公开(公告)号：US12278104B2

公开(公告)日：2025-04-15

申请号：US17928951

申请日：2021-09-09

Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Inventor： Fengwen Mu ,  Xinhua Wang ,  Sen Huang ,  Ke Wei ,  Xinyu Liu

IPC: H01L21/24 ,  H01L21/02 ,  H01L23/373

Abstract: The present disclosure relates to the technical field of semiconductors. Disclosed is a multi-layer semiconductor material structure and a preparation method thereof, solving the problems of the existing semiconductor materials that have poor heat dissipation, high cost, and cannot be mass-produced. The multi-layer semiconductor material structure includes a highly thermally conductive support substrate and a crystallized device function layer, where the device function layer is provided on the highly thermally conductive support substrate, and has a single-crystal surface layer.