公开(公告)号：FR2722611B1

公开(公告)日：2000-01-07

申请号：FR9507772

申请日：1995-06-28

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHRIS CHOI ,  NIRAJ RANJAN

IPC: H01L27/04 ,  H01L21/3205 ,  H01L21/76 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L23/52 ,  H01L27/088 ,  H01L27/092 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78

Abstract: A polysilicon field ring structure is used to eliminate any type of unwanted surface current leakage in an integrated power chip having high voltage and low voltage areas and enclosed in a plastic housing. All P-type diffusions not biased to the ground potential are surrounded by rings biased to the supply potential, and all N-type diffusions not biased to the supply potential are surrounded by rings biased to the ground potential.

公开(公告)号：IT1282405B1

公开(公告)日：1998-03-20

申请号：ITMI960870

申请日：1996-05-03

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHRIS CHOI ,  TAM DAVID C

IPC: H01L21/8234 ,  H01L27/088 ,  H02M1/08 ,  H03F1/52 ,  H03K17/06 ,  H03K17/687

Abstract: A method and circuit for driving power transistors arranged in series in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration. The series transistors are connected between a first voltage source and a common potential. A second voltage reference source is also provided. A terminal is connected to a common point coupled to anodes of intrinsic diodes of driver circuits for the power transistors. The second voltage source is connected between the common potential and the terminal so as to shift the level of the common point such that the intrinsic diodes will not forward bias due to negative output node transients generated by diode forward recovery and stray inductances. The circuit of the invention can also be incorporated in an integrated circuit including a single chip, e.g., a silicon chip.

公开(公告)号：ITMI960870A1

公开(公告)日：1997-11-03

申请号：ITMI960870

申请日：1996-05-03

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHRIS CHOI ,  TAM DAVID C

IPC: H01L27/088 ,  H01L21/8234 ,  H02M1/08 ,  H03F1/52 ,  H03K17/06 ,  H03K17/687

Abstract: A method and circuit for driving power transistors arranged in series in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration. The series transistors are connected between a first voltage source and a common potential. A second voltage reference source is also provided. A terminal is connected to a common point coupled to anodes of intrinsic diodes of driver circuits for the power transistors. The second voltage source is connected between the common potential and the terminal so as to shift the level of the common point such that the intrinsic diodes will not forward bias due to negative output node transients generated by diode forward recovery and stray inductances. The circuit of the invention can also be incorporated in an integrated circuit including a single chip, e.g., a silicon chip.

公开(公告)号：IT1275763B1

公开(公告)日：1997-10-17

申请号：ITMI951306

申请日：1995-06-16

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHRIS CHOI ,  NIRAJ RANJAN

IPC: H01L27/04 ,  H01L21/3205 ,  H01L21/76 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L23/52 ,  H01L27/088 ,  H01L27/092 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78

Abstract: A polysilicon field ring structure is used to eliminate any type of unwanted surface current leakage in an integrated power chip having high voltage and low voltage areas and enclosed in a plastic housing. All P-type diffusions not biased to the ground potential are surrounded by rings biased to the supply potential, and all N-type diffusions not biased to the supply potential are surrounded by rings biased to the ground potential.

公开(公告)号：DE19517975B4

公开(公告)日：2007-02-08

申请号：DE19517975

申请日：1995-05-16

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHRIS CHOI ,  NIRAJ RANJAN

IPC: H01L27/04 ,  H01L27/092 ,  H01L21/3205 ,  H01L21/76 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L23/52 ,  H01L27/088 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78

Abstract: A polysilicon field ring structure is used to eliminate any type of unwanted surface current leakage in an integrated power chip having high voltage and low voltage areas and enclosed in a plastic housing. All P-type diffusions not biased to the ground potential are surrounded by rings biased to the supply potential, and all N-type diffusions not biased to the supply potential are surrounded by rings biased to the ground potential.

公开(公告)号：ITMI951306A1

公开(公告)日：1996-12-16

申请号：ITMI951306

申请日：1995-06-16

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHRIS CHOI ,  NIRAJ RANJAN

IPC: H01L27/04 ,  H01L21/3205 ,  H01L21/76 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L23/52 ,  H01L27/088 ,  H01L27/092 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78

Abstract: A polysilicon field ring structure is used to eliminate any type of unwanted surface current leakage in an integrated power chip having high voltage and low voltage areas and enclosed in a plastic housing. All P-type diffusions not biased to the ground potential are surrounded by rings biased to the supply potential, and all N-type diffusions not biased to the supply potential are surrounded by rings biased to the ground potential.

