公开(公告)号：MY136517A

公开(公告)日：2008-10-31

申请号：MYPI20013736

申请日：2001-08-08

Applicant: INTEL CORP

Inventor： QING MA

IPC: H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538

Abstract: A PACKAGING TECHNOLOGY THAT FABRICATES A MICROELECTRONIC PACKAGE INCLUDING BUILD-UP LAYERS, HAVING CONDUCTIVE TRACES, ON AN ENCAPSULATED MICROELECTRONIC DIE AND ON OTHER PACKAGING MATERIAL THAT SURROUNDS THEMICROELECTRONIC DIE, WHEREIN AN MOISTURE BARRIER STRUCTURE IS SIMULTANEOUSLY FORMED WITH THE CONDUCTIVE TRACES. SN EXEMPLARY MICROELECTRONIC DIE HAVING AN ACTIVE SURFACE AND AT LEAST ONE SIDE. PACKAGING MATERIAL(S) IS DISPOSED ADJACENT THE MICROELECTRONIC DIE SIDE(S), WHEREIN THE PACKAGING MATERIAL INCLUDES AT LEAST ONE SURFACE SUBSTANTIALLY PLANAR TO THE MICROELECTRONIC DIE ACTIVE SURFACE. A FIRST DIELECTRIC MATERIAL LAYER MAY BE DISPOSED ON AT LEAST A PORTION OF THE MICROELECTRONIC DIE ACTIVE SURFACE AND THE ENCAPSULATION MATERIAL SURFACE. AT LEAST ONE CONDUCTIVE TRACE IS THEN FORMED ON THE FIRST DIELECTRIC MATERIAL LAYER TO ELECTRICALLY CONTACT THE MICROELECTRONIC DIE ACTIVE SURFACE. A BARRIER STRUCTURE PROXIMATE AN EDGE OF THE MICROELECTRONIC PACKAGE IS FORMED SIMULTANEOUSLY OUT OF THE SAME MATERIAL AS THE CONDUCTIVE TRACES.

公开(公告)号：MY135407A

公开(公告)日：2008-04-30

申请号：MYPI20032750

申请日：2003-07-22

Applicant: INTEL CORP

Inventor： QING MA

IPC: B81B3/00 ,  H01H1/00 ,  H01H37/54 ,  H01H61/00 ,  H01H61/01

Abstract: A MICROELECTROMECHANICAL SYSTEM (MEMS) THAT INCLUDES A FIRST ELECTRO-THERMAL ACTUATOR, A SECOND ELECTRO-THERMAL ACTUATOR (56) AND A BEAM (52) HAVING A FIRST SIDE (58) AND A SECOND SIDE (60). THE FIRST ELECTRO-THERMAL ACTUATOR APPLIES A FORCE TO THE FIRST SIDE (58) OF THE BEAM (52) AS CURRENT PASSES THROUGH THE FIRST ELECTRO-THERMAL ACTUATOR AND THE SECOND ELECTRO-THERMAL ACTUATOR (56) APPLIES A FORCE TO THE SECOND SIDE (60) OF THE BEAM (52) AS CURRENT PASSES THROUGH THE SECOND ELECTRO-THERMAL ACTUATOR (56).(FIG 3B)

公开(公告)号：MY136656A

公开(公告)日：2008-11-28

申请号：MYPI20024718

申请日：2002-12-17

Applicant: INTEL CORP

Inventor： QING MA ,  LI-PENG WANG ,  VALLURI RAO

IPC: H03H3/02 ,  H03H9/17 ,  H03H9/58

Abstract: A FILM BULK ACOUSTIC RESONATOR IS FORMED ON A SUBSTRATE (300) HAVING A MAJOR SURFACE (310). THE FILM BULK ACOUSTIC RESONATOR INCLUDES AN ELONGATED STACK. THE ELONGATED STACK INCLUDES A LAYER OF PIEZOELECTRIC MATERIAL (1000) POSITIONED BETWEEN A FIRST CONDUCTIVE LAYER (1610) DEPOSITED ON A FIRST SURFACE OF THE LAYER OF PIEZOELECTRIC MATERIAL (1000), AND A SECOND CONDUCTIVE LAYER (1612) DEPOSITED ON A SECOND SURFACE OF THE LAYER OF PIEZOELECTRIC MATERIAL (1000). THE ELONGATED STACK IS POSITIONED SUBSTANTIALLY PERPENDICULAR WITH RESPECT TO THE MAJOR SURFACE (310, 312) OF THE SUBSTRATE (300). THE FIRST AND SECOND CONDUCTIVE LAYERS (1612, 1610) ARE PLACED ON THE LAYER OF PIEZOELECTRIC MATERIAL (1000) SUBSTANTIALLY SIMULTANEOUSLY AND IN ONE PROCESSING STEP. THE MAJOR SURFACE (310, 312) OF THE SUBSTRATE (300) IS IN A HORIZONTAL PLANE AND THE STACK OF THE FILM BULK ACOUSTIC RESONATOR IS IN A SUBSTANTIALLY VERTICAL PLANE. THE RESONATOR STRUCTURE FORMED MAY BE USED EITHER AS A RESONATOR OR A FILTER.

