公开(公告)号：WO2008097330A2

公开(公告)日：2008-08-14

申请号：PCT/US2007072055

申请日：2007-06-25

Applicant: INTEL CORP ,  UNIV CALIFORNIA ,  BOWERS JOHN E ,  COHEN ODED ,  FANG ALEXANDER W ,  JONES RICHARD ,  PANICCIA MARIO J ,  PARK HYUNDAI

Inventor： BOWERS JOHN E ,  COHEN ODED ,  FANG ALEXANDER W ,  JONES RICHARD ,  PANICCIA MARIO J ,  PARK HYUNDAI

CPC classification number: H01S5/30 ,  G02B2006/12121 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/1032 ,  H01S5/125 ,  H01S5/141 ,  H01S5/2214 ,  H01S5/223 ,  H01S5/34

Abstract: An apparatus and method electrically pumping a hybrid evanescent laser. For one example, an apparatus includes an optical waveguide disposed in silicon. An active semiconductor material is disposed over the optical waveguide defining an evanescent coupling interface between the optical waveguide and the active semiconductor material such that an optical mode to be guided by the optical waveguide overlaps both the optical waveguide and the active semiconductor material. A current injection path is defined through the active semiconductor material and at least partially overlapping the optical mode such that light is generated in response to electrical pumping of the active semiconductor material in response to current injection along the current injection path at least partially overlapping the optical mode.

Abstract translation: 电泵浦混合渐逝激光的设备和方法。 例如，一种设备包括设置在硅中的光波导。 有源半导体材料设置在光波导上方，在光波导和有源半导体材料之间限定渐逝耦合界面，使得由光波导引导的光学模式与光波导和有源半导体材料两者重叠。 电流注入路径被限定为穿过有源半导体材料并且至少部分地与光学模式重叠，使得响应于沿着电流注入路径的电流注入响应于有源半导体材料的电泵浦而生成光，所述电流注入路径至少部分地与光学 模式。

公开(公告)号：WO2012009149A3

公开(公告)日：2012-04-05

申请号：PCT/US2011041978

申请日：2011-06-27

Applicant: INTEL CORP ,  HECK JOHN ,  LIU ANSHENG ,  PANICCIA MARIO J

Inventor： HECK JOHN ,  LIU ANSHENG ,  PANICCIA MARIO J

IPC: G02B6/12

CPC classification number: G02B6/4214 ,  G02B6/422

Abstract: Techniques and architectures for providing a reflective target area of an integrated circuit die assembly. In an embodiment, a reflective bevel surface of a die allows an optical signal to be received from the direction of a side surface of a die assembly for reflection into a photodetector. In another embodiment, one or more grooves in a coupling surface of the die provide respective leverage points for aligning a target area of the bevel surface with a detecting surface of the photodetector.

Abstract translation: 用于提供集成电路管芯组件的反射目标区域的技术和架构。 在一个实施例中，管芯的反射斜面允许从模组件的侧表面的方向接收光信号以反射到光电探测器中。 在另一个实施例中，管芯耦合表面中的一个或多个凹槽提供相应的杠杆作用点，以将斜面表面的目标区域与光电探测器的探测表面对准。

公开(公告)号：AU7262798A

公开(公告)日：1999-07-12

申请号：AU7262798

申请日：1998-04-27

Applicant: INTEL CORP

Inventor： PANICCIA MARIO J ,  RAO VALLURI R M

IPC: G02B6/43 ,  G02B6/12

Abstract: A method and an apparatus providing optical input/output in an integrated circuit. In one embodiment, optical modulators and demodulators, which are coupled to integrated circuit input/output nodes, are disposed on or within the back side semiconductor substrate of a flip chip packaged integrated circuit. Since a flip chip packaged integrated circuit die is utilized, full access to the optical modulators and demodulators is provided from the back side of the integrated circuit die for optical input/output. In one embodiment, a heat sink including a light source and an optical assembly is thermally and optically coupled to the back side of the integrated circuit die. A light beam is directed to the optical modulators and the deflected modulated light beam is routed and directed to the optical demodulators to realize optical input/output. In one embodiment, infrared light may be utilized such that the optical modulators and demodulators are disposed within a silicon semiconductor substrate. Since silicon is partially transparent to infrared light, optical input/output is realized through the back side and through the semiconductor substrate of the flip chip packaged integrated circuit die.

