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    3.
    发明专利
    未知

    公开(公告)号：FR2733861B1

    公开(公告)日：1998-03-27

    申请号：FR9605548

    申请日：1996-05-03

    Applicant: INT RECTIFIER CORP

    Inventor： CHONGWOOK CHOI ,  TAM DAVID C

    IPC: H01L27/088 ,  H01L21/8234 ,  H02M1/08 ,  H03F1/52 ,  H03K17/06 ,  H03K17/687 ,  H02M3/155 ,  H03K17/082 ,  H01L27/00

    Abstract: A method and circuit for driving power transistors arranged in series in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration. The series transistors are connected between a first voltage source and a common potential. A second voltage reference source is also provided. A terminal is connected to a common point coupled to anodes of intrinsic diodes of driver circuits for the power transistors. The second voltage source is connected between the common potential and the terminal so as to shift the level of the common point such that the intrinsic diodes will not forward bias due to negative output node transients generated by diode forward recovery and stray inductances. The circuit of the invention can also be incorporated in an integrated circuit including a single chip, e.g., a silicon chip.

    4.
    发明专利
    未知

    公开(公告)号：FR2733861A1

    公开(公告)日：1996-11-08

    申请号：FR9605548

    申请日：1996-05-03

    Applicant: INT RECTIFIER CORP

    Inventor： CHONGWOOK CHOI ,  TAM DAVID C

    IPC: H01L27/088 ,  H01L21/8234 ,  H02M1/08 ,  H03F1/52 ,  H03K17/06 ,  H03K17/687 ,  H02M3/155 ,  H03K17/082 ,  H01L27/00

    Abstract: A method and circuit for driving power transistors arranged in series in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration. The series transistors are connected between a first voltage source and a common potential. A second voltage reference source is also provided. A terminal is connected to a common point coupled to anodes of intrinsic diodes of driver circuits for the power transistors. The second voltage source is connected between the common potential and the terminal so as to shift the level of the common point such that the intrinsic diodes will not forward bias due to negative output node transients generated by diode forward recovery and stray inductances. The circuit of the invention can also be incorporated in an integrated circuit including a single chip, e.g., a silicon chip.

    5.
    发明专利
    未知

    公开(公告)号：DE19617832A1

    公开(公告)日：1996-11-07

    申请号：DE19617832

    申请日：1996-05-03

    Applicant: INT RECTIFIER CORP

    Inventor： CHOI CHONGWOOK CHRIS ,  TAM DAVID C

    IPC: H01L27/088 ,  H01L21/8234 ,  H02M1/08 ,  H03F1/52 ,  H03K17/06 ,  H03K17/687 ,  H01L23/58 ,  H03K17/00

    Abstract: A method and circuit for driving power transistors arranged in series in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration. The series transistors are connected between a first voltage source and a common potential. A second voltage reference source is also provided. A terminal is connected to a common point coupled to anodes of intrinsic diodes of driver circuits for the power transistors. The second voltage source is connected between the common potential and the terminal so as to shift the level of the common point such that the intrinsic diodes will not forward bias due to negative output node transients generated by diode forward recovery and stray inductances. The circuit of the invention can also be incorporated in an integrated circuit comprising a single chip, e.g., a silicon chip.

    6.
    发明专利
    未知

    公开(公告)号：IT1282405B1

    公开(公告)日：1998-03-20

    申请号：ITMI960870

    申请日：1996-05-03

    Applicant: INT RECTIFIER CORP

    Inventor： CHONGWOOK CHRIS CHOI ,  TAM DAVID C

    IPC: H01L21/8234 ,  H01L27/088 ,  H02M1/08 ,  H03F1/52 ,  H03K17/06 ,  H03K17/687

    Abstract: A method and circuit for driving power transistors arranged in series in a half bridge configuration allowing for excessive negative swing of an output node between the transistors in the half bridge configuration. The series transistors are connected between a first voltage source and a common potential. A second voltage reference source is also provided. A terminal is connected to a common point coupled to anodes of intrinsic diodes of driver circuits for the power transistors. The second voltage source is connected between the common potential and the terminal so as to shift the level of the common point such that the intrinsic diodes will not forward bias due to negative output node transients generated by diode forward recovery and stray inductances. The circuit of the invention can also be incorporated in an integrated circuit including a single chip, e.g., a silicon chip.

    7.
    发明专利
    未知

    公开(公告)号：DE19617358A1

    公开(公告)日：1996-11-07

    申请号：DE19617358

    申请日：1996-04-30

    Applicant: INT RECTIFIER CORP

    Inventor： CHOI CHONGWOOK CHRIS ,  TAM DAVID C

    IPC: H02M7/538 ,  H03K17/06 ,  H03K17/687 ,  H02M1/08 ,  H03K19/0175 ,  H01L23/58 ,  H01L27/06

    Abstract: A circuit for driving power transistors in a half bridge configuration from a control signal referenced to any potential between the line voltage for the power transistors and the line voltage return. The circuit includes an input circuit receiving a control signal referenced to any potential between the line voltage and the line voltage return, the input circuit being supplied with two voltage levels floating with respect to a common voltage level, a first level shifting circuit receiving an output of the input circuit which shifts the level of the output of the input circuit so that it is referenced to the common voltage level, a low side driver circuit for the power transistor in the half bridge configuration which functions as the low side power transistor, the low side driver circuit receiving the output referenced to the common voltage level, a second level shifting circuit which shifts the level of the output from the first level shifting circuit to produce a signal referenced to a second higher voltage level than said common level, and a driver circuit receiving the signal referenced to the second higher voltage level for driving the power transistor comprising the high side power transistor in the half bridge configuration. The circuit can be incorporated in an integrated circuit comprising a single chip, i.e., a silicon chip.

    8.
    发明专利
    未知

    公开(公告)号：DE19525237A1

    公开(公告)日：1996-01-18

    申请号：DE19525237

    申请日：1995-07-11

    Applicant: INT RECTIFIER CORP

    Inventor： TAM DAVID C ,  CHOI CHONGWOOK CHRIS

    IPC: H03K19/003 ,  H03K17/16 ,  H03K19/0185 ,  H03K19/0944 ,  H03K17/687

    Abstract: The logic circuit of the level shifting circuit of a high side MOS gate device is made reset dominant to make the circuit immune to noise glitches. The reset dominance is obtained by causing a reset signal to be produced at a wider range of high side floating supply offset voltage than that at which the set signal can be produced to prevent the chance of a set when the high side power MOSFET should be off. The reset dominance is obtained by increasing the size of the reset voltage dropping resistor or by adjusting the input threshold of the circuit reading the set and reset voltage dropping resistors.

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