公开(公告)号：JP2004047993A

公开(公告)日：2004-02-12

申请号：JP2003173074

申请日：2003-06-18

Applicant: Intel Corp ,  インテル コーポレイション

Inventor： MA QING ,  CHOU TSUNG-KUAN ALLEN

IPC: B81C1/00 ,  B81B7/00 ,  B81B7/02 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L23/66 ,  H01L27/04

CPC classification number: H01L23/66 ,  B81B7/0006 ,  H01L23/5221 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a better method for connection in an MEMS device.
SOLUTION: The method comprises a step for forming a pair of first and second conductive strips (earthing wires 12a) separated from each other by a gap in a first conductive layer (bottom conductive layer 12); a step for forming a conductor (control voltage line 18) extending through the gap 22 in the first conductive layer; and a step for forming a conductive bridge 16e electrically connecting the first and second conductive strips to each other while being insulated from the conductor 18 in a second conductive layer (top conductive layer).
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2015043438A

公开(公告)日：2015-03-05

申请号：JP2014192658

申请日：2014-09-22

Applicant: インテル コーポレイション ,  Intel Corp ,  インテル コーポレイション

Inventor： MA QING ,  HU CHUAN ,  PATRICK MORROW

IPC: H01L23/15 ,  H01L21/768 ,  H01L23/12 ,  H05K3/46

CPC classification number: H01L23/49822 ,  B32B2457/08 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/3675 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16227 ,  H01L2224/32245 ,  H01L2224/73253 ,  H01L2224/81815 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/05442 ,  H01L2924/14 ,  H01L2924/15184 ,  H01L2924/15788 ,  H01L2924/16251 ,  H05K3/42 ,  H05K3/4605 ,  H05K2201/0195 ,  H05K2201/096 ,  Y10T156/10 ,  H01L2924/00

Abstract: 【課題】集積回路(IC)デバイス用の基板の実施形態が開示される。【解決手段】基板は、ともに接合された2つ以上の別々のガラス層を有するコアを含む。隣接し合うガラス層の間に、これらの層をともに結合する別個の接合層が配設され得る。基板はまた、多層ガラスコアの両面に、あるいは場合により該コアの片面のみに、ビルドアップ構造を含み得る。基板の両面に導電端子が形成され得る。基板の一方の面の端子にICダイが結合され得る。反対側の面の端子は、例えば回路基板などの次階層の部品と結合され得る。1つ以上の導電体が多層ガラスコアを貫いて延在し、これら導電体のうちの1つ以上が、コア上に配置されたビルドアップ構造と電気的に結合され得る。その他の実施形態も開示される。【選択図】図1B

Abstract translation: 要解决的问题：提供一种用于集成电路（IC）器件的衬底。解决方案：衬底包括具有两个或更多个离散的玻璃层的芯子，所述两个或多个离散的玻璃层结合在一起。 可以在相邻的玻璃层之间设置单独的粘合层，以将这些层连接在一起。 衬底还可以包括在多层玻璃芯的相对侧上或者可能在芯的一侧上的堆积结构。 导电端子可以形成在基板的两侧，并且IC管芯可以与基板的一侧上的端子耦合。 相对侧上的端子可以与诸如电路板的下一级组件耦合。 一个或多个导体延伸通过多层玻璃芯，并且一个或多个导体可以与布置在芯上的积聚结构电耦合。 描述和要求保护其他实施例。

公开(公告)号：JP2010063142A

公开(公告)日：2010-03-18

申请号：JP2009254140

申请日：2009-11-05

Applicant: Intel Corp ,  インテル コーポレイション

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H3/02 ,  H03H9/24 ,  H01L41/09 ,  H01L41/22 ,  H03H9/17 ,  H03H9/54 ,  H03H9/56

