公开(公告)号：JP2004341299A

公开(公告)日：2004-12-02

申请号：JP2003138672

申请日：2003-05-16

Applicant: Ishikawajima Harima Heavy Ind Co Ltd ,  石川島播磨重工業株式会社

Inventor： ISHII MIKITO ,  IZAWA ATSUSHI ,  NISHIDA KENICHIRO ,  KAWAGUCHI NORIHITO ,  MASAKI MIYUKI ,  YOSHINOUCHI ATSUSHI

IPC: G02B27/09

Abstract: PROBLEM TO BE SOLVED: To provide a device and a method in which generation of laser beam interference fringes is effectively reduced by employing a constitution, that is compact in size and easily adjusted, even though a laser light source that is highly coherent is used.
SOLUTION: Laser beams 1 are converged on a focusing surface 2. The converged laser beams 1 are made incident on a front surface 14a of an interference reducing element 14, which is made of a laser transmissible material, from the focusing surface 2. Then, spacial phase differences are generated to the laser beams by conducting multiplex reflection of the laser beams using mutually parallel total reflection surfaces 14c and 14d in accordance with incident angles and the beams are emitted from a back surface 14b of the element 14.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2003324188A

公开(公告)日：2003-11-14

申请号：JP2002128582

申请日：2002-04-30

Applicant: Ishikawajima Harima Heavy Ind Co Ltd ,  石川島播磨重工業株式会社

Inventor： KAWAGUCHI NORIHITO ,  MURAYAMA TAKAHIKO ,  ISHII MIKITO ,  NISHIDA KENICHIRO ,  MASAKI MIYUKI

IPC: H01L21/20 ,  H01L21/02 ,  H01L27/12

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a large-area single-crystal silicon substrate.
SOLUTION: In this method for manufacturing a large-area single-crystal silicon substrate, single-crystal silicon thin films 12 are peeled from a single- crystal silicon wafer 11, a plurality of single-crystal silicon thin films 12 are attached to the surface of a glass substrate 21 with their crystal orientations lines up, and an amorphous silicon film 31 is formed on the surface of the glass substrate 21 to cover the whole single-crystal silicon thin films 12, the surface of the amorphous silicon film 31 is etched to expose surfaces 12a of the single-crystal silicon thin films 12, and a residual amorphous silicon film 41 is crystallized along the lines of the crystal orientations of the single-crystal silicon thin films 12 to form a single-crystal silicon thin film 51 on the whole surface of the glass substrate 21.
COPYRIGHT: (C)2004,JPO

Abstract translation: 解决的问题：提供一种制造大面积单晶硅基板的方法。 解决方案：在制造大面积单晶硅衬底的方法中，从单晶硅晶片11剥离单晶硅薄膜12，附加多个单晶硅薄膜12 到玻璃基板21的表面，其晶体取向排列，并且在玻璃基板21的表面上形成非晶硅膜31，以覆盖整个单晶硅薄膜12，非晶硅膜的表面 31蚀刻以暴露单晶硅薄膜12的表面12a，并且残留的非晶硅膜41沿着单晶硅薄膜12的晶体取向线结晶，以形成单晶硅薄膜 薄膜51在玻璃基板21的整个表面上。版权所有（C）2004，JPO

公开(公告)号：JP2002261042A

公开(公告)日：2002-09-13

申请号：JP2001388888

申请日：2001-12-21

Applicant: SEMICONDUCTOR ENERGY LAB ,  ISHIKAWAJIMA HARIMA HEAVY IND

Inventor： TANAKA KOICHIRO ,  NAKAJIMA SETSUO ,  YAGI TAKETO ,  ISHII MIKITO ,  NISHIDA KENICHIRO ,  KAWAGUCHI NORIHITO ,  MASAKI MIYUKI ,  YOSHINOUCHI ATSUSHI

IPC: H01L21/20 ,  H01L21/268 ,  H01S3/00

Abstract: PROBLEM TO BE SOLVED: To provide a laser irradiating device whose output time can be prolonged in the laser irradiating device whose running cost is lower than a conventional case and which has large output and in a laser irradiating method by using the device. SOLUTION: When a semiconductor film is irradiated with a laser beam whose solid laser is set to be a light source and whose output time is short, the other laser beam is delayed with respect to prescribed laser beam and an object to be treated is irradiated with a laser beam obtained by synthesizing the light beams. Thus, it is made to be equal to a case where the laser beam with long output time is irradiated.

