PHOTOVOLTAIC ISOLATOR
    2.
    发明专利

    公开(公告)号:GB2184602B

    公开(公告)日:1988-05-25

    申请号:GB8700582

    申请日:1987-01-12

    Abstract: The gate capacitance of a Field effect transistor (24) used as a switch is rapidly charged via a diode (35) to turn the FET on, and is rapidly discharged to turn the FET off by a switching transistor (36) connected across the diode and the FET such that it becomes conductive only when the diode becomes reverse biased, thereby providing a discharge path for the gate capacitance. The circuit is used in a photovoltaic relay, the FET being turned on by a photovoltaic isolator (20) having a LED 21 energised by an input signal optically coupled to and dielectrically isolated from a series-connected stack of photo diodes connected to the switching FET, which may comprise a bilateral semiconductor FET (BOSFET).

    Photovoltaic relay
    3.
    发明专利

    公开(公告)号:GB2154820A

    公开(公告)日:1985-09-11

    申请号:GB8501283

    申请日:1985-01-18

    Abstract: A high voltage bidirectional output semiconductor field effect transistor (BOSFET) 24 is disclosed which is turned on from the electrical output of a photovoltaic stack 19 which is energized from an LED 21. The process for manufacture of the device is also disclosed. The BOSFET device consists of two lateral field effect transistors 30, 31 formed in an implanted N( - ) region (71) in a P( - ) substrate (70). A diode 35, PNP transistor 36 and resistor 37 are integrated into the same chip containing the lateral BOSFET device to form a solid state relay circuit having characteristics similar to a reed relay. A photovoltaic isolator 20 consists of a stack of semiconductor wafers (320) which are alloyed together by an aluminum silicon alloy foil (43). Each of the wafers consists of a P-type body having P + and N + diffusions on its opposite surfaces. The wafers are stacked with the same forward conduction polarity. Individual photoisolator stacks (345) are sliced from the completed stack to any desired dimension. Each individual stack is mounted with a light source (360), preferably an LED, which is arranged to illuminate the edge of each wafer within the stack.

    4.
    发明专利
    未知

    公开(公告)号:IT8519170D0

    公开(公告)日:1985-01-21

    申请号:IT1917085

    申请日:1985-01-21

    Abstract: The gate capacitance of a Field effect transistor (24) used as a switch is rapidly charged via a diode (35) to turn the FET on, and is rapidly discharged to turn the FET off by a switching transistor (36) connected across the diode and the FET such that it becomes conductive only when the diode becomes reverse biased, thereby providing a discharge path for the gate capacitance. The circuit is used in a photovoltaic relay, the FET being turned on by a photovoltaic isolator (20) having a LED 21 energised by an input signal optically coupled to and dielectrically isolated from a series-connected stack of photo diodes connected to the switching FET, which may comprise a bilateral semiconductor FET (BOSFET).

    6.
    发明专利
    未知

    公开(公告)号:IT1183281B

    公开(公告)日:1987-10-22

    申请号:IT1917085

    申请日:1985-01-21

    Abstract: The gate capacitance of a Field effect transistor (24) used as a switch is rapidly charged via a diode (35) to turn the FET on, and is rapidly discharged to turn the FET off by a switching transistor (36) connected across the diode and the FET such that it becomes conductive only when the diode becomes reverse biased, thereby providing a discharge path for the gate capacitance. The circuit is used in a photovoltaic relay, the FET being turned on by a photovoltaic isolator (20) having a LED 21 energised by an input signal optically coupled to and dielectrically isolated from a series-connected stack of photo diodes connected to the switching FET, which may comprise a bilateral semiconductor FET (BOSFET).

    PHOTOVOLTAIC RELAY
    8.
    发明专利

    公开(公告)号:GB2154820B

    公开(公告)日:1988-05-25

    申请号:GB8501283

    申请日:1985-01-18

    Abstract: The gate capacitance of a Field effect transistor (24) used as a switch is rapidly charged via a diode (35) to turn the FET on, and is rapidly discharged to turn the FET off by a switching transistor (36) connected across the diode and the FET such that it becomes conductive only when the diode becomes reverse biased, thereby providing a discharge path for the gate capacitance. The circuit is used in a photovoltaic relay, the FET being turned on by a photovoltaic isolator (20) having a LED 21 energised by an input signal optically coupled to and dielectrically isolated from a series-connected stack of photo diodes connected to the switching FET, which may comprise a bilateral semiconductor FET (BOSFET).

    9.
    发明专利
    未知

    公开(公告)号:DE3502180A1

    公开(公告)日:1985-08-01

    申请号:DE3502180

    申请日:1985-01-23

    Abstract: The gate capacitance of a Field effect transistor (24) used as a switch is rapidly charged via a diode (35) to turn the FET on, and is rapidly discharged to turn the FET off by a switching transistor (36) connected across the diode and the FET such that it becomes conductive only when the diode becomes reverse biased, thereby providing a discharge path for the gate capacitance. The circuit is used in a photovoltaic relay, the FET being turned on by a photovoltaic isolator (20) having a LED 21 energised by an input signal optically coupled to and dielectrically isolated from a series-connected stack of photo diodes connected to the switching FET, which may comprise a bilateral semiconductor FET (BOSFET).

    10.
    发明专利
    未知

    公开(公告)号:DE2253423A1

    公开(公告)日:1973-05-17

    申请号:DE2253423

    申请日:1972-10-31

    Abstract: A solid state relay circuit is provided which has four terminals, two for power input, and two for signal input. The circuit consists of a full-wave diode bridge circuit having a pilot thyristor connected across its D.C. terminals. A firing control circuit also energized from these bridge terminals applies a firing signal to the thyristor gate responsive to the receipt of an input radiation signal from an optically isolated signal circuit connected to the signal input terminals, and causes the delivery of a firing signal to a thyristor or triac when the input voltage is near or at zero. Thus, the thyristor or triac in the relay output circuit begins to conduct under zero voltage conditions.

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