Abstract:
A hybrid filter having an acoustic wave resonator embedded in a cavity of a package substrate is described. In an example, a packaged system includes a package substrate having a die side and a land side opposite the die side. An active die is physically and electrically coupled to the die side of the package substrate. An acoustic wave resonator (AWR) device is in a cavity on the die side of the package substrate, the AWR device including an acoustic wave resonator (AWR) die. The AWR die includes an acoustic wave resonator wherein the AWR device is directly electrically coupled to the active die.
Abstract:
Embodiments of the invention include a microelectronic device that includes a first ultra thin substrate formed of organic dielectric material and conductive layers, a first mold material to integrate first radio frequency (RF) components with the first substrate, and a second ultra thin substrate being coupled to the first ultra thin substrate. The second ultra thin substrate formed of organic dielectric material and conductive layers. A second mold material integrates second radio frequency (RF) components with the second substrate.
Abstract:
Embodiments of the present disclosure may relate to a transceiver to transmit and receive concurrently radio frequency (RF) signals via a dielectric waveguide. In embodiments, the transceiver may include a transmitter to transmit to a paired transceiver a channelized radio frequency (RF) transmit signal via the dielectric waveguide. A receiver may receive from the paired transceiver a channelized RF receive signal via the dielectric waveguide. In embodiments, the channelized RF receive signal may include an echo of the channelized RF transmit signal. The transceiver may further include an echo suppression circuit to suppress from the channelized RF receive signal the echo of the channelized RF transmit signal. In some embodiments, the channelized RF transmit signal and the channelized RF receive signal may be within a frequency range of approximately 30 gigahertz (GHz) to approximately 1 terahertz (THz), and the transceiver may provide full-duplex millimeter-wave communication.
Abstract:
Embodiments of the present disclosure may relate to a transmitter to transmit a radio frequency (RF) signal to a receiver via a dielectric waveguide where the transmitter includes a plurality of mixers to generate modulated RF signals and a combiner to combine the modulated RF signals. Embodiments may also include a receiver to receive, from a dielectric waveguide, a RF signal where the receiver includes a splitter to split the RF signal into a plurality of signal paths, a plurality of filters, and a plurality of demodulators. Embodiments may also include a dielectric waveguide communication apparatus that may include the transmitter and the receiver. Other embodiments may be described and/or claimed.
Abstract:
Embodiments of the invention include a microelectronic device that includes a first substrate having radio frequency (RF) circuits and a second substrate coupled to the first substrate. The second substrate includes a first section and a second section with the second substrate being foldable in order to obtain a desired orientation of an antenna unit of the second section for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.
Abstract:
Embodiments of the invention include a base station that includes a central transceiver unit (CTU) having a plurality of transceiver cores and a substrate. A printed circuit board (PCB) supports the substrate and at least one antenna unit is coupled to the PCB with at least one of a cable and a waveguide. The at least one antenna unit transmits and receives communications at a frequency of approximately 4 GHz or higher.
Abstract:
The systems and methods described herein provide a traveling wave launcher system physically and communicably coupled to a semiconductor package and to a waveguide connector. The traveling wave launcher system includes a slot-line signal converter and a tapered slot launcher. The slot-line signal converter may be formed integral with the semiconductor package and includes a balun structure that converts the microstrip signal to a slot-line signal. The tapered slot launcher is communicably coupled to the slot-line signal converter and includes a planar first member and a planar second member that form a slot. The tapered slot launcher converts the slot-line signal to a traveling wave signal that is propagated to the waveguide connector.
Abstract:
Integration of a side-radiating waveguide launcher system into a semiconductor package beneficially permits the coupling of a waveguide directly to the semiconductor package. Included are a first conductive member and a second conductive member separated by a dielectric material. Also included is a conductive structure, such as a plurality of vias, that conductively couples the first conductive member and the second conductive member. Together, the first conductive member, the second conductive member, and the conductive structure form an electrically conductive side-radiating waveguide launcher enclosing shaped space within the dielectric material. The shaped space includes a narrow first end and a wide second end. An RF excitation element is disposed proximate the first end and a waveguide may be operably coupled proximate the second end of the shaped space.
Abstract:
In various embodiments, disclosed herein are systems and methods directed to the fabrication of a coreless semiconductor package (e.g., a millimeter (mm)-wave antenna package) having an asymmetric build-up layer count that can be fabricated on both sides of a temporary substrate (e.g., a core). The asymmetric build-up layer count can reduce the overall layer count in the fabrication of the semiconductor package and can therefore contribute to fabrication cost reduction. In further embodiments, the semiconductor package (e.g., a millimeter (mm)-wave antenna packages) can further comprise dummification elements disposed near one or more antenna layers. Further, the dummification elements disposed near one or more antenna layers can reduce image current and thereby increasing the antenna gain and efficiency.
Abstract:
Embodiments of the invention include a microelectronic device that includes an overmolded component having a first die with a silicon based substrate. A second die is coupled to the first die with the second die being formed with compound semiconductor materials in a different substrate. A substrate is coupled to the first die. The substrate includes an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.