公开(公告)号：US20210020386A1

公开(公告)日：2021-01-21

申请号：US16931498

申请日：2020-07-17

Applicant: Innovative Micro Technology

Inventor： Christopher GUDEMAN

IPC: H01H1/00 ,  H01H11/04

Abstract: Systems and methods for forming a magnetostatic MEMS switch include a movable structure formed in a top surface of a substrate, wherein the movable structure is coupled to the substrate by a plurality of restoring springs anchored to the substrate, a stationary structure formed in the same top surface of the substrate, a conductive shunt bar having a characteristic dimension of about 100 um, wherein the shunt bar is disposed on the movable structure adjacent to the gap, an input electrode and an output electrode disposed on the stationary structure and separated by a distance of about 100 um; and a plurality of permeable magnetic features inlaid into the stationary and movable structures, wherein the movable structure is configured to move relative to the stationary structure by interaction of the permeable features with an applied magnetic field, thereby closing the gap and electrically coupling the input and output electrodes across the conductive shunt bar.