公开(公告)号：HK1052251A1

公开(公告)日：2003-09-05

申请号：HK03104452

申请日：2003-06-20

Applicant: INTEL CORP

Inventor： QING MA

IPC: H01L20060101 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/538

公开(公告)号：MY141327A

公开(公告)日：2010-04-16

申请号：MYPI20013852

申请日：2001-08-15

Applicant: INTEL CORP

Inventor： QING MA ,  XIAO-CHUN MU ,  FUJIMOTO HARRY H

IPC: H01L23/31 ,  H01L21/56 ,  H01L21/60 ,  H01L21/68 ,  H01L23/538 ,  H05K1/18 ,  H05K3/46

Abstract: A MICROELECTRONIC PACKAGE INCLUDING A MICROELECTRONIC DIE (102) HAVING AN ACTIVE SURFACE (106) AND AT LEAST ONE SIDE (116). AN ENCAPSULATION MATERIAL (112) IS DISPOSED ADJACENT THE MICROELECTRONIC DIE SIDE(S) (116), WHEREIN THE ENCAPSULATION MATERIAL (112) INCLUDES AT LEAST ONE SURFACE (110) SUBSTANTIALLY PLANAR TO THE MICROELECTRONIC DIE ACTIVE SURFACE (106). A FIRST DIELECTRIC MATERIAL LAYER (118) MAY BE DISPOSED ON AT LEAST A PORTION OF THE MICROELECTRONIC DIE ACTIVE SURFACE (106) AND THE ENCAPSULATION MATERIAL SURFACE. AT LEAST ONE CONDUCTIVE TRACE (124) IS THEN DISPOSED ON THE FIRST DIELECTRIC MATERIAL LAYER (118). THE CONDUCTIVE TRACE(S) IS .IN ELECTRICAL CONTACT WITH THE MICROELECTRONIC DIE ACTIVE SURFACE (106). AT LEAST ONE CONDUCTIVE TRACE EXTENDS ADJACENT THE MICROELECTRONIC DIE ACTIVE SURFACE (106) AND ADJACENT THE ENCAPSULATION MATERIAL SURFACE.

公开(公告)号：MY128160A

公开(公告)日：2007-01-31

申请号：MYPI20014017

申请日：2001-08-27

Applicant: INTEL CORP

Inventor： VU QUAT T ,  JIAN LI ,  QING MA ,  HENAO MARIA V ,  XIAO-CHUN MU

IPC: H01L23/02 ,  H01L23/532

Abstract: A MICROELECTRONIC PACKAGE INLCUDING A MICROELECTRONIC DIE DISPOSED WITHIN AN OPENING IN A MICROELECTRONIC PACKAGING CORE,WHEREIN AN ENCAPSULATION MATERIAL IS DISPOSED WITHIN PORTIONS OF THE OPENING NOT OCCUPIED BY THE MICROELECTRONIC DIE.BUILD-UP LAYERS OF DIELECTRIC MATERIALS AND CONDUCTIVE TRACES ARE THEN FABRICATED ON THE MICROELECTRONIC DIE,THE ENCAPSULANT MATERIAL,AND THE MICROELECTRONIC PACKAGE CORE TO FROM THE MICROELECTRONIC PACKAGE.

公开(公告)号：GB2511704B

公开(公告)日：2018-10-24

申请号：GB201411223

申请日：2013-06-20

Applicant: INTEL CORP

Inventor： KEVIN LIN ,  FARAS EID ,  QING MA

IPC: G01P15/105 ,  B81B3/00 ,  G01C19/56

公开(公告)号：MY134267A

公开(公告)日：2007-11-30

申请号：MYPI20032863

申请日：2003-07-30

Applicant: INTEL CORP

Inventor： QING MA

IPC: B81B3/00 ,  H01H51/22 ,  H01H59/00

Abstract: A MICROELECTROMECHANICAL SYSTEM (MEMS) SWITCH (100) THAT INCLUDES A SIGNAL CONTACT (102), AN ACTUATION ELECTRODE (112) AND A BEAM (110) THAT ENGAGES THE SIGNAL CONTACT WHEN A VOLTAGE IS APPLIED TO THE ACTUATION ELECTRODE (112). THE SIGNAL CONTACT INCLUDES A FIRST PORTION AND A SECOND PORTION.THE ACTUATION ELECTRODE (112) IS POSITIONED BETWEEN THE FIRST AND SECOND PORTIONS OF THE SIGNAL CONTACT (102).(FIG 11)

公开(公告)号：GB2392011B

公开(公告)日：2006-08-23

申请号：GB0314179

申请日：2003-06-18

Applicant: INTEL CORP

Inventor： QING MA ,  CHOU TSUNG-KUAN ALLEN

IPC: B81C1/00 ,  H01L23/522 ,  B81B7/00 ,  B81B7/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L23/66 ,  H01L27/04

Abstract: A conductive bridge (16) in a second conductive layer may be utilized to join a pair of spaced apart conductive strips (12) in a first conductive layer. A gap (44) between the first and second strips (12) may be bridged by the bridge (16) while isolating both the first and second strips (12) and the bridge (16) itself from another conductor (18) which extends through the gap (44) between the first and second strips (12).

公开(公告)号：HK1060652A1

公开(公告)日：2004-08-13

申请号：HK04103519

申请日：2004-05-18

Applicant: INTEL CORP

Inventor： QING MA

IPC: B81C1/00 ,  H01L20060101 ,  B81B20060101 ,  B81B7/00 ,  B81B7/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L23/66 ,  H01L27/04

Abstract: A conductive bridge (16) in a second conductive layer may be utilized to join a pair of spaced apart conductive strips (12) in a first conductive layer. A gap (44) between the first and second strips (12) may be bridged by the bridge (16) while isolating both the first and second strips (12) and the bridge (16) itself from another conductor (18) which extends through the gap (44) between the first and second strips (12).