公开(公告)号：AU6971898A

公开(公告)日：1998-12-08

申请号：AU6971898

申请日：1998-04-14

Applicant: INTEL CORP

Inventor： WINER PAUL ,  PANICCIA MARIO J ,  MA KARL J

IPC: G01R31/26 ,  H01L23/467 ,  H01L23/473 ,  H01L23/34

Abstract: A method and an apparatus for cooling a semiconductor die. In one embodiment, a C4 packaged semiconductor die is thermally coupled to a cooling plate having an opening. The opening of the cooling plate is disposed over a back side surface of the semiconductor die such that direct unobstructed access to the exposed back side surface of the semiconductor die is provided. A conformable thermal conductor, such as indium, is disposed between the semiconductor die and the cooling plate to improve the thermal coupling between the semiconductor and cooling plate. In one embodiment, the semiconductor die is mounted on a circuit board and a cooling block is disposed on the opposite side of the circuit board. The cooling plate is thermally coupled to the cooling block with heat transfer conduits, such as thermal screws, that extend through the circuit board to transfer the heat from the semiconductor die through the cooling plate through the heat transfer conduits to the cooling block located on the opposite side of the circuit board. In one embodiment, coolant is circulated through the cooling block to remove heat from the cooling block.

公开(公告)号：WO2012044618A2

公开(公告)日：2012-04-05

申请号：PCT/US2011053470

申请日：2011-09-27

Applicant: INTEL CORP ,  RONG HAISHENG ,  HSIEH I-WEI ANDY ,  PANICCIA MARIO J

Inventor： RONG HAISHENG ,  HSIEH I-WEI ANDY ,  PANICCIA MARIO J

IPC: G01J3/00 ,  G01J3/02

CPC classification number: H01L22/14 ,  H01L22/34

Abstract: Instead of monitoring the optical power coming out of a waveguide, a direct method of monitoring the optical power inside the waveguide without affecting device or system performance is provided. A waveguide comprises a p-i-n structure which induces a TPA-generated current and may be enhanced with reverse biasing the diode. The TPA current may be measured directly by probing metal contacts provided on the top surface of the waveguide, and may enable wafer-level testing. The p-i-n structures may be implemented at desired points throughout an integrated network, and thus allows probing of different devices for in-situ power monitor and failure analysis.

Abstract translation: 提供了监视波导中的光功率而不是监视波导内的光功率而不影响设备或系统性能的直接方法。 波导包括p-i-n结构，其诱导TPA产生的电流并且可以通过反向偏置二极管来增强。 可以通过探测设置在波导顶表面上的金属触点直接测量TPA电流，并且可以实现晶片级测试。 p-i-n结构可以在整个集成网络中的所需点处实现，并且因此允许探测用于原位功率监测和故障分析的不同设备。

公开(公告)号：WO2008005721A2

公开(公告)日：2008-01-10

申请号：PCT/US2007071952

申请日：2007-06-22

Applicant: INTEL CORP ,  LIU ANSHENG ,  PANICCIA MARIO J ,  JONES RICHARD

Inventor： LIU ANSHENG ,  PANICCIA MARIO J ,  JONES RICHARD

CPC classification number: G02B6/12019 ,  G02B6/12004 ,  G02F1/2257 ,  H01S5/021 ,  H01S5/02248 ,  H01S5/1032 ,  H01S5/141 ,  H01S5/4087

Abstract: An apparatus and method providing a plurality of modulated optical beams from a single layer of semiconductor material. For one example, an apparatus includes a plurality of optical waveguides disposed in a single layer of semiconductor material. Each one of the plurality of optical waveguides includes an optical cavity defined along the optical waveguide. A single bar of gain medium material adjoining the single layer of semiconductor material across the plurality of optical waveguides is included. The gain medium-semiconductor material interface is defined along each of the plurality of optical waveguides. A plurality of optical modulators is disposed in the single layer of semiconductor material. Each one of the plurality of optical modulators is optically coupled to a respective one of the plurality of optical waveguides to modulate a respective optical beam directed from the optical cavity.

Abstract translation: 一种从单层半导体材料提供多个调制光束的装置和方法。 作为一个示例，设备包括设置在单层半导体材料中的多个光波导。 多个光波导中的每一个包括沿着光波导限定的光学腔。 包括与多个光波导相邻的单层半导体材料的单条增益介质材料。 沿着多个光波导中的每一个限定增益介质半导体材料界面。 多个光学调制器设置在单层半导体材料中。 多个光学调制器中的每一个光学耦合到多个光波导中的相应的一个光波导，以调制从光腔指向的相应光束。

