公开(公告)号：US20240305479A1

公开(公告)日：2024-09-12

申请号：US17756314

申请日：2021-04-19

Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Inventor： Feng ZHANG ,  Yiming WANG ,  Qirui REN

IPC: H04L9/32 ,  H04L9/08

CPC classification number: H04L9/3278 ,  H04L9/0869 ,  H04L2209/12

Abstract: An encryption method includes: receiving cipher data which is binary data; determining target components in a resistive memory array according to values of respective bits in the cipher data; determining current values generated by respective columns of components according to the target components; and generating key data according to the current values generated by the respective columns of components. The present disclosure can effectively reduce computing power and power consumption of an encryption process in an edge device.

公开(公告)号：US20220244872A1

公开(公告)日：2022-08-04

申请号：US17595847

申请日：2021-04-22

Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Inventor： Feng ZHANG ,  Qiang HUO ,  Zhisheng CHEN ,  Qirui REN

IPC: G06F3/06 ,  G11C13/00

Abstract: The present disclosure discloses a storage method, a data processing method, a device and an apparatus based on a non-volatile memory, the method comprising: acquiring a weight value that needs to be stored in the non-volatile memory; determining a conductivity value corresponding to the weight value according to a first conversion method if the non-volatile memory is a high-resistance storage device; determining a conductivity value corresponding to the weight value according to a second conversion method which is different from the first conversion method if the non-volatile memory is a low-resistance memory device; and setting the non-volatile memory according to the conductivity value to store the weight value. The non-volatile memory and the data processing method, the device, and the apparatus provided by the present disclosure solve the problem of insufficient accuracy in weight values in existing non-volatile memories, realizing the technical effect of improving storage accuracy and data processing accuracy.

公开(公告)号：US20240153554A1

公开(公告)日：2024-05-09

申请号：US17756315

申请日：2021-07-02

Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Inventor： Feng ZHANG ,  Qirui REN

IPC: G11C13/00

CPC classification number: G11C13/004 ,  G11C13/0059 ,  G11C2013/0045

Abstract: The present disclosure discloses a data readout circuit of a RRAM and a RRAM circuit. The data readout circuit of the RRAM comprises: an adaptive current sense amplifier (CSA) and a reference current generator, the adaptive CSA is configured to electrically connect to the RRAM, and the adaptive CSA is electrically connected to the reference current generator; the reference current generator is configured to generate a basic reference current; the adaptive CSA is configured to obtain a reference current according to the basic reference current and a bit-line current of the RRAM; and the adaptive CSA is configured to compare the size of the reference current and that of the bit-line current so as to read out stored data. The present disclosure can improve the problem of data readout error due to the degradation of high resistance state of the RRAM.