CPC classification number: H03H9/564 ,  H03H3/02 ,  Y10T29/42

Abstract: PROBLEM TO BE SOLVED: To provide a better method of forming a thin-film bulk acoustic resonator filter. SOLUTION: In the method of manufacturing a thin-film bulk acoustic resonator filer, a thin-film bulk acoustic resonator filter 10 includes a plurality of thin-film bulk acoustic resonators 38a to 38g series-connected and branched on the same film 35. The thin-film bulk acoustic resonators 38a to 38g are made of a single common lower conductive layer to have respective bottom electrodes of the thin-film bulk acoustic resonators. The single common conductive layer is provided to form respective upper electrodes of the thin-film bulk acoustic resonators 38a to 38g. A common piezoelectric thin-film layer, which may or may not be patterned, is formed as a thin film continuous as a single or not continuous. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种更好的形成薄膜体声波谐振器滤波器的方法。 解决方案：在制造薄膜体声波谐振器滤波器的方法中，薄膜体声波谐振器滤波器10包括在相同的膜上串联和分支的多个薄膜体声波谐振器38a至38g 薄膜体声共振器38a至38g由单个公共下导电层制成，以具有薄膜体声波谐振器的相应底部电极。 提供单个公共导电层以形成薄膜体声波谐振器38a至38g的相应上电极。 可以或可以不被图案化的公共压电薄膜层作为单独的或不连续的连续的薄膜形成。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2011150696A

公开(公告)日：2011-08-04

申请号：JP2010284783

申请日：2010-12-21

Applicant: Intel Corp ,  インテル コーポレイション

Inventor： MA QING ,  NAEIMI HELIA

IPC: G06F1/26 ,  B06B1/06 ,  H01L41/09

CPC classification number: F03G7/08 ,  H02K35/02 ,  H02N2/186

Abstract: PROBLEM TO BE SOLVED: To perform energy harvesting in the platform of a portable computer. SOLUTION: A mass body, such as a mother board 102 already existing in the platform of the portable computer, is used, thereby to allow a device, for performing conversion into electric energy by using vibration energy to be added to the mass body, to be incorporated in the portable computer. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：在便携式计算机的平台中执行能量收集。 解决方案：使用已经存在于便携式计算机的平台中的诸如母板102的质量体，从而允许通过使用要添加到质量块中的振动能量来转换为电能的装置 身体，被并入便携式计算机。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010263781A

公开(公告)日：2010-11-18

申请号：JP2010104750

申请日：2010-04-30

Applicant: Intel Corp ,  インテル コーポレイション

Inventor： NAEIMI HELIA ,  MA QING

IPC: H02J7/00 ,  H01M10/44 ,  H02K21/26

CPC classification number: H02K7/1861 ,  H02J7/32 ,  H02K7/1853 ,  H02N2/18 ,  Y02B40/90

Abstract: PROBLEM TO BE SOLVED: To provide a mobile computing apparatus having an ambient energy harvesting capability. SOLUTION: When the apparatus is manually operated, the apparatus converts a part of motion of a user's hand added to a controller of the apparatus into electrical energy. The energy powers the apparatus and is used to charge a battery of the apparatus. The apparatus has an electrical power storage apparatus provided in a housing, a display screen attached to the housing to display a plurality of user-interactive interfaces and a manually operable input controller which is capable of interacting with the interfaces and is coupled to an energy converter in the housing to charge the power storage apparatus when the apparatus is operated. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供具有环境能量收集能力的移动计算设备。 解决方案：当手动操作设备时，该设备将添加到设备的控制器的用户手的一部分运动转换为电能。 能量为设备供电，并用于为设备的电池充电。 该装置具有设置在壳体中的电力存储装置，附接到壳体以显示多个用户交互界面的显示屏幕和能够与界面交互并且耦合到能量转换器的手动可操作的输入控制器 在所述外壳中对所述设备进行操作时对所述蓄电装置进行充电。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2004072778A

公开(公告)日：2004-03-04

申请号：JP2003289608

申请日：2003-08-08

Applicant: Intel Corp ,  インテル コーポレイション

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56

CPC classification number: H03H9/564 ,  H03H3/02 ,  Y10T29/42

Abstract: PROBLEM TO BE SOLVED: To provide a better method for forming a thin film bulk acoustic resonator filter. SOLUTION: The film bulk acoustic resonator filter 10 is formed of a plurality of interconnected series and shunt film bulk acoustic resonators 38 formed on the same membrane 35. Each of the film bulk acoustic resonator 38 is formed of one common lower conductive layer which is defined to form a bottom electrode 32 of the film bulk acoustic resonator 38. The one common conductive layer is defined to form a top electrode 36 of each of the film bulk acoustic resonator 38. One common piezoelectric film layer 34 which may or may not be not patterned forms one continuous or discontinuous film. COPYRIGHT: (C)2004,JPO

公开(公告)号：WO2004017351A3

公开(公告)日：2004-07-29

申请号：PCT/US0325632

申请日：2003-08-13

Applicant: INTEL CORP

Inventor： MA QING

IPC: B81B3/00 ,  H01H1/00 ,  H01H37/54 ,  H01H61/00 ,  H01H61/01

CPC classification number: H01H1/0036 ,  H01H37/5409 ,  H01H2001/0042 ,  H01H2037/008

Abstract: A microelectromechanical system (MEMS) that includes a first electro-thermal actuator, a second electro-thermal actuator and a beam having a first side and a second side. The first electro-thermal actuator applies a force to the first side of the beam as current passes through the first electro-thermal actuator and the second electro-thermal actuator applies a force to the second side of the beam as current passes through the second electro-thermal actuator.