公开(公告)号：IT1282404B1

公开(公告)日：1998-03-20

申请号：ITMI960869

申请日：1996-05-03

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHRIS CHOI ,  TAM DAVID C

IPC: H02M7/538 ,  H03K17/06 ,  H03K17/687

Abstract: A circuit for driving power transistors in a half bridge configuration from a control signal referenced to any potential between the line voltage for the power transistors and the line voltage return. The circuit includes an input circuit receiving a control signal referenced to any potential between the line voltage and the line voltage return, the input circuit being supplied with two voltage levels floating with respect to a common voltage level, a first level shifting circuit receiving an output of the input circuit which shifts the level of the output of the input circuit so that it is referenced to the common voltage level, a low side driver circuit for the power transistor in the half bridge configuration which functions as the low side power transistor, the low side driver circuit receiving the output referenced to the common voltage level, a second level shifting circuit which shifts the level of the output from the first level shifting circuit to produce a signal referenced to a second higher voltage level than said common level, and a driver circuit receiving the signal referenced to the second higher voltage level for driving the power transistor comprising the high side power transistor in the half bridge configuration. The circuit can be incorporated in an integrated circuit comprising a single chip, i.e., a silicon chip.

公开(公告)号：ITMI960869A1

公开(公告)日：1997-11-03

申请号：ITMI960869

申请日：1996-05-03

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHRIS CHOI ,  TAM DAVID C

IPC: H02M7/538 ,  H03K17/06 ,  H03K17/687

Abstract: A circuit for driving power transistors in a half bridge configuration from a control signal referenced to any potential between the line voltage for the power transistors and the line voltage return. The circuit includes an input circuit receiving a control signal referenced to any potential between the line voltage and the line voltage return, the input circuit being supplied with two voltage levels floating with respect to a common voltage level, a first level shifting circuit receiving an output of the input circuit which shifts the level of the output of the input circuit so that it is referenced to the common voltage level, a low side driver circuit for the power transistor in the half bridge configuration which functions as the low side power transistor, the low side driver circuit receiving the output referenced to the common voltage level, a second level shifting circuit which shifts the level of the output from the first level shifting circuit to produce a signal referenced to a second higher voltage level than said common level, and a driver circuit receiving the signal referenced to the second higher voltage level for driving the power transistor comprising the high side power transistor in the half bridge configuration. The circuit can be incorporated in an integrated circuit comprising a single chip, i.e., a silicon chip.

公开(公告)号：DE19517975A1

公开(公告)日：1996-01-18

申请号：DE19517975

申请日：1995-05-16

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHRIS CHOI ,  NIRAJ RANJAN

IPC: H01L27/04 ,  H01L21/3205 ,  H01L21/76 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L23/52 ,  H01L27/088 ,  H01L27/092 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L27/105

Abstract: A polysilicon field ring structure 70, 71 is used to eliminate any type of unwanted surface current leakage in an integrated power chip having high voltage and low voltage areas and enclosed in a plastic housing 81. All P-type difiusions not biased to the ground potential are surrounded by rings 70 biased to the supply potential, and all N-type diffusions not biased to the supply potential are surrounded by rings 71 biased to the ground potential.

公开(公告)号：ITMI951306D0

公开(公告)日：1995-06-16

申请号：ITMI951306

申请日：1995-06-16

Applicant: INT RECTIFIER CORP

Inventor： CHONGWOOK CHRIS CHOI ,  NIRAJ RANJAN

IPC: H01L27/04 ,  H01L21/3205 ,  H01L21/76 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8238 ,  H01L23/52 ,  H01L27/088 ,  H01L27/092 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78

Abstract: A polysilicon field ring structure is used to eliminate any type of unwanted surface current leakage in an integrated power chip having high voltage and low voltage areas and enclosed in a plastic housing. All P-type diffusions not biased to the ground potential are surrounded by rings biased to the supply potential, and all N-type diffusions not biased to the supply potential are surrounded by rings biased to the ground potential.