公开(公告)号：JP2007110064A

公开(公告)日：2007-04-26

申请号：JP2006027096

申请日：2006-02-03

Applicant: Ishikawajima Harima Heavy Ind Co Ltd ,  石川島播磨重工業株式会社

Inventor： KAWAKAMI RYUSUKE ,  NISHIDA KENICHIRO ,  KAWAGUCHI NORIHITO ,  MASAKI MIYUKI ,  YOSHINOUCHI ATSUSHI

IPC: H01L21/268 ,  H01L21/20

CPC classification number: H01L21/02675 ,  B23K26/0613 ,  B23K26/0732 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296

Abstract: PROBLEM TO BE SOLVED: To provide a laser annealing method capable of forming a polycrystal body composed of crystal grains that are uniform in size in the long-side direction of a rectangular laser beam or a single crystal semiconductor film. SOLUTION: The laser annealing method is carried out by irradiating a semiconductor film formed on the surface of a substrate with a laser beam. The method uses a linearly polarized rectangular laser beam that it is rectangular in cross section vertical to its traveling direction, and that an electrical field faces towards the long-side direction of the rectangle, or includes stages of generating an elliptically polarized rectangular laser beam that a major axis faces towards the long-side direction of the rectangle, making the rectangular laser beam impinge on the surface of the substrate, and setting the wavelength of the rectangular laser beam nearly as long as the size of the desired crystal grain. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 解决的问题：提供能够形成由长方形激光或单晶半导体膜的长边方向尺寸均匀的晶粒构成的多晶体的激光退火方法。 解决方案：通过用激光束照射形成在基板表面上的半导体膜来进行激光退火方法。 该方法使用垂直于其行进方向的截面为矩形的线偏振矩形激光束，并且电场朝向矩形的长边方向，或包括产生椭圆偏振矩形激光束的阶段， 长轴面向矩形的长边方向，使得矩形激光束照射在基板的表面上，并且将矩形激光束的波长设定为与所需晶粒尺寸几乎相同的长度。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2004342954A

公开(公告)日：2004-12-02

申请号：JP2003139926

申请日：2003-05-19

Applicant: Ishikawajima Harima Heavy Ind Co Ltd ,  石川島播磨重工業株式会社

Inventor： NISHIDA KENICHIRO ,  KAWAGUCHI NORIHITO ,  ISHII MIKITO ,  MASAKI MIYUKI ,  YOSHINOUCHI ATSUSHI

IPC: H01L21/20 ,  H01L21/268

Abstract: PROBLEM TO BE SOLVED: To provide a laser annealing method and its apparatus which allow crystal grains with reduced inner defects to grow by melting a silicon film on a substrate by a solid-state laser and suppressing the sudden cooling of melted silicon.
SOLUTION: The laser annealing apparatus is provided with a beam synthesizing optical system 20 for synthesizing a pulse laser beam 2 and a continuous laser beam 4 on the same optical axis, and a converging optical system 16 for converging the synthetic laser beam 6. When the same part of a silicon film formed on the surface of a substrate 1 is irradiated with the synthesized laser beam 6, the silicon film is melted, and crystal grains are grown.
COPYRIGHT: (C)2005,JPO&NCIPI

公开(公告)号：JP2002343737A

公开(公告)日：2002-11-29

申请号：JP2001141642

申请日：2001-05-11

Applicant: ISHIKAWAJIMA HARIMA HEAVY IND

Inventor： ISHII MIKITO ,  NISHIDA KENICHIRO ,  KAWAGUCHI NORIHITO ,  MASAKI MIYUKI ,  YOSHINOUCHI ATSUSHI

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a laser annealing method and a laser annealing device by which a silicon film having a mobility better than that by a conventional constitution can be obtained. SOLUTION: Instead of a conventional laser annealing method by which a semiconductor film is crystallized, a method is prepared, wherein a phase plate gives a phase difference to a laser and plurality of coatings on its laser transmitting surface or laser reflecting surface. A laser is oscillated, emitted, and transmitted through a condensing lens while transmitted through the phase plate in front of/behind the condensing lens on an optical axis, and the condensed laser is applied to the semiconductor film.