Abstract translation: 一种微机电系统（MEMS），其包括第一电热致动器，第二电热致动器和具有第一侧和第二侧的梁。 当电流通过第一电热致动器时，第一电热致动器向梁的第一侧施加力，并且当电流通过第二电热致动器时，第二电热致动器向梁的第二侧施加力 热致动器。

公开(公告)号：WO2004036744A3

公开(公告)日：2004-07-22

申请号：PCT/US0324142

申请日：2003-08-01

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H9/205

CPC classification number: H03H9/564 ,  H03H3/02 ,  Y10T29/42

Abstract: A film bulk acoustic resonator filter may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators formed on the same membrane. Each of the film bulk acoustic resonators may be formed from a common lower conductive layer which is defined to form the bottom electrode of each film bulk acoustic resonator. A common top conductive layer may be defined to form each top electrode of each film bulk acoustic resonator. A common piezoelectric film layer, that may or may not be patterned, forms a continuous or discontinuous film.

Abstract translation: 薄膜体声波谐振器滤波器可以形成有在相同膜上形成的多个互连的串联和分流膜体声波谐振器。 每个薄膜体声波谐振器可以由共同的下导电层形成，该下导电层被限定为形成每个薄膜体声波谐振器的下电极。 可以限定公共顶部导电层以形成每个薄膜体声波谐振器的每个顶部电极。 常见的压电薄膜层可以或不可以被图案化，形成连续或不连续的薄膜。

公开(公告)号：WO03028212A3

公开(公告)日：2003-05-15

申请号：PCT/US0231157

申请日：2002-09-27

Applicant: INTEL CORP

Inventor： CHENG PENG ,  MA QING

IPC: B81B3/00 ,  H03H3/007 ,  H03H9/24 ,  H03H3/013

CPC classification number: B81B3/0078 ,  B81B2201/016 ,  B81B2203/019 ,  H03H3/0077 ,  H03H9/2463

Abstract: A micro-electromechanical (MEM) resonator is described that includes a substrate, a microbridge beam structure coupled to the substrate and at least one electrode disposed adjacent to the microbridge beam structure to induce vibration of the beam. The microbridge beam structure includes support sections and a beam formed between the support sections. The center region of the beam has a mass that is less than the mass of regions of the beam adjacent to the support sections.

Abstract translation: 描述了一种微机电（MEM）谐振器，其包括衬底，耦合到衬底的微桥梁结构和邻近微桥梁结构设置的至少一个电极以引起梁的振动。 微桥梁结构包括支撑部分和形成在支撑部分之间的梁。 梁的中心区域的质量小于与支撑部分相邻的梁的区域的质量。

公开(公告)号：WO2007002547A2

公开(公告)日：2007-01-04

申请号：PCT/US2006024722

申请日：2006-06-22

Applicant: INTEL CORP ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  CHOU TSUNG-KUAN ,  ALTSHULER SEMEON ,  WEINFELD BOAZ

Inventor： HECK JOHN ,  MA QING ,  TRAN QUAN ,  CHOU TSUNG-KUAN ,  ALTSHULER SEMEON ,  WEINFELD BOAZ

IPC: H01L21/768 ,  H01L23/48

CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An apparatus and method of fabricating a through-wafer via. A first mask is formed over a first side of a first semiconductor die to define a first via area. A deep recess is etched through the first semiconductor die in the first via area and a blanket metal layer is formed over the first side including the deep recess. The blanket metal layer is removed from an outer surface of the first side of the first semiconductor die while retaining a portion of the blanket metal layer within the deep recess.

Abstract translation: 一种制造通晶片通孔的装置和方法。 第一掩模形成在第一半导体管芯的第一侧上以限定第一通孔区域。 通过第一通孔区域中的第一半导体管芯蚀刻深的凹部，并且在包括深凹部的第一侧上形成覆盖金属层。 将橡皮布金属层从第一半导体管芯的第一侧的外表面移除，同时将橡皮布金属层的一部分保持在深凹部内。