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公开(公告)号：US12107974B1
公开(公告)日：2024-10-01
申请号：US17756314
申请日：2021-04-19
Inventor： Feng Zhang , Yiming Wang , Qirui Ren
CPC classification number: H04L9/3278 , H04L9/0869 , H04L2209/12
Abstract: An encryption method includes: receiving cipher data which is binary data; determining target components in a resistive memory array according to values of respective bits in the cipher data; determining current values generated by respective columns of components according to the target components; and generating key data according to the current values generated by the respective columns of components. The present disclosure can effectively reduce computing power and power consumption of an encryption process in an edge device.
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2.发明授权公开(公告)号：US12002509B2
公开(公告)日：2024-06-04
申请号：US17756315
申请日：2021-07-02
Inventor： Feng Zhang , Qirui Ren
CPC classification number: G11C13/004 , G11C13/0059 , G11C2013/0045
Abstract: A data readout circuit of a RRAM includes: an adaptive current sense amplifier (CSA) and a reference current generator, the adaptive CSA is configured to electrically connect to the RRAM, and the adaptive CSA is electrically connected to the reference current generator; the reference current generator is configured to generate a basic reference current; the adaptive CSA is configured to obtain a reference current according to the basic reference current and a bit-line current of the RRAM; and the adaptive CSA is configured to compare the size of the reference current and that of the bit-line current so as to read out stored data. The present disclosure can improve the problem of data readout error due to the degradation of high resistance state of the RRAM.
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公开(公告)号：US11922257B2
公开(公告)日：2024-03-05
申请号：US17995859
申请日：2020-09-29
Inventor： Feng Zhang , Zhisheng Chen
IPC: G06K7/10
CPC classification number: G06K7/10366
Abstract: A signal processing method is applied to an RFID electronic tag, and includes: coding a digital baseband signal to obtain a coded signal; performing phase-shift keying modulation on the coded signal to obtain a first modulated signal; performing OFDM modulation on the first modulated signal to obtain a second modulated signal; and sending the second modulated signal to an RFID reader, by means of which the OFDM demodulation, phase-shift keying demodulation, and decoding are performed sequentially on the second modulated signal. According to the signal processing method and device, and the RFID system of one or more embodiments of present disclosure, the RFID system can be caused to effectively utilize bandwidth, thereby achieving high-speed transmission of signals and significantly reducing a bit error ratio of signal transmission.
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公开(公告)号：US11893271B2
公开(公告)日：2024-02-06
申请号：US17904619
申请日：2020-07-23
Inventor： Feng Zhang , Renjun Song
CPC classification number: G06F3/0655 , G06F3/061 , G06F3/0673 , G06N3/063
Abstract: A computing-in-memory circuit includes a Resistive Random Access Memory (RRAM) array and a peripheral circuit. The RRAM array comprises a plurality of memory cells arranged in an array pattern, and each memory cell is configured to store a data of L bits, L being an integer not less than 2. The peripheral circuit is configured to, in a storage mode, write more than one convolution kernels into the RRAM array, and in a computation mode, input elements that need to be convolved in a pixel matrix into the RRAM array and read a current of each column of memory cells, wherein each column of memory cells stores one convolution kernel correspondingly, and one element of the convolution kernel is stored in one memory cell correspondingly, and one element of the pixel matrix is correspondingly input into a word line that a row of memory cells connect.
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公开(公告)号：US20230140784A1
公开(公告)日：2023-05-04
申请号：US17995859
申请日：2020-09-29
Inventor： Feng ZHANG , Zhisheng CHEN
IPC: G06K7/10
Abstract: A signal processing method is applied to an RFID electronic tag, and includes: coding a digital baseband signal to obtain a coded signal; performing phase-shift keying modulation on the coded signal to obtain a first modulated signal; performing OFDM modulation on the first modulated signal to obtain a second modulated signal; and sending the second modulated signal to an RFID reader, by means of which the OFDM demodulation, phase-shift keying demodulation, and decoding are performed sequentially on the second modulated signal. According to the signal processing method and device, and the RFID system of one or more embodiments of present disclosure, the RFID system can be caused to effectively utilize bandwidth, thereby achieving high-speed transmission of signals and significantly reducing a bit error ratio of signal transmission.
