Abstract:
A heat dissipation device that includes a conduit in a base portion thereof. An opening extends from a dissipation surface of the base portion to a conduit. The conduit allows air from a fan to flow within the base portion, which can improve heat removal from hotspots, and alleviate air stagnation in the heat dissipation device.
Abstract:
A heat sink includes a heat sink body including a number of fins and a cavity for holding a phase change material and a number of particles to enhance the mixing of the phase change material during the operation of the heat sink. In operation, the body of the heat sink conducts thermal energy to the phase change material. The energy is absorbed during the phase change of the phase change material. After absorbing energy and changing to a liquid state, the phase change material continues to dissipate energy by convection. The convention currents in the cavity are directed by the shape of the cavity surfaces an enhanced by the particles intermixed with the phase change material.
Abstract:
PIEZOELECTRIC MATERIAL IS EMBEDDED IN EPOXY LAYERS (220) OF CIRCUIT CARDS (102) TO CONTROL THERMAL EXPANSION AND CONTRACTION AS A FUNCTION OF TEMPERATURE CHANGES. A TEMPERATURE SENSOR (212) AND THERMOSTAT (214) GENERATES A CONTROLLED VOLTAGE AS A FUNCTION OF TEMPERATURE AND APPLIES THE VOLTAGE TO PIEZOELECTRIC BLOCKS (120) WITHIN THE CIRCUIT CARD (102). LOCAL AREAS OF THE CIRCUIT CARD CAN HAVE DIFFERENT AMOUNTS OF PIEZOELECTRIC MATERIAL OR DIFFERENT THERMOSTAT. PIEZOELECTRIC BLOCKS (120) CAN BE ARRANGED IN REGULAR PATTERNS OR CAN BE RANDOMLY OR PSEUDO-RANDOMLY PLACED.(FIG 2)
Abstract:
In one embodiment, an apparatus includes a phase change material, a plurality of particles intermixed with the phase change material, and a conductive structure encapsulating the phase change material. The conductive structure includes a cavity including a cone shape. In one embodiment, a method includes forming a conductive structure having a cavity, injecting a phase change material into the cavity, injecting a plurality of spheres into the cavity, and sealing the cavity.
Abstract:
A SYSTEM TO PACKAGE HIGH PERFORMANCE MICROELECTRONIC DEVICES, SUCH AS PROCESSORS, RESPONDS TO COMPONENT TRANSIENTS. IN ONE EMBODIMENT, THE SYSTEM INCLUDES A DECOUPLING CAPACITOR [130] THAT IS DISPOSED BETWEEN A VCC ELECTRICAL BUMP AND A VCC ELECTRICAL BUMP. THE DECOUPLING CAPACITOR[130] HAD VCC AND VSS TERMINALS[134]. THE VCC AND VSS TERMINALS[134] SHARE ELECTRICAL PADS WITH THE VCC ELECTRICAL BUMP AND THE VSS ELECTRICAL BUMP. A SIMPLE CURRENT LOOP IS CREATED THAT IMPROVES THE POWER DELIVERY FOR THE SYSTEM.FIG.1
Abstract:
In one embodiment, an apparatus includes a phase change material, a plurality of particles intermixed with the phase change material, and a conductive structure encapsulating the phase change material. The conductive structure includes a cavity including a cone shape. In one embodiment, a method includes forming a conductive structure having a cavity, injecting a phase change material into the cavity, injecting a plurality of spheres into the cavity, and sealing the cavity.
Abstract:
Piezoelectric material is embedded in epoxy layers of circuit cards to control thermal expansion and contraction as a function of temperature changes. A temperature sensor and thermostat generates a controlled voltage as a function of temperature and applies the voltage to piezoelectric blocks within the circuit card. Local areas of the circuit card can have different amounts of piezoelectric material or different thermostats. Piezoelectric blocks can be arranged in regular patterns or can be randomly or pseudo-randomly placed.