公开(公告)号：JP2005252244A

公开(公告)日：2005-09-15

申请号：JP2005024838

申请日：2005-02-01

Applicant: Ishikawajima Harima Heavy Ind Co Ltd ,  石川島播磨重工業株式会社

Inventor： KAWAGUCHI NORIHITO ,  NISHIDA KENICHIRO ,  KAWAKAMI RYUSUKE

IPC: B23K26/00 ,  B23K101/40 ,  H01L21/02 ,  H01L21/265 ,  H01L27/12

CPC classification number: H01L21/76254

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor substrate in which, to make strong bond between an SOI layer and a glass substrate, no heat treatment is required at a high temperature in excess of 800°C but a material of a low melting point can be employed as a construction material of the glass substrate, to reduce a manufacturing cost of the semiconductor substrate. SOLUTION: The method of manufacturing a semiconductor substrate is intended for manufacturing a semiconductor substrate having a semiconductor thin-film layer by the use of a semiconductor wafer 1 and a transparent dielectric substrate 2. The method comprises: a thin-film formation step S1 of forming the semiconductor thin-film layer on the semiconductor wafer; a bonding step S2 of washing surfaces of the semiconductor wafer and dielectric substrate and bonding one surface of the substrate; a heat treatment step S3 for enhancing the bond strength of the bonded surfaces by heat treatment; a peeling step S4 of peeling the semiconductor thin-film layer on the dielectric substrate; a laser-irradiating step S5 of irradiating the dielectric substrate with a laser light beam from the semiconductor thin-film layer side or the transparent dielectric substrate side to improve the crystal quality of the semiconductor thin-film layer and also make strong bond between the semiconductor thin-film layer and the transparent dielectric substrate. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了提供一种制造半导体衬底的方法，其中为了在SOI层和玻璃衬底之间形成牢固的结合，在高于800℃的高温下不需要热处理，但是 可以采用低熔点材料作为玻璃基板的结构材料，以降低半导体基板的制造成本。 解决方案：制造半导体衬底的方法旨在通过使用半导体晶片1和透明电介质衬底2制造具有半导体薄膜层的半导体衬底。该方法包括：薄膜形成 在半导体晶片上形成半导体薄膜层的步骤S1; 洗涤所述半导体晶片和所述电介质基板的表面并粘合所述基板的一个表面的接合步骤S2; 通过热处理提高接合面的接合强度的热处理工序S3; 剥离电介质基板上的半导体薄膜层的剥离工序S4; 激光照射步骤S5，用来从半导体薄膜层侧或透明电介质基片侧的激光照射电介质基片，以提高半导体薄膜层的晶体质量，并且在半导体 薄膜层和透明电介质基板。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2005005365A

