公开(公告)号：DE112006000647B4

公开(公告)日：2010-09-23

申请号：DE112006000647

申请日：2006-03-16

Applicant: INTEL CORP

Inventor： KOBRINSKY MAURO ,  HE JUN ,  O'BRIEN KEVIN ,  ZHOU YING ,  RAMANATHAN SHRIRAM

IPC: H01L21/58 ,  B23K35/30 ,  H01L21/768 ,  H01L21/98 ,  H01L25/065

公开(公告)号：DE112006000647T5

公开(公告)日：2008-03-20

申请号：DE112006000647

申请日：2006-03-16

Applicant: INTEL CORP

Inventor： KOBRINSKY MAURO ,  HE JUN ,  O'BRIEN KEVIN ,  ZHOU YING ,  RAMANATHAN SHRIRAM

IPC: H01L21/98 ,  B23K35/30

公开(公告)号：DE112005001094B4

公开(公告)日：2015-05-13

申请号：DE112005001094

申请日：2005-04-29

Applicant: INTEL CORP

Inventor： RAMANATHAN SHRIRAM ,  CHRYSLER GREGORY

IPC: H01L35/30 ,  F25B21/02 ,  H01L23/38 ,  H01L23/52 ,  H01L35/00 ,  H01L35/18 ,  H01L35/32

Abstract: Thermoelektrisches Element mit: – einem mikroelektronischen Chip mit zumindest einem Bereich mit einer größeren Wärmeableitungsrate als der Rest des mikroelektronischen Chips, wenn er in Betrieb ist; – einer ersten Elektrode nahe dem mikroelektronischen Chip einschließlich dem Bereich größerer Wärme; – einem dielektrischen Material nahe der ersten Elektrode; – einer zweiten Elektrode gegenüberliegend der ersten Elektrode mit dem dielektrischen Material dazwischen angeordnet; und – einer Mehrzahl von sich zwischen der ersten Elektrode und der zweiten Elektrode erstreckenden Nano-Drähten, wobei die Nano-Drähte nahe dem zumindest einen Bereich mit größerer Wärmeableitungsrate eine höhere Dichte aufweisen, eine niedrigere Dichte, welche die höhere Dichte umgibt, nahe einem Zwischenbereich zwischen dem Bereich großer Wärmeableitungsrate und dem Rest des mikroelektronischen Chips aufweisen, eine weitere niedrige Dichte, welche die niedrigere Dichte umgibt, aufweisen, und keine Nano-Drähte nahe dem Rest des mikroelektronischen Chips vorhanden sind, wobei die höhere Dichte, die niedrigere Dichte und die weitere niedrigere Dichte von Nano-Drähten konzentrische Ovale bilden.

公开(公告)号：WO2005119800A3

公开(公告)日：2006-03-23

申请号：PCT/US2005014970

申请日：2005-04-29

Applicant: INTEL CORP ,  RAMANATHAN SHRIRAM ,  CHRYSLER GREGORY

Inventor： RAMANATHAN SHRIRAM ,  CHRYSLER GREGORY

IPC: H01L35/30 ,  F25B21/02 ,  H01L23/38 ,  H01L23/52 ,  H01L35/00 ,  H01L35/18 ,  H01L35/32

CPC classification number: H01L35/30 ,  H01L23/38 ,  H01L35/18 ,  H01L35/32 ,  H01L2224/16225 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/01079

Abstract: Apparatus and method of fabricating a heat dissipation device that includes at least one thermoelectric device fabricated with nano-wires for drawing heat from at least one high heat area on a microelectronic die. The nano-wires may be formed from bismuth containing materials and may be clustered of optimal performance.

