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    Laser to optical fiber coupling
    1.
    发明授权
    Laser to optical fiber coupling 失效
    激光到光纤耦合

    公开(公告)号：US3760297A

    公开(公告)日：1973-09-18

    申请号：US3760297D

    申请日：1972-01-20

    Applicant: INT STANDARD ELECTRIC CORP

    Inventor： THOMPSON G

    IPC: G02B6/42 ,  H01S5/026 ,  H01S5/10 ,  H01S3/02

    CPC classification number: H01S5/1071 ,  G02B6/4206 ,  G02B6/4287 ,  H01S5/026

    Abstract: An optical fiber is coupled along an edge of a rectangular GaAs injection laser. A circulatory mode of light reflection is established between the four side walls of the laser at an angle of incidence which provides a narrow rectangular strip of light. The fiber is positioned transversely at one reflection point or corner of the light path. A narrow rectangular metal strip contact on one face of the laser confines current to the desired path. A reflective coating on an end of the fiber may provide a unidirectional optical source. Other variations include an optical amplifier for a light input source and an optical coupler from an input fiber to an output fiber.

    Abstract translation: 沿着矩形GaAs注入激光器的边缘耦合光纤。 在激光的四个侧壁之间以入射角建立光反射的循环模式，其提供窄的矩形条带。 纤维横向定位在光路的一个反射点或拐角处。 在激光器的一个面上的窄矩形金属带接触将电流限制到所需的路径。 光纤端部上的反射涂层可以提供单向光源。 其他变型包括用于光输入源的光放大器和从输入光纤到输出光纤的光耦合器。

    Gallium arsenide laser fiber coupling
    2.
    发明授权
    Gallium arsenide laser fiber coupling 失效
    阿拉斯加激光激光光纤耦合

    公开(公告)号：US3803511A

    公开(公告)日：1974-04-09

    申请号：US29867972

    申请日：1972-10-18

    Applicant: INT STANDARD ELECTRIC CORP

    Inventor： THOMPSON G

    IPC: G02B6/30 ,  G02B6/42 ,  H01S5/10 ,  H01S5/14 ,  H01S3/02

    CPC classification number: H01S5/1071 ,  G02B6/30 ,  G02B6/42 ,  G02B6/4206 ,  G02B6/421 ,  H01S5/14 ,  H01S5/146

    Abstract: The coupling of an injection laser diode into an optical fiber is improved by a short resonating length of fiber. A partially reflective layer is positioned at the remote end of the resonator section and a highly reflective layer with an aperture slit and anti-reflection layer in the slit are disposed at the laser end. A circulatory laser mode can also be improved using a resonator section with a matching interference layer at the coupling point. A rectangular contact strip confines current to the desired circulating area. Another variation includes two different coupling points with one more tightly coupled than the other for circulating light in one direction.

    OPTICAL WAVEGUIDE COUPLERS
    5.
    发明专利
    OPTICAL WAVEGUIDE COUPLERS 未知

    公开(公告)号：ZA7651B

    公开(公告)日：1976-12-29

    申请号：ZA7651

    申请日：1976-01-06

    Applicant: INT STANDARD ELECTRIC CORP

    Inventor： LOVELACE D ,  THOMPSON G

    IPC: G02F1/313 ,  H01P

    Abstract: 1529451 Controlling light STANDARD TELE PHONES & CABLES Ltd 6 Jan 1976 [27 Feb 1975] 8244/75 Addition to 1437067 Heading G2F In a modification of the optical waveguide coupler of the parent Specification, lateral optical confinement is produced by providing protruding ribs on one surface of the coupler rather than by changes in free carrier concentration, since high free carrier concentrations produce undesirable optical loss, and the depletion region extending into or through one of the guides or the region therebetween may be that occurring on either side of a p-n junction, but preferably the n-type side. In Fig. 1, a GaAS n-type layer 10 is disposed between GaAlAS n-type layers 11 and 12 of lower refractive index. A layer of p-type GaAlAS having a relatively high carrier concentration is disposed on layer 12 and masked and selectively anodized to leave an oxide layer 13 through which protrude two ribs 14 providing lateral confinement for guide regions in layer 10. With heating the zinc p-type dopant diffuses into layer 12 but is arrested at layer 10 due to the higher doping level thereof, so that a junction region 16 is formed at or in each guide. Electrodes 17, 17 and one (not shown) on the substrate 11 are provided to complete a structure similar to Fig. 4 (not shown) of the parent Specification. In Fig. 2 (not shown), layer 12 is omitted and the anodization of the p-type layer is limited so as to leave a portion between the ribs. A channel between the ribs, extending down into the substrate, is rendered semi-insulating by proton bombardment, and like channels may be provided adjacent the outer sides of the ribs to reduce capacitance effects. A diffusion step is not required and hence the carrier concentration in layer 10 may be reduced. Fig. 3 is similar to (Fig. 2) but the ribs are proton bombarded and the intervening region masked. The p-type layer does not require anodization and the p-n junction is here formed between the guides as in Fig. 1 of the parent Specification. The embodiments of (Fig. 4) and Fig. 5 are similar to Fig. 1, but the ribs 14 are doped with (non-mobile) germanium, there being no diffusion step, so that the p-n junctions are spaced from the guiding layer 10 and the layer 12" is lightly doped to ensure that the high field associated with reverse biasing of the junction extends to layer 10". In addition, in Fig. 5 only, which depends on the refractive index change induced by the electric field rather than the change in carrier concentration, the layer 10" is relatively lightly doped, and a further lightly doped layer 50 of the same composition as heavily doped substrate 11" is provided between the substrate and the guiding layer. Due to the low doping of layer 10" the refractive index change thereof due to carrier removal is low and the associated change in optical absorption is also small, preventing attenuation mismatch between the guides and enabling either output port of the coupler to be substantially isolated. The layer 50 and modified layer 10" may also be provided in (Fig. 2). In the embodiment of Figs. 1-3, the doping and thickness of layer 10 may be such that free carriers are substantially removed at a reverse bias just below breakdown value. Preferably however, for a greater change in carrier concentration, the layer has a composite refractive index and comprises a highly doped region adjacent the p-n junction and an underlying lightly doped region (of the same material).

    OPTICAL WAVEGUIDE COUPLERS
    7.
    发明专利
    OPTICAL WAVEGUIDE COUPLERS 未知

    公开(公告)号：ZA754350B

    公开(公告)日：1976-06-30

    申请号：ZA754350

    申请日：1975-07-08

    Applicant: INT STANDARD ELECTRIC CORP

    Inventor： THOMPSON G

    IPC: G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  G02F1/025 ,  G02F1/03 ,  G02F1/05 ,  G02F1/313 ,  H01S5/00 ,  H01S5/042 ,  H01P

    Abstract: This invention relates to an optical waveguide switch and directional coupler providing variable coupling between two optical fibers. The coupler is fabricated in semiconductive material such as GaAs or GaAlAs. A double heterostructure is used having a higher index of refraction middle layer. Optical fibers are inserted in channels in the semiconductive material. Varying the reverse bias across the heterostructure junctions located in the material between the channels electrically changes the refractive index of the material and alters the coupling between the fibers. The device is applicable to switching in optical communication systems.

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