公开(公告)号：US20190088598A1

公开(公告)日：2019-03-21

申请号：US15710969

申请日：2017-09-21

Applicant: Innovative Micro Technology

Inventor： Christopher S. GUDEMAN ,  Jamie Yao

IPC: H01L23/535 ,  H01L21/768

Abstract: A device and method for forming through silicon vias (TSVs) in a composite substrate is disclosed. The through substrate via may include an embedded insulating etch stop layer sandwiched between a first and a second substrate layers. The via may include at least one hole formed in the first substrate layer down to the embedded insulating etch stop layer, an insulator formed onto the walls of the at least one hole, a conductive material disposed in the at least one hole, a trench etched into the second substrate layer on the obverse side of the composite substrate through the second substrate material and through the embedded insulating etch stop layer, directly opposite the at least one hole, and a first metal pad formed over the at least one hole and at the bottom of the trench.