Abstract translation: 一种制造散热装置的装置和方法，其包括至少一个用纳米线制造的热电装置，用于从微电子管芯上的至少一个高加热区域吸取热量。 纳米线可以由含铋材料形成，并且可以聚集成最佳性能。

公开(公告)号：WO2008094287A3

公开(公告)日：2008-12-04

申请号：PCT/US2007072424

申请日：2007-06-28

Applicant: INTEL CORP ,  DATTA SUMAN ,  RAMANATHAN SHRIRAM ,  KAVALIEROS JACK T ,  BRASK JUSTIN K ,  BARNETT BRANDON

Inventor： DATTA SUMAN ,  RAMANATHAN SHRIRAM ,  KAVALIEROS JACK T ,  BRASK JUSTIN K ,  BARNETT BRANDON

IPC: H01L21/20 ,  H01L21/336

CPC classification number: G01N27/4145 ,  G01N27/4146 ,  Y10T436/143333

Abstract: The embodiments of the invention relate to a device having a first substrate comprising a transistor; a second substrate; an insulating layer in between and adjoining the first and second substrates; and an opening within the second substrate, the opening being aligned with the transistor; wherein the transistor is configured to detect an electrical charge change within the opening. Other embodiments relate to a method including providing a substrate comprising a first part, a second part, and an insulating layer in between and adjoining the first and second parts; fabricating a transistor on the first part; and fabricating an opening within the second part, the opening being aligned with the transistor; wherein the transistor is configured to detect an electrical charge change within the opening.

Abstract translation: 本发明的实施例涉及具有包括晶体管的第一衬底的器件; 第二基板; 位于第一和第二基板之间并邻接第一和第二基板的绝缘层; 以及在所述第二基板内的开口，所述开口与所述晶体管对准; 其中所述晶体管被配置为检测所述开口内的电荷变化。 其他实施例涉及一种方法，包括提供包括第一部分，第二部分和绝缘层的基板，并且邻近第一和第二部分; 在第一部分制造晶体管; 以及在所述第二部分内制造开口，所述开口与所述晶体管对准; 其中所述晶体管被配置为检测所述开口内的电荷变化。

公开(公告)号：HK1099129A1

公开(公告)日：2007-08-03

申请号：HK07106585

申请日：2007-06-20

Applicant: INTEL CORP

Inventor： RAMANATHAN SHRIRAM ,  KIM SARAH ,  LIST RICHARD SCOTT ,  CHRYSLER GREGORY

IPC: H01L20090101 ,  H01L21/60 ,  H01L23/38 ,  H01L23/485 ,  H01L23/50 ,  H01L27/16 ,  H01L35/32

Abstract: A microelectronic assembly is provided, having thermoelectric elements formed on a die so as to pump heat away from the die when current flows through the thermoelectric elements. In one embodiment, the thermoelectric elements are integrated between conductive interconnection elements on an active side of the die. In another embodiment, the thermoelectric elements are on a backside of the die and electrically connected to a carrier substrate on a front side of the die. In a further embodiment, the thermoelectric elements are formed on a secondary substrate and transferred to the die.

公开(公告)号：DE112005001094T5

公开(公告)日：2007-04-26

申请号：DE112005001094

申请日：2005-04-29

Applicant: INTEL CORP

Inventor： RAMANATHAN SHRIRAM ,  CHRYSLER GREGORY

IPC: H01L35/00 ,  F25B21/02 ,  H01L23/38 ,  H01L23/52 ,  H01L35/18 ,  H01L35/30 ,  H01L35/32

Abstract: Apparatus and method of fabricating a heat dissipation device that includes at least one thermoelectric device fabricated with nano-wires for drawing heat from at least one high heat area on a microelectronic die. The nano-wires may be formed from bismuth containing materials and may be clustered of optimal performance.

