公开(公告)号：AU5216699A

公开(公告)日：2000-02-28

申请号：AU5216699

申请日：1999-07-26

Applicant: INTEL CORP

Inventor： PANICCIA MARIO I ,  RAO VALLURI R M ,  YEE WAI MUN

IPC: G01R1/06 ,  G01N21/41 ,  G01R19/00 ,  G01R31/302 ,  G01R31/311 ,  G01R31/28

Abstract: A method and an apparatus for detecting an electric field in the active regions of an integrated circuit disposed in a semiconductor. In one embodiment, a laser beam is operated at a wavelength greater than approximately 0.9 mu m. The laser beam is focused onto a P-N junction, such as for example the drain of a MOS transistor, through the back side of the semiconductor substrate. As a result of free carrier absorption, the laser beam is partially absorbed near the P-N junction. When a signal is impressed on the P-N junction, the degree of free carrier absorption will be modulated in accordance with the modulation of the depletion region near the P-N junction. The laser beam passes through the P-N junction region, reflects off the oxide interface and metal behind the junction, and returns back through the P-N junction and back out of the silicon surface. Amplitude modulation in this reflected laser beam is detected with an optical detection system.

公开(公告)号：AU7262798A

公开(公告)日：1999-07-12

申请号：AU7262798

申请日：1998-04-27

Applicant: INTEL CORP

Inventor： PANICCIA MARIO J ,  RAO VALLURI R M

IPC: G02B6/43 ,  G02B6/12

Abstract: A method and an apparatus providing optical input/output in an integrated circuit. In one embodiment, optical modulators and demodulators, which are coupled to integrated circuit input/output nodes, are disposed on or within the back side semiconductor substrate of a flip chip packaged integrated circuit. Since a flip chip packaged integrated circuit die is utilized, full access to the optical modulators and demodulators is provided from the back side of the integrated circuit die for optical input/output. In one embodiment, a heat sink including a light source and an optical assembly is thermally and optically coupled to the back side of the integrated circuit die. A light beam is directed to the optical modulators and the deflected modulated light beam is routed and directed to the optical demodulators to realize optical input/output. In one embodiment, infrared light may be utilized such that the optical modulators and demodulators are disposed within a silicon semiconductor substrate. Since silicon is partially transparent to infrared light, optical input/output is realized through the back side and through the semiconductor substrate of the flip chip packaged integrated circuit die.

公开(公告)号：EP1102999A4

公开(公告)日：2002-10-09

申请号：EP99937303

申请日：1999-07-26

Applicant: INTEL CORP

Inventor： PANICCIA MARIO I ,  RAO VALLURI R M ,  YEE WAI MUN

IPC: G01R1/06 ,  G01N21/41 ,  G01R19/00 ,  G01R31/302 ,  G01R31/311 ,  G01R31/28

CPC classification number: G01R31/311

Abstract: A method and an apparatus for detecting an electric field in the active regions (403) of an integrated circuit (405) disposed in a semiconductor. In one embodiment, a laser beam (407) is operated at a wavelength greater than approximately 0.9 microns. The laser beam is focused onto a P-N junction, such as for example the drain of a MOS transistor, through the back side of the semiconductor substrate. As a result of free carrier absorption, the laser beam is partially absorbed near the P-N junction. When a signal is impressed on the P-N junction, the degree of free carrier absorption will be modulated in accordance with the modulation of the depletion region near the P-N junction. The laser beam passes through the P-N junction region, reflects off the oxide interface and the metal behind the junction, and returns back through the P-N junction and back out of the silicon surface. Amplitude modulation in this reflected laser beam is detected with an optical detection system.