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    VERTICAL MIRROR IN A SILICON PHOTONIC CIRCUIT
    1.
    发明申请
    VERTICAL MIRROR IN A SILICON PHOTONIC CIRCUIT 审中-公开
    硅光子电路中的垂直镜像

    公开(公告)号：WO2011037742A2

    公开(公告)日：2011-03-31

    申请号：PCT/US2010047987

    申请日：2010-09-07

    Applicant: INTEL CORP ,  HECK JOHN ,  LIU ANSHENG ,  MORSE MICHAEL T ,  RONG HAISHENG

    Inventor： HECK JOHN ,  LIU ANSHENG ,  MORSE MICHAEL T ,  RONG HAISHENG

    IPC: G02B6/122 ,  G02B6/13

    CPC classification number: H01L31/02327 ,  G02B6/4214

    Abstract: A vertical total internal reflection (TIR) mirror and fabrication thereof is made by creating a re-entrant profile using crystallographic silicon etching. Starting with an SOI wafer, a deep silicon etch is used to expose the buried oxide layer, which is then wet-etched (in HF), opening the bottom surface of the Si device layer. This bottom silicon surface is then exposed so that in a crystallographic etch, the resulting shape is a re-entrant trapezoid with facets. These facets can be used in conjunction with planar silicon waveguides to reflect the light upwards based on the TIR principle. Alternately, light can be coupled into the silicon waveguides from above the wafer for such purposes as wafer level testing.

    Abstract translation: 垂直全内反射（TIR）反射镜及其制造是通过使用晶体硅蚀刻产生凹入轮廓而制成的。 从SOI晶片开始，使用深硅蚀刻来暴露掩埋氧化物层，然后对其进行湿蚀刻（在HF中），从而打开Si器件层的底表面。 然后暴露该底部硅表面，以便在晶体蚀刻中，所得到的形状是具有小平面的凹入梯形。 根据TIR原理，这些刻面可以与平面硅波导结合使用，以向上反射光线。 或者，可以从晶圆上方将光耦合到硅波导中以用于晶圆级测试等目的。

    TWO-PHOTON-ABSORPTION-BASED SILICON WAVEGUIDE PHOTO-POWER MONITOR
    2.
    发明申请
    TWO-PHOTON-ABSORPTION-BASED SILICON WAVEGUIDE PHOTO-POWER MONITOR 审中-公开
    两个基于光吸收的硅波导照明监视器

    公开(公告)号：WO2012044618A2

    公开(公告)日：2012-04-05

    申请号：PCT/US2011053470

    申请日：2011-09-27

    Applicant: INTEL CORP ,  RONG HAISHENG ,  HSIEH I-WEI ANDY ,  PANICCIA MARIO J

    Inventor： RONG HAISHENG ,  HSIEH I-WEI ANDY ,  PANICCIA MARIO J

    IPC: G01J3/00 ,  G01J3/02

    CPC classification number: H01L22/14 ,  H01L22/34

    Abstract: Instead of monitoring the optical power coming out of a waveguide, a direct method of monitoring the optical power inside the waveguide without affecting device or system performance is provided. A waveguide comprises a p-i-n structure which induces a TPA-generated current and may be enhanced with reverse biasing the diode. The TPA current may be measured directly by probing metal contacts provided on the top surface of the waveguide, and may enable wafer-level testing. The p-i-n structures may be implemented at desired points throughout an integrated network, and thus allows probing of different devices for in-situ power monitor and failure analysis.

    Abstract translation: 提供了监视波导中的光功率而不是监视波导内的光功率而不影响设备或系统性能的直接方法。 波导包括p-i-n结构，其诱导TPA产生的电流并且可以通过反向偏置二极管来增强。 可以通过探测设置在波导顶表面上的金属触点直接测量TPA电流，并且可以实现晶片级测试。 p-i-n结构可以在整个集成网络中的所需点处实现，并且因此允许探测用于原位功率监测和故障分析的不同设备。

    TWO-PHOTON ABSORPTION GENERATED CARRIER LIFETIME REDUCTION IN SEMICONDUCTOR WAVEGUIDE FOR SEMICONDUCTOR BASED RAMAN LASER AND AMPLIFIER
    3.
    发明申请
    TWO-PHOTON ABSORPTION GENERATED CARRIER LIFETIME REDUCTION IN SEMICONDUCTOR WAVEGUIDE FOR SEMICONDUCTOR BASED RAMAN LASER AND AMPLIFIER 审中-公开
    半导体基拉曼激光器和放大器半导体波导中的双光子吸收产生载流子寿命降低