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Patent Agency Ranking
公开(公告)号：US20220328275A1
公开(公告)日：2022-10-13
申请号：US17595770
申请日：2021-01-20
Inventor： Fazhan ZHAO , Jianhui BU , Jiajun LUO
IPC: H01J19/24
Abstract: The present disclosure discloses a power device including at least one vacuum packaged unit structure. The unit structure comprises a silicon substrate (100) and an emitter (200), a light modulator (300) and a collector (400) formed on the silicon substrate (100). On the one hand, the unified silicon-based process is compatible with the existing commercial process, so that it is easy for integration, simple for manufacture, and low in cost; on the other hand, the light modulator (300) is introduced and formed on the silicon substrate by a silicon-based process, which enhances field emission efficiency of the emitter (200), offsets the inconsistency of distances between the tips of the emitters (200) and the collector (400) caused by unevenness of the emitters, and increases the process redundancy of the cold cathode emitter.
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公开(公告)号：US20220310146A1
公开(公告)日：2022-09-29
申请号：US17594684
申请日：2020-08-07
Inventor： Guozhong XING , Huai LIN , Cheng LU , Qi LIU , Hangbing LV , Ling LI , Ming LIU
Abstract: The disclosure provides a spintronic device, a SOT-MRAM storage cell, a storage array and a in-memory computing circuit. The spintronic device includes a ferroelectric/ferromagnetic heterostructure, a magnetic tunnel junction, and a heavy metal layer between the ferroelectric/ferromagnetic heterostructure and the magnetic tunnel junction; the ferroelectric/ferromagnetic heterostructure includes a multiferroic material layer and a ferromagnetic layer arranged in a stacked manner, and the magnetic tunnel junction includes a free layer, an insulating layer and a reference layer arranged in a stacked manner, and the heavy metal layer is disposed between the ferromagnetic layer and the free layer. According to one or more embodiments of the disclosure, the spintronic device, the SOT-MRAM storage cell, the storage array and the in-memory computing circuit can realize deterministic magnetization inversion under the condition of no applied field assistance.
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公开(公告)号：US20220261621A1
公开(公告)日：2022-08-18
申请号：US17597720
申请日：2019-11-13
Inventor： Qi LIU , Zuheng WU , Tuo SHI , Ming LIU , Hangbing LV , Xumeng ZHANG , Wei WANG
Abstract: Disclosed are an artificial sensory nervous circuit and a manufacturing method thereof. The artificial sensory nervous circuit includes a sensor (S), a first memristor (RS), and a neuron circuit, where the first memristor (RS) has a unidirectional resistance characteristic. The sensor (S) is configured to sensing an external signal and generating an excitation signal according to the external signal. The first memristor (RS) is configured to generating a response signal according to the excitation signal. The neuron circuit is configured to perform charging and discharging according to the response signal so as to output a pulse signal. With the artificial sensory nervous circuit and the manufacturing method thereof, sensitivity and habituation characteristics of biological perception are realized by using a simple circuit.
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公开(公告)号：US20220253684A1
公开(公告)日：2022-08-11
申请号：US17597798
申请日：2019-11-29
Inventor： Qi LIU , Xumeng ZHANG , Ming LIU , Hangbing LV , Zuheng WU
Abstract: Disclosed is an afferent neuron circuit, which includes: a resistance Rc and a volatile threshold switching device TS, wherein the volatile threshold switching device TS is provided with a parasitic capacitor Cparasitic; a first end of the resistance Rc serves as a signal input terminal, and a second end of the resistance Rc serves as a signal output terminal; and a first end of the volatile threshold switching device TS is connected to the signal output terminal, and a second end of the volatile threshold switching device TS is grounded. The afferent neuron circuit provided in the content of the present disclosure has a simple structure and good scalability and is suitable for large-scale integration.
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公开(公告)号：US12278104B2
公开(公告)日：2025-04-15
申请号：US17928951
申请日：2021-09-09
Inventor： Fengwen Mu , Xinhua Wang , Sen Huang , Ke Wei , Xinyu Liu
IPC: H01L21/24 , H01L21/02 , H01L23/373
Abstract: The present disclosure relates to the technical field of semiconductors. Disclosed is a multi-layer semiconductor material structure and a preparation method thereof, solving the problems of the existing semiconductor materials that have poor heat dissipation, high cost, and cannot be mass-produced. The multi-layer semiconductor material structure includes a highly thermally conductive support substrate and a crystallized device function layer, where the device function layer is provided on the highly thermally conductive support substrate, and has a single-crystal surface layer.
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