公开(公告)号：CA2389067C

公开(公告)日：2006-04-11

申请号：CA2389067

申请日：2000-10-18

Applicant: INTEL CORP

Inventor： PANICCIA MARIO J ,  NIKONOV DMITRI ,  KOEHL SEAN M

IPC: G02F1/015 ,  G02F1/025

Abstract: An optical modulator (101) that modulates light through the semiconductor substrate (103) through the back side of an integrated circuit die (103). In one embodiment, an optical modulator is disposed within a flip chip packaged integrated circuit die (103). The optical modulator includes a modulation region (115) through which an optical beam is passed a plurality of times. In one embodiment, the optical beam (111) enters through the back side of th e semiconductor substrate at a first location (123) and the modulated optical beam (127) is deflected out through a second location (125) on the back side of the semiconductor substrate (103). The interaction length of the optical modulator is increased by internally deflecting and passing the optical beam through the modulation region a plurality of times. In one embodiment, total internal reflection is used to deflect the optical beam. In another embodiment, reflective materials (233) are used to internally deflect the optical beam. In one embodiment, the modulation region is provided with a charged region formed with a p-n junction (115, 215). In another embodiment, the charged region is provided using metal-oxide-semiconductor type structures (315, 415).

公开(公告)号：CA2389067A1

公开(公告)日：2001-05-03

申请号：CA2389067

申请日：2000-10-18

Applicant: INTEL CORP

Inventor： KOEHL SEAN M ,  PANICCIA MARIO J ,  NIKONOV DMITRI

IPC: G02F1/015 ,  G02F1/025

Abstract: An optical modulator (101) that modulates light through the semiconductor substrate (103) through the back side of an integrated circuit die (103). In one embodiment, an optical modulator is disposed within a flip chip packaged integrated circuit die (103). The optical modulator includes a modulation region (115) through which an optical beam is passed a plurality of times. I n one embodiment, the optical beam (111) enters through the back side of the semiconductor substrate at a first location (123) and the modulated optical beam (127) is deflected out through a second location (125) on the back side of the semiconductor substrate (103). The interaction length of the optical modulator is increased by internally deflecting and passing the optical beam through the modulation region a plurality of times. In one embodiment, total internal reflection is used to deflect the optical beam. In another embodiment, reflective materials (233) are used to internally deflect the optical beam. In one embodiment, the modulation region is provided with a charged region formed with a p-n junction (115, 215). In another embodiment, the charged region is provided using metal-oxide-semiconductor type structur es (315, 415).

公开(公告)号：GB2461109A

公开(公告)日：2009-12-23

申请号：GB0818923

申请日：2007-06-22

Applicant: INTEL CORP

Inventor： LIU ANSHENG ,  PANICCIA MARIO J ,  JONES RICHARD

IPC: H01S5/10 ,  H04B10/04

Abstract: An apparatus and method providing a plurality of modulated optical beams from a single layer of semiconductor material. For one example, an apparatus includes a plurality of optical waveguides disposed in a single layer of semiconductor material. Each one of the plurality of optical waveguides includes an optical cavity defined along the optical waveguide. A single bar of gain medium material adjoining the single layer of semiconductor material across the plurality of optical waveguides is included. The gain medium-semiconductor material interface is defined along each of the plurality of optical waveguides. A plurality of optical modulators is disposed in the single layer of semiconductor material. Each one of the plurality of optical modulators is optically coupled to a respective one of the plurality of optical waveguides to modulate a respective optical beam directed from the optical cavity.

公开(公告)号：DE602004006314T2

公开(公告)日：2008-01-10

申请号：DE602004006314

申请日：2004-12-23

Applicant: INTEL CORP

Inventor： GREEN EVAN R ,  PANICCIA MARIO J ,  KOEHL SEAN M ,  JONES RICHARD ,  ANTHONY GUY S

IPC: H04B10/12 ,  H04B10/43 ,  H04J11/00 ,  H04L5/02 ,  H04L27/20 ,  H04L27/22 ,  H04L27/26

Abstract: A broadband receiving apparatus includes an antenna to receive a radio signal having a plurality of modulation frequencies. An amplifier drives a laser source from the broadband radio signal to produce an optical signal having a plurality of spectral components. A diffraction grating transforms the optical signal into its spectral components. An array of photo-detectors converts the spectral components into electronic signals corresponding to the plurality of modulation frequencies. A transmitting apparatus includes an array of coherent laser emitters driven by electronic signals corresponding to a plurality of modulation frequencies to produce optical signals corresponding to a plurality of spectral components. A diffraction grating inverse transforms the spectral components into a composite optical signal. A photo-detector converts the composite optical signal into a composite electronic signal including the plurality of modulation frequencies. An amplifier amplifies the composite electronic signal for transmission as a broadband radio signal.