公开(公告)号：WO1996010840A1

公开(公告)日：1996-04-11

申请号：PCT/US1995011563

申请日：1995-09-13

Applicant: INTEL CORPORATION

Inventor： INTEL CORPORATION ,  ONG, Tong-Chern ,  TANG, Daniel, N.

IPC: H01L21/8246

CPC classification number: H01L21/7621 ,  H01L21/76216 ,  H01L21/76221 ,  H01L27/105 ,  H01L27/11521

Abstract: A method of forming a memory device with improved isolation between diffusion lines. Parallel, spaced apart thick oxide strips (201) are grown on a substrate. Next, spaced apart, parallel strips (302) having a polysilicon (302a) and nitride (302b) layer, oriented perpendicular to the first strips (201), are formed. The oxide (201) between the second strips is removed, followed by an implantation to form source (402) and drain (401) regions. The nitride layer (302b) on the second strips is removed on those strips between two drain diffusions (401) and an oxidation is performed to form self-aligned thick oxide (602) over the source and drain regions. The strips from which the nitride has been removed are also oxidized, thus providing isolation between adjacent drain lines.

Abstract translation: 一种形成具有改善的扩散线隔离的存储器件的方法。 在衬底上生长平行的间隔开的厚氧化物条（201）。 接下来，形成具有垂直于第一条带（201）定向取向的间隔开的具有多晶硅（302a）和氮化物（302b）层的平行条带（302）。 去除第二条带之间的氧化物（201），随后进行注入以形成源极（402）和漏极（401）区域。 第二条带上的氮化物层（302b）在两个漏极扩散（401）之间的那些条上被去除，并且在源极和漏极区域上进行氧化以形成自对准的厚氧化物（602）。 去除氮化物的条带也被氧化，从而在相邻的排水管线之间提供隔离。

公开(公告)号：EP0731983A1

公开(公告)日：1996-09-18

申请号：EP95931812.0

申请日：1995-09-13

Applicant: INTEL CORPORATION

Inventor： ONG, Tong-Chern ,  TANG, Daniel, N.

IPC: H01L21 ,  H01L27

CPC classification number: H01L21/7621 ,  H01L21/76216 ,  H01L21/76221 ,  H01L27/105 ,  H01L27/11521

Abstract: A method of forming a memory device with improved isolation between diffusion lines. Parallel, spaced apart thick oxide strips (201) are grown on a substrate. Next, spaced apart, parallel strips (302) having a polysilicon (302a) and nitride (302b) layer, oriented perpendicular to the first strips (201), are formed. The oxide (201) between the second strips is removed, followed by an implantation to form source (402) and drain (401) regions. The nitride layer (302b) on the second strips is removed on those strips between two drain diffusions (401) and an oxidation is performed to form self-aligned thick oxide (602) over the source and drain regions. The strips from which the nitride has been removed are also oxidized, thus providing isolation between adjacent drain lines.

公开(公告)号：EP0731983B1

公开(公告)日：2002-11-27

申请号：EP95931812.2

申请日：1995-09-13

Applicant: INTEL CORPORATION

Inventor： ONG, Tong-Chern ,  TANG, Daniel, N.

IPC: H01L21/8246 ,  H01L21/8247 ,  H01L21/762

CPC classification number: H01L21/7621 ,  H01L21/76216 ,  H01L21/76221 ,  H01L27/105 ,  H01L27/11521

Abstract: A method of forming a memory device with improved isolation between diffusion lines. Parallel, spaced apart thick oxide strips (201) are grown on a substrate. Next, spaced apart, parallel strips (302) having a polysilicon (302a) and nitride (302b) layer, oriented perpendicular to the first strips (201), are formed. The oxide (201) between the second strips is removed, followed by an implantation to form source (402) and drain (401) regions. The nitride layer (302b) on the second strips is removed on those strips between two drain diffusions (401) and an oxidation is performed to form self-aligned thick oxide (602) over the source and drain regions. The strips from which the nitride has been removed are also oxidized, thus providing isolation between adjacent drain lines.