公开(公告)号：US20240006218A1

公开(公告)日：2024-01-04

申请号：US18211656

申请日：2023-06-20

Applicant: Infineon Technologies AG

Inventor： Gregor Langer ,  Bernhard Goller ,  Nilesha Mishra ,  Matteo Piccin ,  Franz-Josef Pichler

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/304

CPC classification number: H01L21/6835 ,  H01L22/14 ,  H01L21/3043 ,  H01L2221/68318 ,  H01L2221/68381

Abstract: A method of manufacturing a semiconductor device in a semiconductor body is proposed. The method includes processing a semiconductor body at a first surface of the semiconductor body. The method further includes attaching the semiconductor body to a carrier via the first surface. The carrier includes an inner part and an outer part at least partly surrounding the inner part. The method further includes processing the semiconductor body at a second surface opposite to the first surface. The method further includes detaching the inner part of the carrier from the semiconductor body.

公开(公告)号：US20230127556A1

公开(公告)日：2023-04-27

申请号：US17743006

申请日：2022-05-12

Applicant: Infineon Technologies AG

Inventor： Bernhard Goller ,  Alexander Binter ,  Tobias Hoechbauer ,  Martin Huber ,  Iris Moder ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze

IPC: H01L21/02 ,  H01L21/288 ,  H01L21/78

Abstract: A method of processing a semiconductor wafer includes: forming one or more epitaxial layers over a first main surface of the semiconductor wafer; forming one or more porous layers in the semiconductor wafer or in the one or more epitaxial layers, wherein the semiconductor wafer, the one or more epitaxial layers and the one or more porous layers collectively form a substrate; forming doped regions of a semiconductor device in the one or more epitaxial layers; and after forming the doped regions of the semiconductor device, separating a non-porous part of the semiconductor wafer from a remainder of the substrate along the one or more porous layers.

公开(公告)号：US20200013859A1

公开(公告)日：2020-01-09

申请号：US16502451

申请日：2019-07-03

Applicant: Infineon Technologies AG

Inventor： Carsten SCHAEFFER ,  Alexander Breymesser ,  Bernhand Goller ,  Ronny Kern ,  Matteo Piccin ,  Roland Rupp ,  Francisco Javier Santos Rodriguez

IPC: H01L29/16 ,  H01L21/04 ,  H01L21/784 ,  H01L21/683 ,  H01L29/66

Abstract: According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.

公开(公告)号：US11990520B2

公开(公告)日：2024-05-21

申请号：US17532030

申请日：2021-11-22

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Guenter Denifl ,  Ronny Kern ,  Michael Knabl ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez

IPC: H01L21/02 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L23/544 ,  H01L29/16

CPC classification number: H01L29/1608 ,  H01L21/02378 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/544

Abstract: A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

公开(公告)号：US12249504B2

公开(公告)日：2025-03-11

申请号：US17743006

申请日：2022-05-12

Applicant: Infineon Technologies AG

Inventor： Bernhard Goller ,  Alexander Christian Binter ,  Tobias Hoechbauer ,  Martin Huber ,  Iris Moder ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez ,  Hans-Joachim Schulze

IPC: H01L21/02 ,  H01L21/288 ,  H01L21/78

Abstract: pa The method of processing a semiconductor wafer includes forming one or more epitaxial layers over its first main surface. It also involves forming one or more porous layers within the semiconductor wafer or within the epitaxial layers. Together, the semiconductor wafer, the epitaxial layer(s), and the porous layer(s) form a substrate. Next, doped regions of a semiconductor device are formed within the epitaxial layer(s). After forming these doped regions, a non-porous part of the semiconductor wafer is separated from the rest of the substrate along the porous layer(s).

公开(公告)号：US11576259B2

公开(公告)日：2023-02-07

申请号：US16550151

申请日：2019-08-23

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Andre Brockmeier ,  Tobias Franz Wolfgang Hoechbauer ,  Gerhard Metzger-Brueckl ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez

IPC: H01L23/12 ,  H05K1/03 ,  H01L21/683 ,  H01L29/16

Abstract: A carrier configured to be attached to a semiconductor substrate via a first surface comprises a continuous carbon structure defining a first surface of the carrier, and a reinforcing material constituting at least 2 vol-% of the carrier.

公开(公告)号：US11139375B2

公开(公告)日：2021-10-05

申请号：US16502451

申请日：2019-07-03

Applicant: Infineon Technologies AG

Inventor： Carsten Schaeffer ,  Alexander Breymesser ,  Bernhard Goller ,  Ronny Kern ,  Matteo Piccin ,  Roland Rupp ,  Francisco Javier Santos Rodriguez

IPC: H01L29/16 ,  H01L21/784 ,  H01L21/683 ,  H01L21/04 ,  H01L29/66 ,  H01L23/31 ,  H01L23/00 ,  H01L29/45

Abstract: According to an embodiment of a method described herein, a silicon carbide substrate is provided that includes a plurality of device regions. A front side metallization may be provided at a front side of the silicon carbide substrate. The method may further comprise providing an auxiliary structure at a backside of the silicon carbide substrate. The auxiliary structure includes a plurality of laterally separated metal portions. Each metal portion is in contact with one device region of the plurality of device regions.

公开(公告)号：US20250022707A1

公开(公告)日：2025-01-16

申请号：US18768095

申请日：2024-07-10

Applicant: Infineon Technologies AG

Inventor： Matteo Piccin

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/78 ,  H01L29/861

Abstract: A method of manufacturing a silicon carbide device includes forming a transfer foil that includes a porous silicon carbide layer. A composite substrate is formed that includes the transfer foil and a support substrate. The transfer foil and the support substrate are brought into contact with each other and connected to each other. An epitaxial layer is formed on a side of the porous silicon carbide layer opposite to the support substrate. The composite substrate is divided into a device substrate and a reclaim substrate. The device substrate includes the epitaxial layer and the reclaim substrate includes the support substrate.

公开(公告)号：US20230092013A1

公开(公告)日：2023-03-23

申请号：US17946454

申请日：2022-09-16

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Mihai Draghici ,  Matteo Piccin ,  Marko David Swoboda

IPC: H01L21/268 ,  H01L29/06

Abstract: A method of manufacturing a semiconductor device is described. The method includes providing a parent substrate including a substrate portion of a first conductivity type. The method further includes forming an absorption layer in the parent substrate by an ion implantation process of an element through a first surface of the parent substrate. The method further includes forming a semiconductor layer structure on the first surface of the parent substrate. The method further includes splitting the parent substrate along a splitting section through a detachment layer. The detachment layer is arranged between the absorption layer and a second surface of the parent substrate at a vertical distance to the absorption layer.

公开(公告)号：US11373863B2

公开(公告)日：2022-06-28

申请号：US16869033

申请日：2020-05-07

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Mihai Draghici ,  Tobias Franz Wolfgang Hoechbauer ,  Wolfgang Lehnert ,  Matteo Piccin

IPC: H01L21/02 ,  B23K26/00 ,  H01L21/60

Abstract: A wafer composite includes a handle substrate, an auxiliary layer formed on a first main surface of the handle substrate, and a silicon carbide structure formed over the auxiliary layer. The handle substrate is subjected to laser radiation that modifies crystalline material along a focal plane in the handle substrate. The focal plane is parallel to the first main surface. The auxiliary layer is configured to stop propagation of microcracks that the laser radiation may generate in the handle substrate.