US17594684

申请日：2020-08-07

Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Inventor： Guozhong Xing ,  Huai Lin ,  Cheng Lu ,  Qi Liu ,  Hangbing Lv ,  Ling Li ,  Ming Liu

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1673 ,  G11C11/1675 ,  H10B61/22 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: The disclosure provides a spintronic device, a SOT-MRAM storage cell, a storage array and a in-memory computing circuit. The spintronic device includes a ferroelectric/ferromagnetic heterostructure, a magnetic tunnel junction, and a heavy metal layer between the ferroelectric/ferromagnetic heterostructure and the magnetic tunnel junction; the ferroelectric/ferromagnetic heterostructure includes a multiferroic material layer and a ferromagnetic layer arranged in a stacked manner, and the magnetic tunnel junction includes a free layer, an insulating layer and a reference layer arranged in a stacked manner, and the heavy metal layer is disposed between the ferromagnetic layer and the free layer. According to one or more embodiments of the disclosure, the spintronic device, the SOT-MRAM storage cell, the storage array and the in-memory computing circuit can realize deterministic magnetization inversion under the condition of no applied field assistance.