公开(公告)号：JPS58145938A

公开(公告)日：1983-08-31

申请号：JP1901883

申请日：1983-02-09

Applicant: IBM

Inventor： NIKORASU JIEFURIISU KUREKATSUK ,  DENISU RICHIYAADO MATSUKIIN ,  ROBAATO DENISU MIRAA ,  TERII KIYADEI TONPUKINSU ,  ROBAATO JIEEMUZU TSUUIIGU ,  KAARUTON GURANTO UIRUSON

IPC: G03C1/72 ,  C08L61/00 ,  C08L61/04 ,  G03F7/022 ,  H01L21/027

公开(公告)号：JPS60145886A

公开(公告)日：1985-08-01

申请号：JP18828684

申请日：1984-09-10

Applicant: IBM

Inventor： POORU RUISU JIENDORAA ,  ROBAATO JIEEMUZU TSUUIIGU

IPC: B41M5/20 ,  G01D15/06

公开(公告)号：JPS61102742A

公开(公告)日：1986-05-21

申请号：JP15529285

申请日：1985-07-16

Applicant: Ibm

Inventor： INGU INGU CHIENGU ,  DANIERU JIYOSEFU DAUSON ,  JIEEMUZU EKONOMII ,  SARII AN SUWANSON ,  ROBAATO JIEEMUZU TSUUIIGU

IPC: H01L21/76 ,  H01L21/312 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/312

Abstract: Deep dielectric isolation trenches in semiconductor devices filled by a process using a filtered solution of a polyaromatic oligomer with reactive ethynyl groups, said solution having a viscosity of between 2 x 10 and 2 x 10 m /s.

公开(公告)号：JPS5959784A

公开(公告)日：1984-04-05

申请号：JP13111283

申请日：1983-07-20

Applicant: Ibm

Inventor： POORU RUISU JIENDORAA ,  ROBAATO JIEEMUZU TSUUIIGU

IPC: C08K5/00 ,  B41M5/20 ,  C08K5/35 ,  C08K5/357 ,  C09B21/00 ,  C09K9/00 ,  G02F1/15 ,  G02F1/17

CPC classification number: C09B21/00 ,  B41M5/20

公开(公告)号：JPS58224788A

公开(公告)日：1983-12-27

申请号：JP5171983

申请日：1983-03-29

Applicant: Ibm

Inventor： UIRIAMU IMETSUTO BAANIA ,  POORU RUISU JIENDORAA ,  ANETSUTO BURONKESHIYU JIYAFUI ,  ROBAATO JIEEMUZU TSUUIIGU

IPC: B41M1/36 ,  B41M5/124 ,  B41M5/128 ,  B41M5/20 ,  B41M5/337

CPC classification number: B41M5/3375 ,  B41M1/36 ,  B41M5/128 ,  B41M5/20