公开(公告)号：WO2015081130A1

公开(公告)日：2015-06-04

申请号：PCT/US2014/067477

申请日：2014-11-25

Applicant: INPHENIX, INC.

Inventor： KAMAL, Mohammad ,  LI, Tongning ,  EU, David ,  QI, Qinian

IPC: G02B5/28 ,  B81B3/00

CPC classification number: G02B26/001 ,  B81C1/00317 ,  B81C2201/013 ,  G02B1/11 ,  G02B1/12 ,  H01L33/46 ,  H01L39/2467 ,  H01L2924/1461 ,  H01S3/08027 ,  H01S3/083 ,  H01S3/105 ,  H01S3/1062 ,  H01S5/141 ,  H01S5/18366

Abstract: A wavelength tunable gain medium with micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm.

Abstract translation: 提供基于微机电系统（MEMS）的法布里 - 珀罗（FP）滤波器空腔调谐的波长可调增益介质作为可调激光器。 该系统包括用于波长选择的激光腔和滤光腔。 激光腔由诸如半导体光放大器（SOA），两个准直透镜和端反射器的增益介质组成。 MEMS-FP滤光器腔包括固定反射器和可由静电力控制的可移动反射器。 通过移动MEMS反射器，可以通过改变FP滤光器腔长度来调节波长。 MEMS FP滤波器腔位移可以用阶跃电压离散地调节，或者通过使用连续的驱动电压连续地调节。 连续调谐的驱动频率可以是谐振频率或MEMS结构的任何其他频率，调谐范围可以覆盖30nm，40nm和大于100nm的不同调谐范围。

公开(公告)号：WO2015003023A1

公开(公告)日：2015-01-08

申请号：PCT/US2014/045170

申请日：2014-07-01

Applicant: INPHENIX, INC.

Inventor： MAKINO, Toshihiko ,  LI, Tongning ,  EU, David

IPC: H01S5/183

CPC classification number: H01S5/18366 ,  G01B9/02004 ,  G01N21/4795 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/3412 ,  H01S5/34313

Abstract: A wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) with the use of micro-electromechanical system (MEMS) technology is provided as a swept source for Optical Coherence Tomography (OCT). The wavelength-tunable VCSEL comprises a bottom mirror of the VCSEL, an active region, and a MEMS tunable upper mirror movable by electrostatic deflections. The bottom mirror comprising a GaAs based distributed Bragg reflector (DBR) stack, and the active region comprising multiple stacks of GaAs based quantum dot (QD) layers, are epitaxially grown on a GaAs substrate. The MEMS tunable upper mirror includes a membrane part supported by suspension beams, and an upper mirror comprising a dielectric DBR stack. The MEMS tunable quantum dots VCSEL can cover an operating wavelength range of more than 100 nm, preferably with a center wavelength between 250 and 1950 nm, and the sweeping rate can be from a few kHz to hundreds of kHz, and up to a few MHz.

Abstract translation: 提供了使用微机电系统（MEMS）技术的波长可调谐垂直腔表面发射激光器（VCSEL）作为光学相干断层扫描（OCT）的扫描源。 波长可调谐VCSEL包括VCSEL的底部反射镜，有源区域和可由静电偏转移动的MEMS可调谐上镜。 包括GaAs基分布式布拉格反射器（DBR）堆叠的底部反射镜和包含多个基于GaAs的量子点（QD）层的有源区在GaAs衬底上外延生长。 MEMS可调上反射镜包括由悬挂梁支撑的膜部分和包括电介质DBR堆叠的上反射镜。 MEMS可调量子点VCSEL可以覆盖超过100nm的工作波长范围，优选地具有在250和1950nm之间的中心波长，并且扫描速率可以是从几kHz到几百kHz，并且高达几MHz 。

公开(公告)号：EP3074800A1

公开(公告)日：2016-10-05

申请号：EP14866509.4

申请日：2014-11-25

Applicant: Inphenix, Inc.

Inventor： KAMAL, Mohammad ,  LI, Tongning ,  EU, David ,  QI, Qinian

IPC: G02B5/28 ,  B81B3/00

CPC classification number: G02B26/001 ,  B81C1/00317 ,  B81C2201/013 ,  G02B1/11 ,  G02B1/12 ,  H01L33/46 ,  H01L39/2467 ,  H01L2924/1461 ,  H01S3/08027 ,  H01S3/083 ,  H01S3/105 ,  H01S3/1062 ,  H01S5/141 ,  H01S5/18366

Abstract: A wavelength tunable gain medium with the use of micro-electromechanical system (MEMS) based Fabry-Perot (FP) filter cavity tuning is provided as a tunable laser. The system comprises a laser cavity and a filter cavity for wavelength selection. The laser cavity consists of a gain medium such as a Semiconductor Optical Amplifier (SOA), two collimating lenses and an end reflector. The MEMS-FP filter cavity comprises a fixed reflector and a moveable reflector, controllable by electrostatic force. By moving the MEMS reflector, the wavelength can be tuned by changing the FP filter cavity length. The MEMS FP filter cavity displacement can be tuned discretely with a step voltage, or continuously by using a continuous driving voltage. The driving frequency for continuous tuning can be a resonance frequency or any other frequency of the MEMS structure, and the tuning range can cover different tuning ranges such as 30 nm, 40 nm, and more than 100 nm.

Abstract translation: 提供了使用基于微机电系统（MEMS）的法布里 - 珀罗（FP）滤波器空腔调谐的波长可调增益介质作为可调激光器。 该系统包括用于波长选择的激光腔和滤光腔。 激光腔由增益介质组成，例如半导体光放大器（SOA），两个准直透镜和端反射器。 MEMS-FP滤光器腔包括固定反射器和可由静电力控制的可移动反射器。 通过移动MEMS反射器，可以通过改变FP滤光器腔长度来调节波长。 MEMS FP滤波器腔位移可以通过阶梯电压离散地调节，或者通过使用连续的驱动电压连续地进行调节。 连续调谐的驱动频率可以是谐振频率或MEMS结构的任何其他频率，并且调谐范围可以覆盖不同的调谐范围，例如30nm，40nm和大于100nm。

公开(公告)号：EP3017515A1

公开(公告)日：2016-05-11

申请号：EP14819362.6

申请日：2014-07-01

Applicant: Inphenix, Inc.

Inventor： MAKINO, Toshihiko ,  LI, Tongning ,  EU, David

IPC: H01S5/183

CPC classification number: H01S5/18366 ,  G01B9/02004 ,  G01N21/4795 ,  H01S5/18311 ,  H01S5/18369 ,  H01S5/3412 ,  H01S5/34313

Abstract: A wavelength-tunable vertical-cavity surface-emitting laser (VCSEL) with the use of microelectromechanical system (MEMS) technology is provided as a swept source for Optical Coherence Tomography (OCT). The wavelength-tunable VCSEL comprises a bottom mirror of the VCSEL, an active region, and a MEMS tunable upper mirror movable by electrostatic deflections. The bottom mirror comprising a GaAs based distributed Bragg reflector (DBR) stack, and the active region comprising multiple stacks of GaAs based quantum dot (QD) layers, are epitaxially grown on a GaAs substrate. The MEMS tunable upper mirror includes a membrane part supported by suspension beams, and an upper mirror comprising a dielectric DBR stack. The MEMS tunable quantum dots VCSEL can cover an operating wavelength range of more than 100 nm, preferably with a center wavelength between 250 and 1950 nm, and the sweeping rate can be from a few kHz to hundreds of kHz, and up to a few MHz.