公开(公告)号：US20230015379A1

公开(公告)日：2023-01-19

申请号：US17784544

申请日：2020-07-09

Applicant: INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Inventor： Qing Luo ,  Pengfei JIANG ,  Hangbing LV ,  Yuan Wang ,  Ming Liu

IPC: H01G9/042 ,  H01G9/048 ,  H01G9/07

Abstract: A HfO2-based ferroelectric capacitor and a preparation method therefor, and a HfO2-based ferroelectric memory, relating to the technical field of microelectronics. The purpose of enlarging the memory window of the ferroelectric memory is achieved by inserting an Al2O3 intercalation layer having a coefficient of thermal expansion smaller than TiN between a dielectric layer and an upper electrode (TiN) of the ferroelectric capacitor. The HfO2-based ferroelectric capacitor comprises a substrate layer, a lower electrode, a dielectric layer, an Al2O3 intercalation layer, an upper electrode and a metal protection layer from bottom to top. The memory window can be increased, information misreading is effectively prevented, and therefore, the reliability of the memory is improved.