公开(公告)号：US20200343094A1

公开(公告)日：2020-10-29

申请号：US16926162

申请日：2020-07-10

Applicant: Infineon Technologies AG

Inventor： Paul Frank ,  Gretchen Adema ,  Thomas Bertaud ,  Michael Ehmann ,  Eric Graetz ,  Kamil Karlovsky ,  Evelyn Napetschnig ,  Werner Robl ,  Tobias Schmidt ,  Joachim Seifert ,  Frank Wagner ,  Stefan Woehlert

IPC: H01L21/285 ,  H01L23/00 ,  H01L29/861

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

公开(公告)号：US10573611B2

公开(公告)日：2020-02-25

申请号：US16163006

申请日：2018-10-17

Applicant: Infineon Technologies AG

Inventor： Kamil Karlovsky ,  Evelyn Napetschnig ,  Michael Ehmann ,  Mark James Harrison ,  Anton Pugatschow

IPC: H01L23/00 ,  H01L21/683

Abstract: A semiconductor device includes a contact metal layer disposed over a semiconductor surface of a substrate, a diffusion barrier layer disposed over the contact metal layer, an inert layer disposed over the diffusion barrier layer, and a solder layer disposed over inert layer.

公开(公告)号：US20190051624A1

公开(公告)日：2019-02-14

申请号：US16163006

申请日：2018-10-17

Applicant: Infineon Technologies AG

Inventor： Kamil Karlovsky ,  Evelyn Napetschnig ,  Michael Ehmann ,  Mark James Harrison ,  Anton Pugatschow

IPC: H01L23/00

Abstract: A semiconductor device includes a contact metal layer disposed over a semiconductor surface of a substrate, a diffusion barrier layer disposed over the contact metal layer, an inert layer disposed over the diffusion barrier layer, and a solder layer disposed over inert layer.

公开(公告)号：US11615963B2

公开(公告)日：2023-03-28

申请号：US16926162

申请日：2020-07-10

Applicant: Infineon Technologies AG

Inventor： Paul Frank ,  Gretchen Adema ,  Thomas Bertaud ,  Michael Ehmann ,  Eric Graetz ,  Kamil Karlovsky ,  Evelyn Napetschnig ,  Werner Robl ,  Tobias Schmidt ,  Joachim Seifert ,  Frank Wagner ,  Stefan Woehlert

IPC: H01L23/00 ,  H01L21/285 ,  H01L29/861

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

公开(公告)号：US20180082848A1

公开(公告)日：2018-03-22

申请号：US15692495

申请日：2017-08-31

Applicant: Infineon Technologies AG

Inventor： Paul Frank ,  Gretchen Adema ,  Thomas Bertaud ,  Michael Ehmann ,  Eric Graetz ,  Kamil Karlovsky ,  Evelyn Napetschnig ,  Werner Robl ,  Tobias Schmidt ,  Joachim Seifert ,  Frank Wagner ,  Stefan Woehlert

IPC: H01L21/285 ,  H01L23/00 ,  H01L29/861

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

公开(公告)号：US10741402B2

公开(公告)日：2020-08-11

申请号：US15692495

申请日：2017-08-31

Applicant: Infineon Technologies AG

Inventor： Paul Frank ,  Gretchen Adema ,  Thomas Bertaud ,  Michael Ehmann ,  Eric Graetz ,  Kamil Karlovsky ,  Evelyn Napetschnig ,  Werner Robl ,  Tobias Schmidt ,  Joachim Seifert ,  Frank Wagner ,  Stefan Woehlert

IPC: H01L23/00 ,  H01L21/285 ,  H01L29/861

Abstract: An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

公开(公告)号：US10115688B2

公开(公告)日：2018-10-30

申请号：US14726078

申请日：2015-05-29

Applicant: Infineon Technologies AG

Inventor： Kamil Karlovsky ,  Evelyn Napetschnig ,  Michael Ehmann ,  Mark Harrison ,  Anton Pugatschow

IPC: H01L21/44 ,  H01L23/00

Abstract: A semiconductor device includes a contact metal layer disposed over a semiconductor surface of a substrate, a diffusion barrier layer disposed over the contact metal layer, an inert layer disposed over the diffusion barrier layer, and a solder layer disposed over inert layer.

公开(公告)号：US20160351516A1

公开(公告)日：2016-12-01

申请号：US14726078

申请日：2015-05-29

Applicant: Infineon Technologies AG

Inventor： Kamil Karlovsky ,  Evelyn Napetschnig ,  Michael Ehmann ,  Mark Harrison ,  Anton Pugatschow

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/83 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05599 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953

Abstract: A semiconductor device includes a contact metal layer disposed over a semiconductor surface of a substrate, a diffusion barrier layer disposed over the contact metal layer, an inert layer disposed over the diffusion barrier layer, and a solder layer disposed over inert layer.

Abstract translation: 半导体器件包括设置在衬底的半导体表面上的接触金属层，设置在接触金属层上的扩散阻挡层，设置在扩散阻挡层上的惰性层和设置在惰性层上的焊料层。