公开(公告)号：US10580753B2

公开(公告)日：2020-03-03

申请号：US15656388

申请日：2017-07-21

Applicant: Infineon Technologies AG

Inventor： Martin Mischitz ,  Harald Huber ,  Michael Knabl ,  Claudia Sgiarovello ,  Caterina Travan ,  Andrew Wood

IPC: H01L23/00 ,  H01L23/525 ,  H01L23/31 ,  H01L25/065 ,  H01L25/00

Abstract: According to an embodiment of a method of manufacturing a plurality of semiconductor devices on a wafer, the method includes forming a structure layer comprising a plurality of same semiconductor device structures and providing a protective layer on the structure layer. The protective layer on a first one of the plurality of semiconductor device structures differs from the protective layer on a second one of the plurality of semiconductor device structures.

公开(公告)号：US20190027464A1

公开(公告)日：2019-01-24

申请号：US15656388

申请日：2017-07-21

Applicant: Infineon Technologies AG

Inventor： Martin Mischitz ,  Harald Huber ,  Michael Knabl ,  Claudia Sgiarovello ,  Caterina Travan ,  Andrew Wood

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/31

Abstract: According to an embodiment of a method of manufacturing a plurality of semiconductor devices on a wafer, the method includes forming a structure layer comprising a plurality of same semiconductor device structures and providing a protective layer on the structure layer. The protective layer on a first one of the plurality of semiconductor device structures differs from the protective layer on a second one of the plurality of semiconductor device structures.

公开(公告)号：US20220085174A1

公开(公告)日：2022-03-17

申请号：US17532030

申请日：2021-11-22

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Guenter Denifl ,  Ronny Kern ,  Michael Knabl ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez

IPC: H01L29/16 ,  H01L21/02 ,  H01L23/544 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31

Abstract: A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

公开(公告)号：US11211459B2

公开(公告)日：2021-12-28

申请号：US16715439

申请日：2019-12-16

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Guenter Denifl ,  Ronny Kern ,  Michael Knabl ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez

IPC: H01L21/02 ,  H01L21/56 ,  H01L21/78 ,  H01L29/16 ,  H01L23/544 ,  H01L23/31

Abstract: An auxiliary carrier and a silicon carbide substrate are provided. The silicon carbide substrate includes an idle layer and a device layer between a main surface at a front side of the silicon carbide substrate and the idle layer. The device layer includes a plurality of laterally separated device regions. Each device region extends from the main surface to the idle layer. The auxiliary carrier is structurally connected with the silicon carbide substrate at the front side. The idle layer is removed. A mold structure is formed that fills a grid-shaped groove that laterally separates the device regions. The device regions are separated, and parts of the mold structure form frame structures laterally surrounding the device regions.

公开(公告)号：US11990520B2

公开(公告)日：2024-05-21

申请号：US17532030

申请日：2021-11-22

Applicant: Infineon Technologies AG

Inventor： Andre Brockmeier ,  Guenter Denifl ,  Ronny Kern ,  Michael Knabl ,  Matteo Piccin ,  Francisco Javier Santos Rodriguez

IPC: H01L21/02 ,  H01L21/56 ,  H01L21/78 ,  H01L23/31 ,  H01L23/544 ,  H01L29/16

CPC classification number: H01L29/1608 ,  H01L21/02378 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/544

Abstract: A method of manufacturing a semiconductor device includes: providing a silicon carbide substrate that includes device regions and a grid-shaped kerf region laterally separating the device regions; forming a mold structure on a backside surface of the grid-shaped kerf region; forming backside metal structures on a backside surface of the device regions; and separating the device regions, wherein parts of the mold structure form frame structures laterally surrounding the backside metal structures.

公开(公告)号：US11515264B2

公开(公告)日：2022-11-29

申请号：US16421707

申请日：2019-05-24

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Alexander Breymesser ,  Erich Griebl ,  Michael Knabl ,  Matthias Kuenle ,  Andreas Moser ,  Roland Rupp ,  Hans-Joachim Schulze ,  Sokratis Sgouridis ,  Stephan Voss

IPC: H01L23/00 ,  H01L23/16

Abstract: A method for processing a semiconductor wafer is proposed. The method may include reducing a thickness of the semiconductor wafer. A carrier structure is placed on a first side of the semiconductor wafer, e.g. before or after reducing the thickness of the semiconductor wafer. The method further includes providing a support structure on a second side of the semiconductor wafer opposite to the first side, e.g. after reducing the thickness of the semiconductor wafer. Methods for welding a support structure onto a semiconductor wafer are proposed. Further, semiconductor composite structures with support structures welded onto a semiconductor wafer are proposed.

公开(公告)号：US20220359428A1

公开(公告)日：2022-11-10

申请号：US17869114

申请日：2022-07-20

Applicant: Infineon Technologies AG

Inventor： Francisco Javier Santos Rodriguez ,  Alexander Breymesser ,  Erich Griebl ,  Michael Knabl ,  Matthias Kuenle ,  Andreas Moser ,  Roland Rupp ,  Hans-Joachim Schulze ,  Sokratis Sgouridis ,  Stephan Voss

IPC: H01L23/00 ,  H01L23/16

Abstract: A method for processing a semiconductor wafer is proposed. The method may include: reducing a thickness of the semiconductor wafer; before or after reducing the thickness of the semiconductor wafer, placing a carrier structure at a first side of the semiconductor wafer; and after reducing the thickness of the semiconductor wafer, providing a support structure at a second side of the semiconductor wafer opposite to the first side. Methods for welding a support structure onto a semiconductor wafer are proposed. Further, semiconductor composite structures with support structures welded onto a semiconductor wafer are proposed.