公开(公告)号：WO2007078889A3

公开(公告)日：2008-04-10

申请号：PCT/US2006048053

申请日：2006-12-14

Applicant: INTEL CORP ,  PARK CHANG-MIN ,  RAMANATHAN SHRIRAM

Inventor： PARK CHANG-MIN ,  RAMANATHAN SHRIRAM

IPC: G01R33/032 ,  G01R33/26

CPC classification number: G01R33/032 ,  B82Y30/00 ,  G01R33/0322 ,  G01R33/24

Abstract: An embodiment of the invention relates to a device comprising an array of optical magnetometers. The magnetometers comprise a light source, a container having a chamber filled with an atomic vapor, and a photo detector capable of detecting optical properties of the atomic vapor. The substrate and the array of the magnetometers are designed such that the magnetometers are able to detect weak magnetic fields. Also, the magnetometers are capable of detecting distinct portions of a magnetic field, such as a non-uniform magnetic field, using a single or a plurality of the magnetometers in the array simultaneously. Other embodiments of the invention include methods of making a device that comprises an array of optical magnetometers and methods of detecting a magnetic field using the device. The device and method can be used in medical diagnostics, such as detecting biomagnetic activities of the human's heart and brain.

Abstract translation: 本发明的实施例涉及一种包括光学磁力计阵列的装置。 磁力计包括光源，具有填充有原子蒸汽的室的容器和能够检测原子蒸气的光学特性的光电检测器。 磁性计的基板和阵列被设计成使得磁力计能够检测弱磁场。 此外，磁力计能够同时使用阵列中的单个或多个磁力计来检测磁场的不同部分，例如不均匀的磁场。 本发明的其它实施例包括制造包括光学磁力计阵列的装置的方法和使用该装置检测磁场的方法。 该装置和方法可用于医学诊断，例如检测人类心脏和脑的生物磁性活动。

公开(公告)号：WO2007050754A2

公开(公告)日：2007-05-03

申请号：PCT/US2006041779

申请日：2006-10-24

Applicant: INTEL CORP ,  BASKARAN RAJASHREE ,  RAMANATHAN SHRIRAM ,  MORROW PATRICK

Inventor： BASKARAN RAJASHREE ,  RAMANATHAN SHRIRAM ,  MORROW PATRICK

IPC: H01L23/367 ,  H01L21/768 ,  H01L23/48 ,  H01L25/065

CPC classification number: H01L21/76898 ,  H01L23/3677 ,  H01L23/3735 ,  H01L23/481 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/06181 ,  H01L2224/13 ,  H01L2224/13023 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/14181 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73253 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2924/00

Abstract: Some embodiments of the present invention include apparatuses and methods relating to stacked wafer or die packaging with enhanced thermal and device performance.

Abstract translation: 本发明的一些实施例包括与具有增强的热和器件性能的堆叠晶片或管芯封装相关的装置和方法。

公开(公告)号：WO2005036642A2

公开(公告)日：2005-04-21

申请号：PCT/US2004032947

申请日：2004-10-06

Applicant: INTEL CORP ,  RAMANATHAN SHRIRAM ,  KIM SARAH ,  LIST RICHARD SCOTT ,  CHRYSLER GREGORY

Inventor： RAMANATHAN SHRIRAM ,  KIM SARAH ,  LIST RICHARD SCOTT ,  CHRYSLER GREGORY

IPC: H01L21/60 ,  H01L23/38 ,  H01L23/485 ,  H01L23/50 ,  H01L27/16 ,  H01L35/32 ,  H01L23/00

CPC classification number: H01L35/32 ,  H01L23/38 ,  H01L23/50 ,  H01L24/11 ,  H01L24/13 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L27/16 ,  H01L2224/05001 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48471 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/81801 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/4554

Abstract: A microelectronic assembly is provided, having thermoelectric elements formed on a die so as to pump heat away from the die when current flows through the thermoelectric elements. In one embodiment, the thermoelectric elements are integrated between conductive interconnection elements on an active side of the die. In another embodiment, the thermoelectric elements are on a backside of the die and electrically connected to a carrier substrate on a front side of the die. In a further embodiment, the thermoelectric elements are formed on a secondary substrate and transferred to the die.