Abstract:
AN EMBODIMENT OF THE PRESENT INVENTION DESCRIBED AND SHOWN IN THE SPECIFICATION AND DRAWINGS IS A PROCESS AND A PACKAGE FOR FACILITATING COOLING AND GROUNDING OF A SEMICONDUCTOR DIE [12] USING CARBON NANOTUBES [38] IN A THERMAL INTERFACE LAYER [26] BETWEEN THE DIE [12] AND A THERMAL MANAGEMENT AID. THE EMBODIMENTS THAT ARE DISCLOSED HAVE THE CARBON NANOTUBES [38] POSITIONED AND SIZED TO UTILIZE THEIR HIGH THERMAL AND ELECTRICAL CONDUCTANCE TO FACILITATE THE FLOW OF HEAT AND CURRENT TO THE THERMAL MANAGEMENT AID. ONE EMBODIMENT DISCLOSED HAS THE CARBON NANOTUBES [38] MIXED WITH A PASTE MATRIX BEFORE BEING APPLIED. ANOTHER DISCLOSED EMBODIMENT HAS THE CARBON NANOTUBES [38] GROWN ON THE SURFACE [16] OF THE SEMICONDUCTOR DIE [12].(FIG 3)
Abstract:
PIEZOELECTRIC WAFERS (104, 106) ARE AFFIXED TO A CIRCUIT CARD (102) TO CONTROL DISPLACEMENT OF THE CIRCUIT CARD WHEN VIBRATED . A TRIGGER WAFER (110) LOCATED AT AN ANTI-NODE OF THE DOMINANT MODE SHAPE PRODUCES A VOLTAGE AS A FUNCTION OF MODAL DISPLACEMENT . A CONTROL SYSTEM (114) RESPONSIVE TO THE TRIGGER WAFER (110) PRODUCES VOLTAGES THAT ARE APPLIED TO FLEX WAFERS (104, 106) AT A DIFFERENT ANTI-NODE OF THE DOMINANT MODE SHAPE. THE FLEX WAFERS EXPAND AND CONTRACT IN A MANNER THAT REDUCES THE MODAL DISPLACEMENT OF THE CIRCUIT CARD (102). MULTIPLE FLEX WAFERS CAN EXIST, AFFIXED TO THE CIRCUIT CARD SUBSTANTIALLY OPPOSITE EACH OTHER , OR A SINGLE FLEX WAFER CAN EXIST WITH A SINGLE TRIGGER WAFER (110). THE TRIGGER WAFER (110) CAN BE LOCATED SUBSTANTIALLY OPPOSITE THE FLEX WAFER OR CAN BE LOCATED ELSEWHERE ON THE CIRCUIT CARD (102). FIGURE 1A.
Abstract:
A DISPLAY (105) INCLUDES PIXELS (207) HAVING A MAGNETICALLY CONTROLLABLE REFLECTIVITY.THE PIXELS (207) ARE FORMED BETWEEN A PAIR OF FLEXIBLE NON-CONDUCTIVE SHEETS (201). EACH OF THE MAGNETICALLY CONTROLLABLE PIXELS INCLUDES A FLEXIBLE RING (215) LOCATED BETWEEN THE FLEXIBLE NONCONDUCTIVE SHEETS (201). EACH OF THE MAGNETICALLY CONTROLLABLE PIXELS ALSO INCLUDES MAGNETIC PARTICLES (219) LOCATED WITHIN THE FLEXIBLE RING (215). THE LOCATION OF THE MAGNETIC PARTICLES (219) WITH RESPECT TO THE FLEXIBLE NON-CONDUCTIVE SHEETS (201) DETERMINES THE REFLECTIVITY OF THE PIXEL. THE DISPLAY (105) IS ESPECIALLY SUITABLE FOR USE IN CONNECTION WITH PORTABLE ELECTRONIC DEVICES(FIG 3A,3B).