    公开(公告)号：WO2006028621A9

    公开(公告)日：2006-07-13

    申请号：PCT/US2005027631

    申请日：2005-08-04

    Applicant: INTEL CORP ,  LIU ANSHENG ,  PANICCIA MARIO ,  RONG HAISHENG

    Inventor： LIU ANSHENG ,  PANICCIA MARIO ,  RONG HAISHENG

    IPC: H01S3/30 ,  G02B6/12 ,  G02B6/122 ,  G02B6/26 ,  H01S3/063

    CPC classification number: G02B6/122 ,  G02B2006/12097 ,  H01S3/063 ,  H01S3/083 ,  H01S3/0941 ,  H01S3/30

    Abstract: A semiconductor based Raman laser and/or amplifier with reduced two-photon absorption generated carrier lifetimes. An apparatus according to embodiments of the present invention includes optical waveguide disposed in semiconductor material and a diode structure disposed in the optical waveguide. The optical waveguide is to be coupled to a pump laser to receive a first optical beam having a first wavelength and a first power level to result in emission of a second optical beam of a second wavelength in the semiconductor waveguide. The diode structure is to be biased to sweep out free carriers from the optical waveguide generated in response to two photon absorption in the optical waveguide.

    Abstract translation: 具有减少的双光子吸收的基于半导体的拉曼激光器和/或放大器产生载流子寿命。 根据本发明实施例的设备包括设置在半导体材料中的光波导和设置在光波导中的二极管结构。 光波导将被耦合到泵浦激光器以接收具有第一波长和第一功率水平的第一光束，以导致在半导体波导中发射第二波长的第二光束。 二极管结构将被偏置以从响应光波导中的双光子吸收而产生的光波导中扫出自由载流子。

    ON-CHIP DIFFRACTION GRATING PREPARED BY CRYSTALLOGRAPHIC WET-ETCH
    4.
    发明申请
    ON-CHIP DIFFRACTION GRATING PREPARED BY CRYSTALLOGRAPHIC WET-ETCH 审中-公开
    晶体湿蚀刻制备的芯片衍射衍射

    公开(公告)号：WO2013106008A3

    公开(公告)日：2013-10-03

    申请号：PCT/US2012030759

    申请日：2012-03-27

    Applicant: INTEL CORP ,  NA YUN-CHUNG ,  HECK JOHN ,  RONG HAISHENG

    Inventor： NA YUN-CHUNG ,  HECK JOHN ,  RONG HAISHENG

    IPC: G02B5/18 ,  G02B5/00

    CPC classification number: G02B5/1857 ,  G02B5/1842 ,  G02B5/1861 ,  G02B6/02009

    Abstract: Methods of forming microelectronic structures are described. Embodiments of those methods may include forming a photomask on a (110) silicon wafer substrate, wherein the photomask comprises a periodic array of parallelogram openings, and then performing a timed wet etch on the (110) silicon wafer substrate to form a diffraction grating structure that is etched into the (110) silicon wafer substrate.

    Abstract translation: 描述形成微电子结构的方法。 这些方法的实施例可以包括在（110）硅晶片衬底上形成光掩模，其中光掩模包括平行四边形开口的周期性阵列，然后在（110）硅晶片衬底上执行定时湿蚀刻以形成衍射光栅结构 被蚀刻到（110）硅晶片衬底中。

    INVERTED 45 DEGREE MIRROR FOR PHOTONIC INTEGRATED CIRCUITS
    6.
    发明申请
    INVERTED 45 DEGREE MIRROR FOR PHOTONIC INTEGRATED CIRCUITS 审中-公开
    用于光子集成电路的反面45度镜面

    公开(公告)号：WO2014004068A3

    公开(公告)日：2014-03-06

    申请号：PCT/US2013045027

    申请日：2013-06-10

    Applicant: INTEL CORP

    Inventor： HECK JOHN ,  RONG HAISHENG

    IPC: G02B6/12 ,  G02B5/08

    CPC classification number: G02B6/4214 ,  G02B6/122 ,  G02B6/136 ,  G02B6/26 ,  G02B6/42 ,  G02B6/4208 ,  G02B2006/12104 ,  H01L21/30604

    Abstract: Inverted 45° semiconductor mirrors as vertical optical couplers for PIC chips, particularly optical receivers and transmitters. An inverted 45° semiconductor mirror functions to couple light between a plane in the PIC chip defined by thin film layers and a direction normal to a top surface of the PIC chip where it may be generated or collected by an off-chip component, such as a wire terminal. In an exemplary embodiment, a (110) plane of a cubic crystalline semiconductor may provide a 45° facet inverted relative to a (100) surface of the semiconductor from which light is to be emitted. In further embodiments, a (110) plane may be exposed by undercutting a device layer of a semiconductor on insulator (SOI) substrate. Alternatively, a pre-etched substrate surface may be bonded to a handling wafer, thinned, and then utilized for PIC waveguide formation.