公开(公告)日：2005-01-06

申请号：JP2003164923

申请日：2003-06-10

Applicant: Ishikawajima Harima Heavy Ind Co Ltd ,  石川島播磨重工業株式会社

Inventor： NISHIDA KENICHIRO ,  KAWAGUCHI NORIHITO ,  ISHII MIKITO ,  MASAKI MIYUKI ,  YOSHINOUCHI ATSUSHI

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a method and an apparatus for laser annealing by which the diameter of a crystal grain can be controlled by suppressing the formation of an amorphous Si ridge by deforming the energy distribution of a laser beam.
SOLUTION: A symmetrical laser beam 2 having an energy distribution which is symmetrical with respect to the center line is converted into an asymmetrical laser beam 6 having an energy distribution which is asymmetrical with respect to the center line, and the crystal grain is grown on a substrate by melting a silicon film formed on the surface of the substrate by projecting the asymmetrical laser beam 6 upon the film.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种用于激光退火的方法和装置，通过该方法和装置可以通过使激光束的能量分布变形来抑制非晶Si脊的形成来控制晶粒的直径。 解决方案：具有相对于中心线对称的能量分布的对称激光束2被转换成具有相对于中心线不对称的能量分布的不对称激光束6，并且晶粒是 通过将不对称激光束6投影在膜上来熔化形成在基板表面上的硅膜，在基板上生长。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2003289052A

公开(公告)日：2003-10-10

申请号：JP2002092470

申请日：2002-03-28

Applicant: Ishikawajima Harima Heavy Ind Co Ltd ,  石川島播磨重工業株式会社

Inventor： KAWAGUCHI NORIHITO ,  MURAYAMA TAKAHIKO ,  ISHII MIKITO ,  NISHIDA KENICHIRO ,  MASAKI MIYUKI

IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786

Abstract: PROBLEM TO BE SOLVED: To provide a crystallizing method of semiconductor having a large crystal grain size and performing crystallization treatment in a short period of time and, to provide a laser irradiation device that is simple in constituting of an optical system for laser condensing.
SOLUTION: The crystallizing method of semiconductor comprises a step for performing laser annealing by irradiating a laser beam L3 on an amorphous semiconductor film and crystallizing the amorphous semiconductor film 22. Laser beams L1 uneven in intensity distribution are emitted from a plurality of laser emitting devices 11a-11e. The intensity distribution of each laser beam L1 is uniformized and synthesized after traveling through a homogenizer 12. The amorphous semiconductor film 22 is irradiated by condensing the uniformized and synthesized laser L3 using a condensing lens 15 and the like, and a polycrystal semiconductor film having a crystal grain size of 1 μm or larger is formed.
COPYRIGHT: (C)2004,JPO

Abstract translation: 要解决的问题：为了提供具有大晶粒尺寸并在短时间内进行结晶处理的半导体结晶方法，并且提供一种简单构成激光用光学系统的激光照射装置 冷凝 解决方案：半导体的结晶方法包括通过在非晶半导体膜上照射激光束L3并使非晶半导体膜22结晶来进行激光退火的步骤。强度分布不均匀的激光束L1从多个激光器 发光装置11a〜11e。 每个激光束L1的强度分布在通过均化器12行进之后被均匀化并合成。通过使用聚光透镜15等使均匀化合成的激光器L3聚光来照射非晶半导体膜22，并且使用具有 形成1μm以上的晶粒尺寸。 版权所有（C）2004，JPO

公开(公告)号：JP2002321081A

公开(公告)日：2002-11-05

申请号：JP2001132690

申请日：2001-04-27

Applicant: ISHIKAWAJIMA HARIMA HEAVY IND

Inventor： ISHII MIKITO ,  NISHIDA KENICHIRO ,  KAWAGUCHI NORIHITO ,  MASAKI MIYUKI ,  YOSHINOUCHI ATSUSHI

IPC: G02B27/28 ,  B23K26/06 ,  B23K26/064 ,  B23K26/073

Abstract: PROBLEM TO BE SOLVED: To provide a laser irradiation apparatus and method capable of irradiating uniformly a work even with a coherence-rich laser light source. SOLUTION: The linearly polarized laser beam 24 half of which is rotated by 90 degrees relative to the electric field direction with the λ/2 polarization plate 25 does not interfere with the other half of the laser beam. With respect to the two kinds of laser beam not interfering with each other, by making them pass through light path compensation lenses 28, 29 comprising transparent glass plates 28a-28d having a length longer than the coherent length, the coherence effect is eliminated, thereby the interference between the laser beams is canceled. The linear beam having a uniform spectral density can be obtained by making such laser beams not having interference with each other pass through a homogenizer 32 and the series of lenses.