公开(公告)号：US6410359B2

公开(公告)日：2002-06-25

申请号：US81763901

申请日：2001-03-26

Applicant: INTEL CORP

Inventor： CONNOLLY KEVIN M ,  KANG JUNG S ,  LANDAU BERNI W ,  BREISCH JAMES E ,  KAKIZAWA AKIRA ,  PARKS JR JOSEPH W ,  BEILEY MARK A ,  LI ZONG-FU ,  WEBER CORY E ,  YU SHAOFENG

IPC: H01L21/00 ,  H01L21/329 ,  H01L21/336 ,  H01L21/76 ,  H01L27/146 ,  H01L31/00 ,  H01L31/0232 ,  H01L31/06 ,  H01L31/103

CPC classification number: H01L31/103 ,  H01L27/1463

Abstract: Leakage current may be reduced in trench isolated semiconductor devices by providing a buffer between the trench isolation and an active area. For example, with a trench isolated photodiode, a buffer of opposite conductivity type may be provided between the trench and the diffusion that forms the p-n junction of the photodiode.

Abstract translation: 在沟槽隔离半导体器件中，通过在沟槽隔离和有源区域之间提供缓冲器可以减少泄漏电流。 例如，使用沟槽隔离光电二极管，可以在沟槽和形成光电二极管的p-n结的扩散之间提供相反导电类型的缓冲器。