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    Electronic device with multi-layer contact and system
    1.
    发明授权
    Electronic device with multi-layer contact and system 有权

    公开(公告)号：US12255168B2

    公开(公告)日：2025-03-18

    申请号：US18509357

    申请日：2023-11-15

    Applicant: Infineon Technologies AG

    Inventor： Alexander Heinrich ,  Michael Juerss ,  Konrad Roesl ,  Oliver Eichinger ,  Kok Chai Goh ,  Tobias Schmidt

    IPC: H01L29/43 ,  H01L23/00 ,  H01L23/482 ,  H01L23/495 ,  H01L29/45

    Abstract: An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

    Method for processing a semiconductor workpiece with metallization
    4.
    发明授权
    Method for processing a semiconductor workpiece with metallization 有权
    用金属化处理半导体工件的方法

    公开(公告)号：US09093385B2

    公开(公告)日：2015-07-28

    申请号：US13903013

    申请日：2013-05-28

    Applicant: Infineon Technologies AG

    Inventor： Anja Gissibl ,  Hermann Wendt ,  Thomas Fischer ,  Bernhard Weidgans ,  Gudrun Stranzl ,  Tobias Schmidt ,  Dietrich Bonart

    IPC: H01L21/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/78

    CPC classification number: H01L21/78 ,  H01L21/28568 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/32133 ,  H01L21/32134 ,  H01L21/76841 ,  H01L21/76892

    Abstract: A method for processing a semiconductor workpiece is provided, which may include: providing a semiconductor workpiece including a metallization layer stack disposed at a side of the semiconductor workpiece, the metallization layer stack including at least a first layer and a second layer disposed over the first layer, wherein the first layer contains a first material and the second layer contains a second material that is different from the first material; patterning the metallization layer stack, wherein patterning the metallization layer stack includes wet etching the first layer and the second layer by means of an etching solution that has at least substantially the same etching rate for the first material and the second material.

    Abstract translation: 提供了一种用于处理半导体工件的方法，其可以包括：提供包括设置在半导体工件侧面的金属化层堆叠的半导体工件，金属化层堆叠包括至少第一层和设置在第一层上的第二层 层，其中所述第一层包含第一材料，并且所述第二层包含不同于所述第一材料的第二材料; 图案化金属化层堆叠，其中图案化金属化层堆叠包括通过蚀刻溶液湿法蚀刻第一层和第二层，蚀刻溶液对于第一材料和第二材料具有至少基本上相同的蚀刻速率。

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