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公开(公告)号：US20230059356A1
公开(公告)日：2023-02-23
申请号：US17818988
申请日：2022-08-11
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Florian Brandl
IPC: G01M3/04
Abstract: A differential gas sensor includes a first sensor component to selectively detect a first gas present in the environment and to supply a first output signal, a second sensor component configured to supply a second output signal, and a circuit configured to determine a difference between the first output signal and the second output signal.
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公开(公告)号：US10692921B2
公开(公告)日：2020-06-23
申请号：US16566171
申请日：2019-09-10
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Emanuele Bruno Bodini , Felix Braun , Hermann Gruber , Uwe Hoeckele , Dirk Offenberg , Klemens Pruegl , Ines Uhlig
IPC: H01L27/146 , H01L27/148
Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.
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公开(公告)号：US10648999B2
公开(公告)日：2020-05-12
申请号：US15899979
申请日：2018-02-20
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold
Abstract: Various acceleration sensors are disclosed. In some cases, an inertial mass may be formed during back-end-of-line (BEOL). In other cases, a membrane may have a bent, undulated or winded shape. In yet other embodiments, an inertial mass may span two or more pressure sensing structures.
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公开(公告)号：US10411060B2
公开(公告)日：2019-09-10
申请号：US15586498
申请日：2017-05-04
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Emanuele Bruno Bodini , Felix Braun , Hermann Gruber , Uwe Hoeckele , Dirk Offenberg , Klemens Pruegl , Ines Uhlig
IPC: H01L27/146 , H01L27/148
Abstract: Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.
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公开(公告)号：US09905715B2
公开(公告)日：2018-02-27
申请号：US14093172
申请日：2013-11-29
Applicant: Infineon Technologies AG
Inventor： Thomas Bever , Henning Feick , Dirk Offenberg , Stefano Parascandola , Ines Uhlig , Thoralf Kautzsch , Dirk Meinhold , Hanno Melzner
IPC: H01L27/148 , H01L31/0352 , G01S7/491
CPC classification number: H01L31/035272 , G01S7/4914 , H01L27/14806
Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.
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Patent Agency Ranking
公开(公告)号：US20140319688A1
公开(公告)日：2014-10-30
申请号：US14326252
申请日：2014-07-08
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Norbert Mais , Reimund Engl , Hans-Joerg Timme , Alfred Vater , Stephan Henneck , Norbert Urbansky
IPC: H01L23/00 , H01L23/532
CPC classification number: H01L23/564 , H01L21/7685 , H01L21/76852 , H01L23/53219 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/04042 , H01L2224/05624 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/45565 , H01L2224/45664 , H01L2224/48463 , H01L2224/48624 , H01L2224/48824 , H01L2224/4911 , H01L2924/01015 , H01L2924/10253 , H01L2924/12042 , H01L2924/1301 , H01L2924/181 , H01L2924/00 , H01L2924/00014 , H01L2924/20752
Abstract: In one embodiment, a method of forming a semiconductor device includes forming a metal line over a substrate and depositing an alloying material layer over a top surface of the metal line. The method further includes forming a protective layer by combining the alloying material layer with the metal line.
Abstract translation: 在一个实施例中，形成半导体器件的方法包括在衬底上形成金属线，并在金属线的顶表面上沉积合金材料层。 该方法还包括通过将合金材料层与金属线组合来形成保护层。
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公开(公告)号：US20200321388A1
公开(公告)日：2020-10-08
申请号：US16909745
申请日：2020-06-23
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold , Emanuele Bruno Bodini , Felix Braun , Hermann Gruber , Uwe Hoeckele , Dirk Offenberg , Klemens Pruegl , Ines Uhlig
IPC: H01L27/146 , H01L27/148
Abstract: Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.
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公开(公告)号：US10707362B2
公开(公告)日：2020-07-07
申请号：US15881100
申请日：2018-01-26
Applicant: Infineon Technologies AG
Inventor： Thomas Bever , Henning Feick , Dirk Offenberg , Stefano Parascandola , Ines Uhlig , Thoralf Kautzsch , Dirk Meinhold , Hanno Melzner
IPC: H01L31/0352 , G01S7/4914 , H01L27/148
Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region.
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公开(公告)号：US20180151765A1
公开(公告)日：2018-05-31
申请号：US15881100
申请日：2018-01-26
Applicant: Infineon Technologies AG
Inventor： Thomas Bever , Henning Feick , Dirk Offenberg , Stefano Parascandola , lnes Uhlig , ThoraIf Kautzsch , Dirk Meinhold , Hanno Melzner
IPC: H01L31/0352 , H01L27/148 , G01S7/491
Abstract: Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region
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公开(公告)号：US09618561B2
公开(公告)日：2017-04-11
申请号：US14197564
申请日：2014-03-05
Applicant: Infineon Technologies AG
Inventor： Dirk Meinhold
CPC classification number: G01R31/2644 , B81B7/02 , B81B2201/0264 , B81C99/0035 , G01L27/007 , H01L22/30 , H01L22/34
Abstract: A micro-electro-mechanical device includes a movable structure. The movable structure includes a test structure changing an electrical characteristic, if the movable structure is damaged. Further, a method for detecting damaging of a micro-electro-mechanical device includes detecting a change of an electrical characteristic of the electrical test structure of the movable structure. Further, the method includes indicating a deviation of the electrical characteristic from a predefined tolerable range.
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