公开(公告)号：DE69835238T2

公开(公告)日：2007-05-31

申请号：DE69835238

申请日：1998-04-13

Applicant: INTEL CORP

Inventor： RAO R

IPC: H01L27/15 ,  H01S3/098 ,  G02B6/43 ,  G06F1/10 ,  H01L20060101 ,  H01L31/12 ,  H01L31/153 ,  H01L31/167 ,  H01L33/00 ,  H01S3/10

公开(公告)号：DE69927387D1

公开(公告)日：2006-02-02

申请号：DE69927387

申请日：1999-07-26

Applicant: INTEL CORP

Inventor： PANICCIA I ,  RAO R ,  YEE MUN

IPC: G01R1/06 ,  G01N21/41 ,  G01R19/00 ,  G01R31/28 ,  G01R31/302 ,  G01R31/311

Abstract: A method and an apparatus for detecting an electric field in the active regions of an integrated circuit disposed in a semiconductor. In one embodiment, a laser beam is operated at a wavelength greater than approximately 0.9 mu m. The laser beam is focused onto a P-N junction, such as for example the drain of a MOS transistor, through the back side of the semiconductor substrate. As a result of free carrier absorption, the laser beam is partially absorbed near the P-N junction. When a signal is impressed on the P-N junction, the degree of free carrier absorption will be modulated in accordance with the modulation of the depletion region near the P-N junction. The laser beam passes through the P-N junction region, reflects off the oxide interface and metal behind the junction, and returns back through the P-N junction and back out of the silicon surface. Amplitude modulation in this reflected laser beam is detected with an optical detection system.

公开(公告)号：DE60123659D1

公开(公告)日：2006-11-16

申请号：DE60123659

申请日：2001-11-26

Applicant: INTEL CORP

Inventor： MA QING ,  RAO R ,  CHENG PENG

IPC: H01G5/16 ,  H01G5/38 ,  B81B3/00 ,  H01G5/00 ,  H01L21/20

Abstract: The present invention relates to a stepped micro electromechanical structure (MEMS) capacitor that is actuated by a plurality of MEMS switches. The MEMS switches may be within the stepped capacitor circuit, or they may be actuated by an independent circuit. The stepped capacitor may also be varied with intermediate steps of capacitance by providing at least one variable capacitor in the stepped MEMS capacitor structure.

公开(公告)号：DE69835238D1

公开(公告)日：2006-08-24

申请号：DE69835238

申请日：1998-04-13

Applicant: INTEL CORP

Inventor： RAO R

IPC: H01L27/15 ,  H01S3/098 ,  G02B6/43 ,  G06F1/10 ,  H01L20060101 ,  H01L31/12 ,  H01L31/153 ,  H01L31/167 ,  H01L33/00 ,  H01S3/10

公开(公告)号：DE60123659T2

公开(公告)日：2007-08-16

申请号：DE60123659

申请日：2001-11-26

Applicant: INTEL CORP

Inventor： MA QING ,  RAO R ,  CHENG PENG

IPC: H01G5/16 ,  H01G5/38 ,  B81B3/00 ,  H01G5/00 ,  H01L21/20

Abstract: The present invention relates to a stepped micro electromechanical structure (MEMS) capacitor that is actuated by a plurality of MEMS switches. The MEMS switches may be within the stepped capacitor circuit, or they may be actuated by an independent circuit. The stepped capacitor may also be varied with intermediate steps of capacitance by providing at least one variable capacitor in the stepped MEMS capacitor structure.

公开(公告)号：DE69927387T2

公开(公告)日：2006-07-06

申请号：DE69927387

申请日：1999-07-26

Applicant: INTEL CORP

Inventor： PANICCIA I ,  RAO R ,  YEE MUN

IPC: G01R1/06 ,  G01R31/28 ,  G01N21/41 ,  G01R19/00 ,  G01R31/302 ,  G01R31/311

Abstract: A method and an apparatus for detecting an electric field in the active regions of an integrated circuit disposed in a semiconductor. In one embodiment, a laser beam is operated at a wavelength greater than approximately 0.9 mu m. The laser beam is focused onto a P-N junction, such as for example the drain of a MOS transistor, through the back side of the semiconductor substrate. As a result of free carrier absorption, the laser beam is partially absorbed near the P-N junction. When a signal is impressed on the P-N junction, the degree of free carrier absorption will be modulated in accordance with the modulation of the depletion region near the P-N junction. The laser beam passes through the P-N junction region, reflects off the oxide interface and metal behind the junction, and returns back through the P-N junction and back out of the silicon surface. Amplitude modulation in this reflected laser beam is detected with an optical detection system.