    Abstract translation: 倒置45°半导体镜作为PIC芯片的垂直光耦合器，特别是光接收器和发射器。 倒置的45°半导体反射镜用于在由薄膜层限定的PIC芯片中的平面与垂直于PIC芯片顶表面的方向之间耦合光，其中PIC芯片的平面可由芯片外部件生成或收集，例如 一个电线终端。 在示例性实施例中，立方晶体半导体的（110）平面可以提供相对于要从其发射光的半导体的（100）表面反转的45°小平面。 在进一步的实施例中，可以通过底切半导体绝缘体（SOI）衬底的器件层来暴露（110）平面。 或者，可以将预先蚀刻的衬底表面结合到处理晶片，变薄，然后用于PIC波导形成。

    EFFICIENT SILICON-ON-INSULATOR GRATING COUPLER
    7.
    发明申请
    EFFICIENT SILICON-ON-INSULATOR GRATING COUPLER 审中-公开
    高效绝缘子镀层接头

    公开(公告)号：WO2012134632A2

    公开(公告)日：2012-10-04

    申请号：PCT/US2012024073

    申请日：2012-02-07

    Applicant: INTEL CORP ,  NA YUN-CHUNG N ,  RONG HAISHENG

    Inventor： NA YUN-CHUNG N ,  RONG HAISHENG

    IPC: H01S5/10 ,  G02B6/12

    CPC classification number: G01M11/00 ,  G02B6/1228 ,  G02B6/124

    Abstract: An efficient grating coupler for a semiconductor optical mode includes a tapered edge to couple light between waveguide modes constrained by differing waveguide thicknesses. An optical circuit or laser has a waveguide in a rib or strip waveguide section that is of different height (e.g., having different vertical constraints) than a waveguide section that has a grating coupler through which light passes off-circuit. The tapered edge can couple light between the two waveguide sections with very low loss and back-reflection. The low loss and minimal back-reflection enables testing of the photonics circuit on a wafer level, and improved performance through the grating coupler.

    Abstract translation: 用于半导体光学模式的有效的光栅耦合器包括锥形边缘，以在由不同波导厚度约束的波导模之间耦合光。 光学电路或激光器具有与具有不同高度（例如，具有不同的垂直约束）的肋条或带状波导部分中的波导，该波导部分具有光通过偏光的光栅耦合器。 锥形边缘可以以非常低的损耗和背反射在两个波导部分之间耦合光。 低损耗和最小的背反射使得能够在晶片级上测试光子电路，并通过光栅耦合器改善性能。

    REDUCED LOSS ULTRA-FAST SEMICONDUCTOR MODULATOR AND SWITCH
    8.
    发明申请
    REDUCED LOSS ULTRA-FAST SEMICONDUCTOR MODULATOR AND SWITCH 审中-公开
    减少失效的超快速半导体调制器和开关

    公开(公告)号：WO2006063348A9

    公开(公告)日：2006-08-03

    申请号：PCT/US2005044928

    申请日：2005-12-09

    Applicant: INTEL CORP ,  LIU ANSHENG ,  PANICCIA MARIO ,  RONG HAISHENG

    Inventor： LIU ANSHENG ,  PANICCIA MARIO ,  RONG HAISHENG

    IPC: H04B10/155

    CPC classification number: H04B10/505 ,  G02F1/2257 ,  G02F1/3515 ,  G02F1/3526

    Abstract: A fast optical modulator or switch with reduced optical loss is disclosed. An apparatus according to aspects of the present invention includes an optical splitter disposed in a semiconductor material. An optical beam having a first wavelength is split by the optical splitter into first and second portions. First and second optical waveguides disposed in the semiconductor material are optically coupled to the optical splitter. The first and second portions of the optical beam are to be directed through the first and second optical waveguides, respectively. The first optical waveguide is also optically coupled to receive a pump optical beam. The pump optical beam has a pump wavelength and a pump power level to amplify and phase shift the first portion of the optical beam of the first wavelength in the first optical waveguide. A diode structure is disposed in the first optical waveguide and is selectively biased to sweep out free carriers from the first optical waveguide generated in response to two photon absorption in the optical waveguide. An optical coupler is disposed in the semiconductor material and is optically coupled to the first and second optical waveguides to combine the first and second portions of the optical beam.

    Abstract translation: 公开了一种具有光损耗降低的快速光调制器或开关。 根据本发明的方面的装置包括设置在半导体材料中的光分路器。 具有第一波长的光束被光分路器分成第一和第二部分。 设置在半导体材料中的第一和第二光波导光学耦合到光分路器。 光束的第一和第二部分分别被引导通过第一和第二光波导。 第一光波导也被光学耦合以接收泵浦光束。 泵浦光束具有泵浦波长和泵浦功率电平，以在第一光波导中放大并移相第一波长的光束的第一部分。 二极管结构设置在第一光波导中，并且被选择性地偏置以从响应于光波导中的两个光子吸收而产生的第一光波导扫出自由载流子。 光耦合器设置在半导体材料中并且光耦合到第一和第二光波导以组合光束的第一和第二部分。

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